With the power architecture transition from a 12 V to a 48 V bus power distribution in modern data centers, there is an increased demand to improve 48 V power conversion efficiency and power density. In this context, DC-DC converters designed using eGaN^® FETs and ICs provide a high efficiency and high power density solution. Additionally, with the advent of 48 V power systems in mild-hybrid, hybrid and plug-in hybrid electric vehicles, GaN transistors can provide a reduction in size, weight, and Bill of Materials (BOM) cost.

Power Systems Design
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在48 V匯流排架構出現後，我們可採用全新、基於氮化鎵（GaN）電晶體的混合式轉換器，以實現超過95%峰值效率及225 W/in³ 功率密度。對於節能的數據中心來說，輕負載效率非常重要。基於氮化鎵電晶體的轉換器在轉換至20%負載時，可保持高於90%的效率。

PowerPulse
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工研院舉辦無線電能傳輸研討會，邀請了來自AirFuel 無線充電聯盟、宜普電源轉換公司（EPC）、jjPLUS和IHS Markit的業界領袖進行專家演講。

2018年10月30日 - 人們對5G、筆記型電腦、機器人、機械工具和醫療設備等新應用的中高功率無線充電（WPT）需求不斷增加，無線電力的下一個殺手級應用將會是什麼?

為了解答這個問題並旨在推動基於高效無線充電標準的產業發展，臺灣工業技術研究院（ITRI）的區域與兩岸工作小組、AirFuel無線充電聯盟、宜普電源轉換公司（EPC）和jjPLUS公司攜手支持首屆“無線電能傳輸（WPT）結合5G新應用研討會”。活動於2018年10月30日（星期二）在臺北的國立臺灣大學博理館演講廳舉行。

在此播客，我們跟宜普電源轉換公司（EPC）的Alex Lidow談論關於應用於聯網汽車的氮化鎵（GaN）技術。

Power Systems Design

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專為高效電源轉換而設的氮化鎵功率電晶體已經投產7年多了。全新的市場例如雷射雷達、波峰追蹤及無線電源，都成為氮化鎵的新興市場，因為氮化鎵具備超高速的的開關速度。這些市場使得氮化鎵產品得以量產、成本更低及具備優越的可靠性。這些優勢為比較保守的設計工程師提供更大的利好條件，因此，DC/DC轉換器工程師、AC/DC轉換器及車載應用工程師都開始對氮化鎵器件進行評估。要把120億美元的矽基MOSFET市場轉為氮化鎵市場，還有什麼壁壘呢？就是信心的問題。設計工程師、製造工程師、採購經理及管理層都必需對氮化鎵技術的優勢有足夠的信心、相信氮化鎵技術可以解決設計師對採用全新技術的風險的疑問。讓我們看看3個主要構成風險的因素：供應鏈、成本及產品的可靠性。

IEEE Spectrum
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當全自動車輛及電力推進系統成為車載應用發展的推動力，在矽基板上生成氮化鎵的功率元件的龐大新興市場正逐漸崛起。

Design World
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從2010年開始，自矽基氮化鎵（GaN）電晶體商用化後，低壓氮化鎵電晶體推動了很多全新應用的發展。氮化鎵元件具備超快速開關，推動全新市場諸如雷射雷達、波峰追蹤及無線電源市場的出現。這些全新應用進一步實現更強大的供應鏈、低製造成本及元件前所未有的高可靠性。這些優勢使得比較保守的設計工程師在DC/DC轉換器、AC/DC轉換器及車載等各種應用開始對氮化鎵元件進行評估。在本文章系列，我們將討論多種發揮氮化鎵元件優勢的應用，實現最終產品差異化的競爭優勢。首先，我們會探討是甚麼因素加快了氮化鎵元件的普及。

Power Systems Design
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Based on the authors' years of extensive experience, this is an authoritative overview of Wide Bandgap (WBG) device characterization.

EL SEGUNDO, Calif. – September 2018 – Efficient Power Conversion Corporation (www.epc-co.com) announces the publication by the Institution of Engineering and Technology of Characterization of Wide Bandgap Power Semiconductor Devices co-authored by EPC Senior Applications Engineer, Dr. Edward A. Jones. This textbook provides essential tools to assist researchers, advanced students, and practicing engineers in performing both static and dynamic characterization of WBG devices, particularly those based on using silicon carbide (SiC) and gallium nitride (GaN) power semiconductors. The book presents practical considerations for real applications and includes examples of applying the described methodology.

宜普电源转换公司（EPC）的两个车规级氮化镓晶体管（EPC2202及EPC2203）成功通过了国际汽车电子协会所制定的AEC Q101分立器件应力测试认证，推动一系列面向车用及其它严峻环境的应用的发展。

宜普電源轉換公司（EPC）的第一批通過國際汽車電子協會所制定的AEC Q101分立器件應力測試認證的氮化鎵場效應電晶體（EPC2202及EPC2203），榮獲《今日電子》雜誌與21IC中國電子網頒發2018年度“Top-10電源產品獎—技術突破獎”。該獎項在2018年9月13日於北京舉行的21iC電源技術研討會上頒發。

專為功率系統設計師而設的EPC2051功率電晶體是一種100 V、25 mΩ並採用超小型晶片級封裝的電晶體，可實現37 A脈衝輸出電流。EPC2051是多種應用的理想元件，包括48 V功率轉換器、雷射雷達及LED照明等應用。

宜普電源轉換公司（EPC）宣佈推出100 V的EPC2051氮化鎵場效應電晶體，其佔板面積只是1.1平方毫米、最大導通阻抗(R_DS(on))為25 mΩ及脈衝輸出電流高達37 A 以支援高效功率轉換。

Spirit公司的Marti McCurdy及EPC公司首席執行長Alex Lidow分享氮化鎵元件如何在性能及成本方面比矽元件優越，以及分享全球領導廠商如何與EPC公司合作，利用氮化鎵元件的優勢，開發出他們新一代的技術。

觀看影片

eGaN FET（及目前的積體電路）之可以應用於全自動車輛的雷射雷達系統，以及全自動電動賽車，是因為這些元件可以實現高很多的解析度（由於具備超短雷射脈衝）、更快速的圖像速度（由於短雷射脈衝），及可以準確地看得更遠（由於在超高電流時可以實現快速雷射脈衝）。

Planet Analog
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矽基增強型氮化鎵場效應電晶體及積體電路的領先供應商宜普電源轉換公司（EPC）於中國上海與功率管理工程師會面並討論關於1）針對大於30 W功率高度諧振無線功率接收器、內建同步整流FET的E類整流器； 及2）採用eGaN^® FET、120 A、少於10納秒脈衝及佔板面積小於3平方釐米的千瓦級雷射驅動器。

我們誠摯邀請工程師蒞臨中國上海，出席我們於2018年6月26日（星期二）上午10時至10時50分、在1099號國展路上海世博展覽館1層2號展館內舉行的PCIM Asia 2018研討會的演講。

For LiDAR systems to meet ever-higher performance specs, they must perform fast switching of high-current pulses, which is where a gallium-nitride power switch can step in to help.

Electronic Design
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LIDAR is presently a subject of great interest, primarily due to its widespread adoption in autonomous navigation systems for vehicles, robots, drones, and other mobile machines. eGaN devices are one of the main factors in making affordable, high performance LIDAR possible in a small form factor thus further fueling the LIDAR revolution.

EDN
By John Glaser
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In recent years, GaN-based power conversion has increased in popularity due to the inherent benefits of eGaN FETs over conventional Si transistors. Migrating a converter design from Si to GaN offers many system-level improvements, which require consideration of all the components in that system. This trend has subsequently spurred a growth in the ecosystem of power electronics that support GaN-based designs.

Power Systems Designs
By Edward A. Jones, Michael de Rooij, and David Reusch
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As GaN-on-Si becomes more common in DC-DC converter designs, questions often arise from experienced designers about the impact of the unique characteristics of GaN transistors when used as synchronous rectifiers (SRs). In particular, the third quadrant off-state characteristics, better known as “body diode” conduction in Si MOSFETs, which is activated during converter dead-time, is of interest. For this article, the focus will be on the similarities and differences of Si MOSFETs and eGaN^® FETs when operated as a “body diode” and outline their relative advantages and disadvantages.

Bodo’s Power Systems
By David Reusch & John Glaser
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AirFuel聯盟公司會員jjPLUS與EPC公司攜手為工程師演示如何依據最先進的AirFuel™共振標準，設計大面積無線供電桌面，從而實現無線供電家居及辦公室！

先進無線通訊及嵌入式無線電源解決方案的設計生產商捷佳科技股份有限公司(jjPlus)將於臺北國際電腦展的InnoVEX 2018新創特展，展示新一代磁共振無線電源傳輸（WPT）技術。作為jjPLUS公司的技術合作夥伴EPC公司在6月6日至8日攜手參展，於TWTC的3號館、展覽攤位G0309a與工程師會面。jjPLUS與EPC公司皆是AirFuel聯盟的工作委員會會員，也同時於2018年3月在深圳首次舉行的AirFuel無線充電大會暨開發者論壇演講。

Superior characteristics of eGaN^® FETs and integrated circuits, such as low output capacitance, low input capacitance, low parasitic inductances, and small size make them ideal for increasing efficiency in highly resonant, AirFuel™ wireless power transfer systems.

EL SEGUNDO, Calif.— May 2018 — Efficient Power Conversion Corporation (EPC) today announces the availability of a complete class 4 wireless power kit, the EPC9129. The system can transmit up to 33 W while operating at 6.78 MHz (the lowest ISM band). The kit comes complete with two receivers, each with a regulated output − one capable of 5 W capable and a second capable of delivering 27 W at 19 V.

Spirit Electronics now provides distribution support to assist customers in adopting eGaN^® FETs and ICs for leading-edge power conversion systems in the defense and aerospace market.

EL SEGUNDO, Calif.— May 2018 — To support its accelerating growth in the defense and aerospace markets, Efficient Power Conversion Corporation (EPC) is proud to announce the appointment of Spirit Electronics as a distribution partner focusing on these key market segments.  Spirit Electronics, in operation since 1979 and located in Phoenix, Arizona and Irvine, California, supplies products and services to the Department of Defense, aerospace, and telecommunication industries.