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jjPLUS與宜普電源轉換公司(EPC)於臺北國際電腦展的InnoVEX新創特展 演示大面積並同時對多個設備進行無線供電的解決方案

jjPLUS與宜普電源轉換公司(EPC)於臺北國際電腦展的InnoVEX新創特展 演示大面積並同時對多個設備進行無線供電的解決方案

AirFuel聯盟公司會員jjPLUS與EPC公司攜手為工程師演示如何依據最先進的AirFuel™共振標準,設計大面積無線供電桌面,從而實現無線供電家居及辦公室!

先進無線通訊及嵌入式無線電源解決方案的設計生產商捷佳科技股份有限公司(jjPlus)將於臺北國際電腦展的InnoVEX 2018新創特展,展示新一代磁共振無線電源傳輸(WPT)技術。作為jjPLUS公司的技術合作夥伴EPC公司在6月6日至8日攜手參展,於TWTC的3號館、展覽攤位G0309a與工程師會面。jjPLUS與EPC公司皆是AirFuel聯盟的工作委員會會員,也同時於2018年3月在深圳首次舉行的AirFuel無線充電大會暨開發者論壇演講。

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Simultaneously Power (or Charge) Cell Phones to Laptops Wirelessly with EPC’s Complete Class 4 Transmitter Paired with A Regulated Category 5 AirFuel Alliance Compatible Wireless Power Demo Kit

Simultaneously Power (or Charge) Cell Phones to Laptops Wirelessly with EPC’s Complete Class 4 Transmitter Paired with A Regulated Category 5 AirFuel Alliance Compatible Wireless Power Demo Kit

Superior characteristics of eGaN® FETs and integrated circuits, such as low output capacitance, low input capacitance, low parasitic inductances, and small size make them ideal for increasing efficiency in highly resonant, AirFuel™ wireless power transfer systems.

EL SEGUNDO, Calif.— May 2018 — Efficient Power Conversion Corporation (EPC) today announces the availability of a complete class 4 wireless power kit, the EPC9129. The system can transmit up to 33 W while operating at 6.78 MHz (the lowest ISM band). The kit comes complete with two receivers, each with a regulated output − one capable of 5 W capable and a second capable of delivering 27 W at 19 V.

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Efficient Power Conversion (EPC) Announces Spirit Electronics as Distribution Partner for Defense and Aerospace Market

Efficient Power Conversion (EPC) Announces Spirit Electronics as Distribution Partner for Defense and Aerospace Market

Spirit Electronics now provides distribution support to assist customers in adopting eGaN® FETs and ICs for leading-edge power conversion systems in the defense and aerospace market.

EL SEGUNDO, Calif.— May 2018 — To support its accelerating growth in the defense and aerospace markets, Efficient Power Conversion Corporation (EPC) is proud to announce the appointment of Spirit Electronics as a distribution partner focusing on these key market segments.  Spirit Electronics, in operation since 1979 and located in Phoenix, Arizona and Irvine, California, supplies products and services to the Department of Defense, aerospace, and telecommunication industries.  

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EPC to Showcase High Power Density DC-DC Conversion for Computers and Cars, as well as Multiple High Frequency Applications Using eGaN FETs and Integrated Circuits at PCIM Europe 2018

EPC to Showcase High Power Density DC-DC Conversion for Computers and Cars, as well as Multiple High Frequency Applications Using eGaN FETs and Integrated Circuits at PCIM Europe 2018

Efficient Power Conversion (EPC) will exhibit live demonstrations at PCIM Europe 2018 showing how GaN technology’s superior performance is transforming power delivery for entire industries including computing, communications, and automotive.

EL SEGUNDO, Calif. — May 2018 — The EPC team will be delivering five technical presentations on gallium nitride (GaN) technology and applications at PCIM Europe 2018 in Nuremberg, Germany from June 5th through the 7th. In addition, in Hall 7, Stand 539, the company will exhibit its latest eGaN® FETs and ICs in customers’ end products that are enabled by eGaN technology.

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Evaluation of measurement techniques for high speed GaN transistors

Evaluation of measurement techniques for high speed GaN transistors

The increase in switching speed offered by GaN transistors requires good measurement technology, as well as good techniques to capture important details of high-speed waveforms. This article focuses on how to leverage the measurement equipment for the user’s requirement and measurement techniques to accurately evaluate high performance GaN transistors. The article also evaluates high bandwidth differential probes for use with non-ground-referenced waveforms.

EDN Network
By Suvankar Biswas , David Reusch & Michael de Rooij
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宜普電源轉換公司(EPC)於2018年WiPDA寬能隙功率半導體元件及應用論壇與工程師作技術交流

宜普電源轉換公司(EPC)於2018年WiPDA寬能隙功率半導體元件及應用論壇與工程師作技術交流

EPC公司的“2018年中國路演”繼續展開行程,於5月17至19日在西安舉行的首次亞太區WiPDA研討會中與工程師分享最新的氮化鎵技術發展。

宜普電源轉換公司“2018年中國路演”於3月14日在深圳舉行的首屆AirFuel無線充電大會暨開發者論壇出發,繼而由其首席執行官兼共同創辦人Alex Lidow於3月15日在上海由中國SEMI舉辦的功率及功率暨化合物半導體論壇作開幕專題演講。路演的下一站是於5月17-19日在西安舉行的首次亞太區WiPDA論壇,與工程師作技術交流並展示其最新的eGaN®元件。之後,我們將於6月26–28日在上海舉行的亞太區PCIM會議演講,與工程師分享採用氮化鎵元件的無線電源傳送應用和面向全自動汽車的雷射雷達系統。

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基於氮化鎵(eGaN)技術的汽車應用即將到來

基於氮化鎵(eGaN)技術的汽車應用即將到來

宜普電源轉換公司(EPC)的兩個車用氮化鎵電晶體成功通過了國際汽車電子協會所制定的AEC Q101離散元件可靠度驗證測試

宜普電源轉換公司宣佈其兩個車用氮化鎵(eGaN®)元件成功通過AEC Q101測試認證,可在車用及其他嚴峻環境實現多種全新應用。EPC2202EPC2203是採用晶圓級晶片尺寸封裝、80 VDS 的離散電晶體。面向嚴峻的車用環境的多個離散電晶體及積體電路也將在不久的未來推出。

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EPC Introduces 350 V eGaN Power Transistor − 20 Times Smaller Than Comparable Silicon

EPC Introduces 350 V eGaN Power Transistor − 20 Times Smaller Than Comparable Silicon

The EPC2050 offers power systems designers a 350 V, 65 mΩ, 26 A power transistor in an extremely small chip-scale package.  These new devices are ideal for applications such as multi-level converters, EV charging, solar power inverters, and motor drives.

EL SEGUNDO, Calif. — April 2018 — Efficient Power Conversion announces the EPC2050, a 350 V GaN transistor with a maximum RDS(on) of 65 mΩ and a 26 A pulsed output current. Applications include EV charging, solar power inverters, motor drives, and multi-level converter configurations, such as a 3-level, 400 V input to 48 V output LLC converter for telecom or server power supplies.

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EPC at APEC 2018 by EE Online

EPC at APEC 2018 by EE Online

EPC CEO & Co-Founder, Alex Lidow gives Lee Teschler from EE World Online a tour of the EPC booth at APEC 2018 where EPC demonstrations included a high-power density 48 V – 12 V non-isolated converter capable of delivering over 700 W. In addition, a range of 3-D real-time LiDAR imaging sensors used in autonomous vehicles were displayed. Also, a single desktop implementing a high power resonant wireless charging solution capable of generating 300 W to wirelessly power a wide range of devices including cell phones, notebook computers, monitors, wireless speakers, smart watches, and table lamps.

View videos below.

How eGaN Transistor Technology Improves LiDAR Performance
Why Gate Drivers are Joining eGaN Transistors on the Same Chip
Graphics-Intensive Applications Benefit From Power-Dense eGaN® DC-DC Converters
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Alex Lidow walks Alix Paultre through the EPC booth at APEC 2018

Alex Lidow walks Alix Paultre through the EPC booth at APEC 2018

In this video Alex Lidow, Founder and CEO of EPC, talks to Alix Paultre, Editor-in-Chief of Power Electronics News, about the various demonstrations of GaN-based solutions at the EPC booth at APEC 2018 in San Antonio, Texas. The high-frequency operation and other advanced performance advantages over Silicon enables GaN to empower applications from LIDAR to wireless power transmission. The booth exhibits include examples of these, from a real-time LIDAR demonstration to a running "wireless desk".

Power Electronics News
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宜普電源轉換公司(EPC)的專家攜手與工程師發揮氮化鎵元件及積體電路的最高性能,不僅替代MOSFET元件,更為市場帶來創新設計

宜普電源轉換公司(EPC)的專家攜手與工程師發揮氮化鎵元件及積體電路的最高性能,不僅替代MOSFET元件,更為市場帶來創新設計

EPC公司在3月14至16日於中國深圳及上海各大論壇及展會亮相,展示氮化鎵技術的卓越性能如何為整個半導體業界帶來全新電源轉換設計思路,包括無線充電、DC/DC、雷射雷達及汽車等應用領域。

EPC公司的管理及技術團隊在中國深圳及上海於3月14至16日舉行的各大業界論壇及展會上,與工程師會面並作技術交流。EPC團隊分享了如何發揮氮化鎵場效應電晶體(GaN FET)及積體電路的最高性能、創新設計,從而為工程師及其客戶,打造共創共贏新局面。

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EPC Introduces Two eGaN ICs Combining Gate Drivers with High Frequency GaN FETs for Improved Efficiency, Reduced Size and Lower Cost

EPC Introduces Two eGaN ICs Combining Gate Drivers with High Frequency GaN FETs for Improved Efficiency, Reduced Size and Lower Cost

EPC2112 and EPC2115 GaN-based monolithic integrated solutions offer power systems designers the ability to increase efficiency in an extremely small size.

EL SEGUNDO, Calif. — March 2018 — Efficient Power Conversion Corporation (EPC) announces the EPC2112 and EPC2115 enhancement-mode monolithic GaN power transistor with integrated driver products. The EPC2112 is a 200 V, 40-mΩ eGaN® FET plus integrated gate driver. In comparison, the EPC2115 is an integrated circuit with dual 150 V, 70-mΩ eGaN FETs plus gate drivers. Both products are capable of operating up to 7 MHz and are available in low inductance, extremely small, 2.9 mm x 1.1 mm BGA surface-mount passivated die.

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APEC 2018: 關於EPC氮化鎵元件的專業教育研討會

APEC 2018: 關於EPC氮化鎵元件的專業教育研討會

Alex Lidow與他的團隊隊員Michael de Rooij、David Reusch及John Glaser於今天早上的專業研討會上,與專業工程師(PE)分享實用的議題 -- “發揮氮化鎵場效應電晶體及積體電路的最高性能,不僅僅替代MOSFET器件”,使得整個教室被擠得水泄不通。

Planet Analog
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GaN Power Modules Deliver Over 1400 W/in3 for 48 V – 12 V DC-DC and Up to 10 MHz for Point-of-Load Power Conversion

GaN Power Modules Deliver Over 1400 W/in3 for 48 V – 12 V DC-DC and Up to 10 MHz for Point-of-Load Power Conversion

Efficient Power Conversion’s EPC9204 and EPC9205 power modules demonstrate the efficiency enhancements and significant size reduction achieved in DC-DC power conversion using high frequency switching eGaN® power transistors and integrated circuits.

EL SEGUNDO, Calif.— March 2018 — Efficient Power Conversion Corporation (EPC) introduces two new GaN power modules for DC-DC conversion, increasing efficiency across the 48 V to point-of-load power architecture. The EPC9205 is a high-power density PCB-based power module for 48 V – 12 V conversions while the EPC9204 address the 20 V – point-of-load conversion with an ultra-thin profile PCB-based power module.

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基於氮化鎵元件的48 V - 12 V非隔離穩壓式轉換器開發板,其功率密度每立方英吋超過1250W及效率可高於96%

基於氮化鎵元件的48 V - 12 V非隔離穩壓式轉換器開發板,其功率密度每立方英吋超過1250W及效率可高於96%

宜普公司的EPC9130五相開發板展示出採用高頻開關eGaN®功率電晶體、極小型化及增強了效率的電源轉換方案。

宜普電源轉換公司(EPC)的EPC9130開發板是一款48 V轉換至12 V的非隔離穩壓式開發板、具用五個相位、每相具12 A、最大輸出電流為60安培,開發板的輸出功率可以超過700 W。該板具超高功率密度(每立方英寸大於1250 W),其效率高於96%。

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Will GaN and the Tesla SpaceX car survive space radiation? Yes and no.

Will GaN and the Tesla SpaceX car survive space radiation? Yes and no.

Two space travel related stories hit my desktop this week; one that rapidly generated major international headlines and one that slid very quietly onto my email screen.

The headline-hitter was the successful launch of Elon Musk’s SpaceX rocket with its payload of a Tesla sports car, complete with a dummy driver at the wheel. The second was about Gallium Nitride technology that would be suitable for space applications.

Electro Pages
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Renesas Electronics Ships Space Industry’s First Radiation-Hardened 100V and 200V GaN FET Power Supply Solutions

Renesas Electronics Ships Space Industry’s First Radiation-Hardened 100V and 200V GaN FET Power Supply Solutions

SL70040SEH Low Side GaN FET Driver Powers ISL7002xSEH GaN FETs in Launch Vehicle and Satellite Power Supplies

TOKYO--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced the space industry’s first radiation-hardened, low side Gallium Nitride (GaN) field effect transistor (FET) driver and GaN FETs that enable primary and secondary DC/DC converter power supplies in launch vehicles and satellites, as well as downhole drilling and high reliability industrial applications. These devices power ferrite switch drivers, motor control driver circuits, heater control modules, embedded command modules, 100V and 28V power conditioning, and redundancy switching systems.

Business Wire
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