雜誌：Bodo's Power Systems
作者：Steve Soffels, Denis Marcon, and Stefaan Decoutere （IMEC）
日期： 1/2/2013
摘要：在功率電子行業中，氮化鎵技術從小眾、專業市場擴展。第一代氮化鎵電晶體 現正擴大其在功率電子市場的份額。

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作者 :Ashok Bindra
雜誌 :How2Power Today (2012年12月刊)

在過去的數年間雖然有很多討論關於基於氮化鎵的功率電晶體可以替代普遍使用的矽MOSFET器件，但矽基氮化鎵的功率場效應電晶體可能需要較長的時間才可以在電源轉換領域成為主流器件。目前數個全新應用的出現將有望實現氮化鎵技術所提供的優勢。除了具備商用及高可靠性的條件，氮化鎵器件的獨有特性正在促進全新應用的出現。

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By: Sun Changhua
Digitimes.com
December 20, 2012

www.digitimes.com.tw

The GaN power device industry has probably generated less than $2.5M revenues in 2011, as only 2 companies (IRF & EPC Corp.) are selling products on the open market. However, the overall GaN activity has seen extra revenues as R&D contracts, qualification tests and sampling for qualified customers was extremely buoyant.

http://www.news10.com/story/17735484/power-gan-2012?clienttype=printable

eGaN® FET 的高性能正在更快地被DC/DC 電源轉換、負載點轉換器、D類音訊放大器及高頻電路等應用採用,而TI推出業界首款100V半橋GaN FET驅動器(LM5113),經過優化,配合氮化鎵場效應電晶體使用,則更進一步推動eGaN FET在高性能電信、網路以及數據通信中心的應用。

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電子設計技術(2012年4月書刊)

EDN 電子雜誌2012年第04期

Written by Peter Clarke - 3/7/2012 2:20 PM EST

LONDON - The market for power devices implemented in gallium nitride was less than $2.5 million in 2011, according to market research firm Yole Developpement (Lyon, France). However, there is a great deal of R&D activity and Yole sees the power GaN market growing to nearly $0 million in 2012 and $500 million in 2016.

Gallium nitride has long been known to have useful properties when it comes to electronic components. Even so, its application has largely been confined to more exotic areas of the industry, particularly rf transistors.

But GaN is beginning to find application in what could be considered the mainstream, with some of its proponents suggesting its arrival could mark the beginning of the end for the traditional power mosfet.

By: Graham Pitcher
New Electronics
December 13, 2011
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Wide-bandgap materials, such as GaN and SiC, are enabling a new generation of power switching devices that switch faster and with fewer losses than the venerable silicon MOSFET, resulting in smaller, more efficient power supplies.

By Margery Conner
EDN
August 25, 2011

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EPC推出第2代200V及100mΩ功率電晶體

http://www.eettaiwan.com/ART_8800649345_675763_NP_84b96cfa.HTM

The EPC9004 has been recognized by Bodo’s Power Systems as the Product of the Month in the September, 2011 issue of the magazine. The EPC9004 facilitates rapid design of high frequency switching power conversion systems based on the 200 V EPC2012 with a ready-made, easy to connect development board.

Bodo's Power Systems
September, 2011

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高度集成的半橋柵極驅動器提高了高壓應用的功率密度和效率

EEFocus

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We know Efficient Power Conversion (EPC) has commercialized enhancement-mode GaN-on-Si FETs, or eGaN FETs as EPC calls them, for more than a year now. Concurrently, it has been working with partners to realize dedicated drivers for its eGaN FETs, which offer lower RDS(ON) at higher voltages, lower gate charge, and no reverse recovery loss (QRR)—all these properties from a smaller die size than silicon. In essence, by comparison to silicon MOSFETs, the eGaN FETs offer a dramatic reduction in figures of merit or FOM.

By Ashok Bindra
How2Power
June, 2011

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氮化镓(GaN)场效应晶体管作为用于高压电源转换电路的开关器件正在不断蚕食硅基场效应晶体管市场。

By Margery Conner
EDN
June 20, 2011

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我们对功率半导体最基本的要求是性能、可靠性、管控性及成本效益。它的高频率性能，可切合稳压器系统于体积及瞬态响应方面的需要而具更高价值，并为D类功率放大器提供高保真度。一个新器件结构如果不高效、不可靠的话，根本不可能商品化。市场上有很多新结构及原料可选择，但是接受度有限。不过，现在有氮化镓(Gallium Nitride/GaN)增强型功率管控器件问世，具有高导电性、极快开关、硅器件之成本结构及基本操作模式等优异性能，其代表就是宜普公司的新产品。

Stephen Colino, Robert Beach
今日电子
2010年9月

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自2004年GaN HEMT(高电迁移 率晶体管)问世以来，基于GaN材料 的新技术不断涌现，但由于成本偏 高和耗尽型 作的不方便，GaN晶体 管市场接受度一直受限，不过这一 局面有望得到改观。美国宜普公司 最近推出首款增强型硅基GaN功率晶 体管(简称eGaN FET)，可专门用于 替代MOSFET，而且使用标准硅制 造技术和设备，可以低成本大批量 生产。

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EPC, the first company to deliver enhancement mode GaN (eGaN™) FETs to the market, has been recognized by EDN for inclusion on their list of "100 Hot Products for 2010."

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The intermediate bus architecture (IBA) is currently the most popular power system architecture in computing and telecommunications equipment. It typically consists of a +48 V system power distribution bus that feeds on-board bus converters, which in turn supply power to nonisolated, dc-dc converters. These nonisolated converters generate the low supply voltages required to power the various logic circuits. Because of their proximity to the circuits they power, these converters are commonly referred to as point-of-load converters (POLs).

By Johan Strydom, EPC, El Segundo, Calif. and Bob White, Embedded Power Labs, Highlands Ranch, Colo.
How2Power
November, 2010

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The latest report from Yole Développement “GaN Technologies for Power Electronics Applications: Industry and Market Status & Forecasts” says the Total Accessible Market is $16.6b and is envisioned to be split into Power ICs, Power Discretes and Power Modules.

Compound Semiconductor
October 28, 2010

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EPC, the first company to deliver enhancement mode GaN (eGaNTM) FETs to the market, has been named in EE Times ‘60 Emerging Startups’ list for the second consecutive year

By Peter Clark
EE Times
November 7, 2010

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The weather was perfect in Chi-town at the Darnell Power Forum but the technologies were hot including a talk by Alex Lidow CEO of Efficient Power Conversion Corp., who discussed why the power industry should consider GaN for improving performance.

By Paul O’Shea
EEBEAT
September 14, 2010

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