In this video Alex Lidow, Founder and CEO of EPC, talks to Alix Paultre, Editor-in-Chief of Power Electronics News, about the various demonstrations of GaN-based solutions at the EPC booth at APEC 2018 in San Antonio, Texas. The high-frequency operation and other advanced performance advantages over Silicon enables GaN to empower applications from LIDAR to wireless power transmission. The booth exhibits include examples of these, from a real-time LIDAR demonstration to a running "wireless desk".

Power Electronics News
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LIDAR is made up of a laser (or arrays) capable of transmitting pulsed light over the required range of interest, and a high-speed, low-noise receiver for reflected signal analysis. A portion of this light is reflected or scattered back to the receiver according to the reflectivity of the target.

EDN Network
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EPC公司在3月14至16日於中國深圳及上海各大論壇及展會亮相，展示氮化鎵技術的卓越性能如何為整個半導體業界帶來全新電源轉換設計思路，包括無線充電、DC/DC、雷射雷達及汽車等應用領域。

EPC公司的管理及技術團隊在中國深圳及上海於3月14至16日舉行的各大業界論壇及展會上，與工程師會面並作技術交流。EPC團隊分享了如何發揮氮化鎵場效應電晶體（GaN FET）及積體電路的最高性能、創新設計，從而為工程師及其客戶，打造共創共贏新局面。

EPC2112 and EPC2115 GaN-based monolithic integrated solutions offer power systems designers the ability to increase efficiency in an extremely small size.

EL SEGUNDO, Calif. — March 2018 — Efficient Power Conversion Corporation (EPC) announces the EPC2112 and EPC2115 enhancement-mode monolithic GaN power transistor with integrated driver products. The EPC2112 is a 200 V, 40-mΩ eGaN^® FET plus integrated gate driver. In comparison, the EPC2115 is an integrated circuit with dual 150 V, 70-mΩ eGaN FETs plus gate drivers. Both products are capable of operating up to 7 MHz and are available in low inductance, extremely small, 2.9 mm x 1.1 mm BGA surface-mount passivated die.

Alex Lidow與他的團隊隊員Michael de Rooij、David Reusch及John Glaser於今天早上的專業研討會上，與專業工程師（PE）分享實用的議題 -- “發揮氮化鎵場效應電晶體及積體電路的最高性能，不僅僅替代MOSFET器件”，使得整個教室被擠得水泄不通。

Planet Analog
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Efficient Power Conversion’s EPC9204 and EPC9205 power modules demonstrate the efficiency enhancements and significant size reduction achieved in DC-DC power conversion using high frequency switching eGaN^® power transistors and integrated circuits.

EL SEGUNDO, Calif.— March 2018 — Efficient Power Conversion Corporation (EPC) introduces two new GaN power modules for DC-DC conversion, increasing efficiency across the 48 V to point-of-load power architecture. The EPC9205 is a high-power density PCB-based power module for 48 V – 12 V conversions while the EPC9204 address the 20 V – point-of-load conversion with an ultra-thin profile PCB-based power module.

宜普公司的EPC9130五相開發板展示出採用高頻開關eGaN^®功率電晶體、極小型化及增強了效率的電源轉換方案。

宜普電源轉換公司(EPC)的EPC9130開發板是一款48 V轉換至12 V的非隔離穩壓式開發板、具用五個相位、每相具12 A、最大輸出電流為60安培，開發板的輸出功率可以超過700 W。該板具超高功率密度（每立方英寸大於1250 W），其效率高於96%。

Gamers may not care about the finer points of gallium nitride (eGaN) chips as evangelized by power pioneer Alex Lidow, CEO of Efficient Power Conversion (EPC). But they will care that those chips will enable a new generation of gaming laptops with much smaller power supplies than in the past.

Venture Beat
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Two space travel related stories hit my desktop this week; one that rapidly generated major international headlines and one that slid very quietly onto my email screen.

The headline-hitter was the successful launch of Elon Musk’s SpaceX rocket with its payload of a Tesla sports car, complete with a dummy driver at the wheel. The second was about Gallium Nitride technology that would be suitable for space applications.

Electro Pages
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SL70040SEH Low Side GaN FET Driver Powers ISL7002xSEH GaN FETs in Launch Vehicle and Satellite Power Supplies

TOKYO--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced the space industry’s first radiation-hardened, low side Gallium Nitride (GaN) field effect transistor (FET) driver and GaN FETs that enable primary and secondary DC/DC converter power supplies in launch vehicles and satellites, as well as downhole drilling and high reliability industrial applications. These devices power ferrite switch drivers, motor control driver circuits, heater control modules, embedded command modules, 100V and 28V power conditioning, and redundancy switching systems.

Business Wire
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Best design practices utilize the advantages offered by eGaN FETs, including printed circuit board (PCB) layout and thermal management. As GaN transistor switching charges continue to decrease, system parasitics must also be reduced to achieve maximum switching speeds and minimize parasitic ringing typical of power converters.

Power Electronics
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Developers are hard at work on the machine learning necessary for safer and more-autonomous vehicles. But all the AI in the world won’t be enough if the car relies on inadequate sensors. That was clearly demonstrated in one fatal Tesla crash that occurred in part because the car’s camera didn’t correctly identify an oncoming truck. To ensure smart vehicles have a reliable model of surrounding objects — particularly the ones the cars identify as “threats” — most rely on one or more lidars, or laser-based remote sensors.

Extreme Tech
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LAS VEGAS — Once again the marathon that is CES is drawing to a close. Four days of trade show plus two days of media events. All sprawled across five miles of Las Vegas in some insane number of hotels and conference venues. As usual, I stuck it out so you don’t have to. Here are some of the images that struck me as interesting, weird, or just plain worth remembering:

Extreme Tech
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Wireless power, the ability to deliver electricity to gadgets without plugging those gadgets into a cable, is a hotbed of innovation at the moment. The dominant standard, called “Qi,” is ever under attack from other efforts.

This week saw interesting developments from Energous (WATT), which aims to transfer power via radio frequency transceivers, with limited results so far, and some controversy about its business.

There are other contenders. On Wednesday in Las Vegas, during the Consumer Electronics Show, I met with Alex Lidow, who is founder of a privately held chip company EPC of El Segundo, California.

Barron's
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This article takes a deep dive into lidar technology. It explains how the technology works and the challenges technologists face as they try to build lidar sensors that meet the demanding requirements for commercial self-driving cars.

The bottom line is that while bringing lidar costs down will take a significant amount of difficult engineering work, there don't seem to be any fundamental barriers to bringing the cost of high-quality lidar down below $1,000—and eventually below $100. That means the technology—and ultimately, self-driving vehicles that depend on lidar—should be well within reach for ordinary consumers.

Ars Techinca
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宜普公司為功率系統設計師提供比等效MOSFET小型化8倍的40 V、5 mΩ氮化鎵功率電晶體（EPC2049），應用於負載點（POL）轉換器、雷射雷達（LiDAR）及具低電感的馬達驅動器。

宜普電源轉換公司（EPC）宣佈推出EPC2049功率電晶體，應用於負載點（POL）轉換器、雷射雷達（LiDAR）、波峰追蹤電源、D類音頻放大器及具低電感的馬達驅動器。 EPC2049電晶體的額定電壓為40 V、最大導通阻抗為5 mΩ及脈衝輸出電流為175 A。

EPC公司將於國際消費電子展CES^® 2018並於AirFuel^TM聯盟展覽攤位展示氮化鎵（GaN）半導體如何實現大面積電源。此外，EPC在其Hospitality Suite將展示家居無線電源系統，以及基於氮化鎵元件並應用於全自動汽車、領先業界的雷射雷達系統。

EPC公司將於2018年1月9日至12日在美國拉斯維加斯舉行的國際消費電子展（CES 2018）展示eGaN^®技術如何實現兩種改變業界遊戲規則的消費電子應用 -- 分別是無線充電及自動駕駛汽車的雷射雷達應用。

如果要無線充電得以普及， 無線充電系統必需從小型充電墊發展成為大面積無線電源。這就需要磁共振系統的線圈、系統架構及功率放大器各方面的基本改變。基於氮化鎵元件的放大器已經被證明為可以在廣闊的負載範圍內發送60 W功率至發射線圈並實現超過90% 的效率。

作者：張遠哲及Michael A. de Rooij
Power Electronics Europe雜誌
2017年11月/ 12月刊
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EPC9126HC開發板採用具備超快速功率轉換特性的氮化鎵場效應電晶體(eGaN FET)，由於可以驅動高達150 A及可低至5 ns脈寬的脈衝大電流，因此可以提高雷射雷達（LiDAR）系統所偵測的資料的質素，包括資料的準確性、精確度及製作速度。

宜普電源轉換公司（EPC）宣佈推出全新的100 V、150 A大電流脈衝雷射二極體的驅動演示電路板（EPC9126HC）。面向全自動汽車應用的雷射雷達系統需要製作三維地圖，因此，偵測四周的目標物件的速度及準確性變得非常重要。從EPC9126HC演示電路板可以看到，與等效MOSFET相比，具備快速轉換特性的氮化鎵場效應電晶體(eGaN FET)所提供的脈衝功率可以快十倍的速度驅動雷射二極體，從而提升雷射雷達系統的整體性能。

EPC2040, an eGaN^® power transistor optimized for LiDAR applications, placed first in the Passive Components & Discrete Semiconductors category of ECN magazine’s prestigious 2017 Impact Award.

EL SEGUNDO, Calif — November  2017 — Efficient Power Conversion Corporation’s (EPC) is proud to announce that Electronic Component News (ECN) — a leading trade publication for electronic design engineers — has awarded the EPC2040, enhancement mode gallium nitride (eGaN) transistor its ECN Impact Award for 2017 in the Passive Components and Discrete Semiconductors category.