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事實證明,15 V ~ 350 V 氮化鎵異質結場效應功率電晶體在功率轉換、馬達控制和光達等應用中,無論是在效率、尺寸、速度和成本方面都比矽元件更具優勢 。氮化鎵積體電路為許多高頻應用提供了多方面的系統級優勢。 氮化鎵積體電路才剛剛發展,其優勢肯定會隨著其技術發展而不斷增强。
Bodo’s Power Systems
2023年6月
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宜普電源轉換公司(EPC)是增强型氮化鎵 (GaN) FET 和 IC產品的領導者,在紐倫堡舉行的 PCIM Europe 2023展會上分享了關於氮化鎵技術的發展和其應用的演示。 我們與該公司的聯合創始人暨首席執行長 Alex Lidow 就電力電子行業和氮化鎵技術對行業的影響進行了深度交流。
Electronic Design
2023年5月
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In this episode of Spirit: Behind the Screen, Spirit Electronics CEO Marti McCurdy chats with EPC’s CEO Alex Lidow and Marketing Director Renee Yawger about the progress of GaN. They discuss GaN’s performance under high radiation as well as the extensive testing, failure modes and device lifespan detailed in EPC’s Phase 15 reliability report. With the full potential of GaN still to be explored and new EPC products releasing frequently, including new half-bridge drivers, low-side drivers and full power stage, GaN is especially useful in New Space and commercial space applications.
Spirit: Behind the Screen
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Case Spotlights Next-Gen Tech Replacing Silicon
(El Segundo, California)—Efficient Power Conversion Corporation (EPC), the global leader in gallium nitride (GaN) technology, today filed complaints in federal court and in the U.S. International Trade Commission (ITC) asserting four patents of its foundational patent portfolio against Innoscience (Zhuhai) Technology Company, Ltd. and its affiliates (collectively, Innoscience). These patents cover core aspects of the design and manufacturing process of EPC’s proprietary enhancement-mode gallium nitride power semiconductor devices. These patents encompass innovations that enabled GaN-based power devices to mature from a research project to a mass-producible high-volume alternative to silicon-based transistors and integrated circuits with GaN devices having higher efficiency, smaller size, and lower cost.
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Monolithic GaN integration has matured to the point that complex circuits such as a half bridge gate driver with various features can now be realized. This article will cover DC-to-DC and BLDC motor drive application examples that benefit from monolithic half-bridge integration.
Power Electronics News
May, 2023
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基於氮化鎵元件的EPC9186逆变器参考設計增强了高功率應用的電機系统性能、精度、扭矩扭矩和可實現更長的續航里程。
宜普電源轉換公司(EPC)新推EPC9186,這是一款採用EPC2302 eGaN®FET的三相BLDC馬達控制逆变器。EPC9186支持14 V~ 80 V的輸入直流電壓。大功率EPC9186支持電動滑板車、小型電動汽車、農業機械、叉車和大功率無人機等應用。
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Modern solar panels are demanding increasingly higher power density and longer operating lifetimes. Solar applications including power optimizers and panels with built-in microinverters are becoming the prevailing trend for an increasing number of solar customers, where low voltage GaN power devices (VDS < 200 V) are extensively used.
Bodo’s Power Systems
May, 2023
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Gallium nitride (GaN) transistors and ICs have the best attributes to satisfy BLDC inverter needs. The superior switching capability of GaN helps to remove dead time and increase PWM frequency to obtain unmatched sinusoidal voltage and current waveforms for smoother, silent operation with higher system efficiency
Power Systems Design
May, 2023
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宜普電源轉換公司(EPC)和Analog Devices(ADI)公司携手新推的参考設計採用經過全面优化的新型模擬控制器来驅動EPC的氮化鎵場效應電晶體,可實現超過96.5%的效率。
宜普電源轉換公司(EPC)宣佈新推EPC9158,這是一款工作在500 kHz開關頻率的雙輸出同步降壓轉換器参考设计,可將48 V~54 V的輸入電壓轉換為12 V穩壓輸出,可提供高達每相25 A電流或50 A總連續電流。ADI的新型LTC7890同步氮化鎵降壓控制器与EPC的超高效GaN FET相结合,可為高功率密度應用提供佔板面積小且非常高效的解決方案。該解決方案在48 V/12 V 、50 A連續電流下可實現 96.5%的效率。
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EPC’s GaN Experts will be available during PCIM Europe 2023, showcasing the latest generation of GaN FETs and ICs in a wide variety of real-world applications.
EL SEGUNDO, Calif. — April 2023 — — EPC, the world’s leader in enhancement-mode gallium nitride FETs and ICs,will be delivering multiple technical presentations on GaN technology and showcasing applications at PCIM Europe 2023 in Nuremburg, 09 – 11 May (see detailed schedule below). In addition, the company will demonstrate its latest eGaN® FETs and ICs in a large variety of customer end products in Hall 9, Stand 318.
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In this episode of The EEcosystem Podcast, our guest is Dr. Alex Lidow, CEO and co-founder of Efficient Power Conversion. In this episode, we will find out more about Alex and learn about MOSFETs and the rise of GaN. How did MOSFETs grow so quickly? What technologies are driving GaN adoptions and why. We will also discuss the potential obstacles to GaN adoption. This and many more questions will be answered as we go along! Listen to this episode to learn more!
April, 2023
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This article discusses the advantages of GaN-based power stages and introduces a sample device from EPC, implemented in a half-bridge topology. It explains how to use associated development kits to quickly get started on a project. In the process, designers will learn how to measure the parameters of a BLDC motor and operate it in sensorless field orientation control (FOC) with minimal programming effort using Microchip Technology’s motorBench Development Suite.
Digi-Key Electronics
April, 2023
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Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions with two new devices rated at 100 V and 200 V to address a multitude of critical spaceborne and other high-reliability .
EL SEGUNDO, Calif.— April 2023 — EPC announces the introduction of two new radiation-hardened GaN FETs. The EPC7020 is a 200 V, 11 mΩ, 170 APulsed, rad-hard GaN FET in a small 12 mm2 footprint. The EPC7003 is a 100 V, 30 mΩ, 42 APulsed, rad-hard GaN FET in a tiny 1.87 mm2 footprint. Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated breakdown. These new devices, along with the rest of the Rad Hard family, EPC7019, EPC7014, EPC7004, EPC7018, EPC7007, are offered in a chip-scale package, the same as the commercial eGaN® FET and IC family. Packaged versions will be available from EPC Space.
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宜普電源轉換公司(EPC) 擴展了其封裝兼容的ePower™ IC系列,提高功率密度和簡化設計以滿足DC/DC應用、馬達控制器和D類音頻放大器的不同功率要求。
繼早前推出的100 V、35 A功率級IC(EPC23102)之後,EPC公司新推兩款100V功率級IC,其額定電流分別為15 A(EPC23104)和25 A(EPC23103)。
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With Electronic Power Steering (EPS), the hydraulic system is replaced with an electric motor that aids the driver only when needed. Its digital assistance control can be modified online to adapt to driving conditions. There are, however, several design constraints to consider. One is that the driver does not want to lack the haptic feedback from the tires, especially when a vehicle is large, such as a truck. Other constraints are determined by safety regulations, particularly for automatic guided vehicles. These constraints require adopting an efficient, accurate and redundant system. Gallium nitride technology helps the designers in all these areas.
Power Electronics News
March, 2023
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EL SEGUNDO, Calif.— March 2023 – Efficient Power Conversion (EPC), the world’s leader in enhancement-mode gallium nitride FETs and ICs, has teamed up with SHARGE Technology (SHARGE) to design a 67 W USB PD charger with a power display screen. The Retro 67 fast charger uses EPC’s 100 V GaN FET, EPC2218, which can deliver 231 A pulsed current in a tiny footprint of 3.5 mm x 1.95 mm offering designers a significantly smaller, more efficient device than silicon MOSFET for USB PD fast chargers.
EPC2218 provides SHARGE’s All-GaN fast charger with higher efficiency, state-of-the-art power density and lower system cost.
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Since the launch of GaN-on-Si enhancement mode power transistors in March 2010 there has been a slow but monotonic shift towards adoption and replacement of silicon-based power MOSFETs. Initial adoption came from risk-taker visionaries in applications such as lidar, high-end audio amplifiers, robots, vehicle headlamps, and high-performance DC-DC converters. For the expansion of GaN for power conversion to get beyond the early adopters, a more user-friendly format than the WLCP needed to be developed. This format, however, needed to preserve the key attributes of small size, low RDS(on), high speed, excellent thermal conductivity, and low cost. In other words, the best package would be the least amount of package technically possible. Enter the PQFN…
Bodo’s Power Systems
March, 2023
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With the increase in government mandates to combat climate change, automakers are moving quickly to leverage new technology to respond by switching from the internal combustion engine to electric-drive vehicles. This article presents the design of a 2 kW, two-phase 48 V/12 V bi-directional converter using GaN FETs that achieves 96% efficiency and is targeted for the 48 V mild hybrid system.
PSD North America
March, 2023
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EPC的GaN專家將在其APEC展位展示各種應用所採用的最新一代GaN FET 和 IC。
宜普電源轉換公司(EPC)是增强型氮化鎵FET和IC領域的全球領導者,將於3月19日至23日在奧蘭多舉行的IEEE APEC 2023會議上發表多項技術演講,詳情請參閱下方時間表。此外,我們還會在奧蘭治縣會議中心的732號展位展示最新一代的 eGaN®FET和IC,其應用範圍包括高功率密度計算、電動汽車、機器人、太陽能、電池充電等。歡迎蒞臨參觀“GaN之牆”,我們提供市場上最廣泛的氮化鎵功率半導體產品組合,可現成交付。
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