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Long talked about, wide bandgap gallium nitride-on-silicon (GaN-on-Si) transistors are now commercially available. They are being touted for replacing silicon-based MOSFETs, which are turning out to be inefficient for many high-performance power supply designs. Recently, several suppliers of GaN-on-Si-based HEMTs and FETs have emerged in the marketplace, among them Efficient Power Conversion (EPC). To expedite the evaluation of eGAN FETs for power supply designs transitioning from silicon MOSFETs to eGaN FETs, EPC has released several development boards in the last few years.
By Ashok Bindra
Digi-Key Article Library
July 15, 2014
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高壓氮化鎵器件即將商用化,製造商終於可預期它的市場發展速度將非常迅猛
雜誌:Compound Semiconductor
2014年7月
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氮化鎵器件於2020年的銷售額預期可達差不多6億美元幷大約需要製造58萬片6英寸晶圓。氮化鎵器件的市場將於2016年起發展迅猛,至2020年的複合年均增長率達80%,這個預期是基于EV/HEV預計從2018至2019年開始採納氮化鎵得出。於2015年至2018年,電源供電/功率因數校正將成爲主要市場幷將最後占氮化鎵器件銷售總額 50%,届時氮化鎵器件於車用市場將急起直追。
Yole Development公司
2014年6月
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矽半導體技術的供應鏈已經投放超過千億美元,使得它難以置信地極具效率。製造新興的高性能氮化鎵電晶體如何在這方面可與矽器件匹敵?答案很簡單,我們利用矽器件的現有供應鏈來製造氮化鎵器件,因此可大大降低氮化鎵電晶體的製造成本。
Power Systems Design
作者:Alex Lidow
2014年 5月 27日
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應用於功率轉換領域的矽器件的性能已接近其理論極限。氮化鎵(GaN)及碳化矽(SiC)將取代大部分市值120億美元的矽功率MOSFET市場。目前已經有產品投產,其性能比矽器件的理論性能極限好5至10倍。
雜誌:Bodo’s Power Systems
作者:Alex Lidow
2014年5月
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Examining new products released by: Texas Instruments, Analog Devices, Linear Technology, Maxim-Integrated, Intersil, Fairchild, EPC, and IR, Don Tuite finds a common thread: the companies’ products are doing the heavy lifting for their customers.
Electronic Design
Don Tuite
January 6, 2014
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Gallium nitride has long been known to have useful properties when it comes to electronic components. Even so, its application has largely been confined to more exotic areas of the industry, particularly rf transistors.
But GaN is beginning to find application in what could be considered the mainstream, with some of its proponents suggesting its arrival could mark the beginning of the end for the traditional power mosfet.
By: Graham Pitcher
New Electronics
December 13, 2011
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MOSFET、IGBT可以休矣,即将成为过去,在这个250亿美元的市场取而代之的将是GaN功率器件——这是EPC首席执行官Alex Lidow日前在接受EDN China专访时的说法。Lidow博士之前在IR担任了12年CEO,在2007年他创立了宜普电源转换公司(Efficient Power Conversion Corporation,EPC),他在斯坦福大学的博士论文就是关于HEXFET功率MOSFET的,是相关专利的发明者之一。在HEXFET专利过期之前,相关版税已超过9亿美元。
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