SL70040SEH Low Side GaN FET Driver Powers ISL7002xSEH GaN FETs in Launch Vehicle and Satellite Power Supplies

TOKYO--(BUSINESS WIRE)--Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today announced the space industry’s first radiation-hardened, low side Gallium Nitride (GaN) field effect transistor (FET) driver and GaN FETs that enable primary and secondary DC/DC converter power supplies in launch vehicles and satellites, as well as downhole drilling and high reliability industrial applications. These devices power ferrite switch drivers, motor control driver circuits, heater control modules, embedded command modules, 100V and 28V power conditioning, and redundancy switching systems.

Business Wire
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Best design practices utilize the advantages offered by eGaN FETs, including printed circuit board (PCB) layout and thermal management. As GaN transistor switching charges continue to decrease, system parasitics must also be reduced to achieve maximum switching speeds and minimize parasitic ringing typical of power converters.

Power Electronics
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Developers are hard at work on the machine learning necessary for safer and more-autonomous vehicles. But all the AI in the world won’t be enough if the car relies on inadequate sensors. That was clearly demonstrated in one fatal Tesla crash that occurred in part because the car’s camera didn’t correctly identify an oncoming truck. To ensure smart vehicles have a reliable model of surrounding objects — particularly the ones the cars identify as “threats” — most rely on one or more lidars, or laser-based remote sensors.

Extreme Tech
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Wireless power, the ability to deliver electricity to gadgets without plugging those gadgets into a cable, is a hotbed of innovation at the moment. The dominant standard, called “Qi,” is ever under attack from other efforts.

This week saw interesting developments from Energous (WATT), which aims to transfer power via radio frequency transceivers, with limited results so far, and some controversy about its business.

There are other contenders. On Wednesday in Las Vegas, during the Consumer Electronics Show, I met with Alex Lidow, who is founder of a privately held chip company EPC of El Segundo, California.

Barron's
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This article takes a deep dive into lidar technology. It explains how the technology works and the challenges technologists face as they try to build lidar sensors that meet the demanding requirements for commercial self-driving cars.

The bottom line is that while bringing lidar costs down will take a significant amount of difficult engineering work, there don't seem to be any fundamental barriers to bringing the cost of high-quality lidar down below $1,000—and eventually below $100. That means the technology—and ultimately, self-driving vehicles that depend on lidar—should be well within reach for ordinary consumers.

Ars Techinca
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EPC公司將於國際消費電子展CES^® 2018並於AirFuel^TM聯盟展覽攤位展示氮化鎵（GaN）半導體如何實現大面積電源。此外，EPC在其Hospitality Suite將展示家居無線電源系統，以及基於氮化鎵元件並應用於全自動汽車、領先業界的雷射雷達系統。

EPC公司將於2018年1月9日至12日在美國拉斯維加斯舉行的國際消費電子展（CES 2018）展示eGaN^®技術如何實現兩種改變業界遊戲規則的消費電子應用 -- 分別是無線充電及自動駕駛汽車的雷射雷達應用。

如果要無線充電得以普及， 無線充電系統必需從小型充電墊發展成為大面積無線電源。這就需要磁共振系統的線圈、系統架構及功率放大器各方面的基本改變。基於氮化鎵元件的放大器已經被證明為可以在廣闊的負載範圍內發送60 W功率至發射線圈並實現超過90% 的效率。

作者：張遠哲及Michael A. de Rooij
Power Electronics Europe雜誌
2017年11月/ 12月刊
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EPC9126HC開發板採用具備超快速功率轉換特性的氮化鎵場效應電晶體(eGaN FET)，由於可以驅動高達150 A及可低至5 ns脈寬的脈衝大電流，因此可以提高雷射雷達（LiDAR）系統所偵測的資料的質素，包括資料的準確性、精確度及製作速度。

宜普電源轉換公司（EPC）宣佈推出全新的100 V、150 A大電流脈衝雷射二極體的驅動演示電路板（EPC9126HC）。面向全自動汽車應用的雷射雷達系統需要製作三維地圖，因此，偵測四周的目標物件的速度及準確性變得非常重要。從EPC9126HC演示電路板可以看到，與等效MOSFET相比，具備快速轉換特性的氮化鎵場效應電晶體(eGaN FET)所提供的脈衝功率可以快十倍的速度驅動雷射二極體，從而提升雷射雷達系統的整體性能。

EPC2040, an eGaN^® power transistor optimized for LiDAR applications, placed first in the Passive Components & Discrete Semiconductors category of ECN magazine’s prestigious 2017 Impact Award.

EL SEGUNDO, Calif — November  2017 — Efficient Power Conversion Corporation’s (EPC) is proud to announce that Electronic Component News (ECN) — a leading trade publication for electronic design engineers — has awarded the EPC2040, enhancement mode gallium nitride (eGaN) transistor its ECN Impact Award for 2017 in the Passive Components and Discrete Semiconductors category.

Alex Lidow, CEO of Efficient Power Conversion, talks to Leo Laporte about Gallium Nitride, and how it is being used to create the next generation of microchips and wirelessly power the world.

This Week in Technology
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The EPC9086 high efficiency half-bridge development board can operate up to 10 MHz featuring a 30 V EPC2111 eGaN^® half bridge in combination with the recently introduced high speed Peregrine Semiconductor PE29102 gate driver.

EL SEGUNDO, Calif.—October 2017 — Efficient Power Conversion Corporation (EPC) today announces the availability of The EPC9086 development board, a high efficiency half-bridge development board that can operate up to 10 MHz.  The EPC9086 board measures 2” x 2” and contains a 30 V, 15 A EPC2111 enhancement-mode gallium nitride half bridge in combination with the recently introduced PE29102 gate driver from Peregrine Semiconductor.

MIGVAN now represents EPC’s Israel sales, marketing, and technical support to assist customers in adopting eGaN^® FETs and ICs for leading-edge power conversion systems using gallium nitride

EL SEGUNDO, Calif.— October 2017 — To support its accelerating growth throughout Israel, Efficient Power Conversion Corporation (EPC) is proud to announce the appointment of MIGVAN as its sales, marketing, and technical support representative.  MIGVAN Technologies & Engineering Ltd, founded in 1988, is devoted to promoting and selling advanced technology electronic components and subsystems to the Israeli electronics industry.

Superior characteristics of eGaN^® FETs and ICs, such as low output capacitance, low input capacitance, low parasitic inductances, and small size used in these demonstration kits show that GaN FETs and ICs are ideal for increasing efficiency in highly resonant, AirFuel™ Alliance compatible wireless power transfer systems.

EL SEGUNDO, Calif.—October 2017 — Efficient Power Conversion Corporation (EPC) today announces the availability of two new demonstration kits -- the EPC9127, a complete wireless power kit including a 10 W, class 2 amplifier, category 3 receiver device and the EPC9128, consisting of a 16 W, class 3 amplifier and two receiver devices (categories 3 and 4). These systems, coupled with previously announced EPC9120, 33 W class 4 and the EPC9121 multi-mode kit capable of operating to either an AirFuel Class 2 standard with a category 3 device or a Qi (A6)/PMA standard with a compatible receiving device provide a full range of wireless power demonstration kits to allow for complete, wide-spread implementation.

宜普公司將於2017年無線電力峰會展示創新的桌面無線充電系統。該桌面是利用基於氮化鎵器件的磁共振技術在大面積上同時對多個接收無線電源的設備充電，包括手機、 筆記型電腦及桌燈！

無線充電的將來發展及最後能否得以普及，要看最終用戶可否在無線充電桌面上放置任何電子設備而不需要插上插頭來接通電源。宜普公司將於10月5日至6日在美國科羅拉多州的丹佛市的Embassy Suites酒店所舉行的2017年無線電力峰會，與工程師分享如何實現大面積無線充電解決方案。

宜普電源轉換公司首席執行官兼共同創辦人Alex Lidow展示大面積無線充電技術如何傳送電源。

Digital Journal
2017年9月18日
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面向全新及目前由MOSFET支援的應用的最新EPC氮化镓（eGaN^®）電晶體及積體電路系列，在提升性能及降低成本方面實現質的飛躍。

宜普電源轉換公司（EPC）第五代氮化鎵（eGaN）電晶體及積體電路系列榮獲《今日電子》與21IC中國電子網頒發2017年度“Top10電源產品—最佳應用獎”。該獎項在2017年9月15日於北京舉行的電源技術研討會上頒發。

EPC CEO & Co-Founder, Alex Lidow was a featured guest on Cheddar TV sharing how GaN technology is enabling new and disruptive technologies, such as LiDAR for self-driving cars and power conversion transistors and ICs for wide-area wireless power and medtech.

Cheddar
September 11, 2017
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Nextbigfuture訪問了EPC公司的首席執行長Alex Lidow。 EPC公司是製造氮化鎵電晶體的領導廠商，目前帶領業界開啟無線充電新時代。在5至10年內，我們將有可能看到全屋或辦公大樓從採用昂貴的電源線改為在廣泛地方採用無線充電解決方案。

NextBigFuture
2017年9月9日
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具備卓越性能的氮化鎵場效應電晶體（eGaN^®FET），例如低輸出電容、低輸入電容、低寄生電感及小型化，成為高度共振式並與AirFuel^™標準相容的無線充電系統的理想元件，可提高效率。

宜普電源轉換公司（EPC）宣佈推出與AirFuel聯盟第四級別（Class 4）規格相容的無線充電套件（EPC9120）。該系統可對應用提供高達33 W功率而同時工作在6.78 MHz頻率（最低ISM頻段），旨在於高效無線充電應用中，簡化對所採用的氮化鎵場效應電晶體（eGaN FET）進行評估。EPC9120採用具備高頻開關性能的EPC氮化鎵電晶體，使得無線充電系統可以在不同的工作條件下，實現80%至90%的效率。

EPCが無線充電用途向けeGaN FETとパワーキットに関するデータ一覧

日経BP社
2017年6月15日
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