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Thermal design for a high density GaN-based power stage

Thermal design for a high density GaN-based power stage

eGaN FETs and ICs enable very high-density power converter design, owing to their compact size, ultra-fast switching, and low on-resistance. The limiting factor for output power in most high-density converters is junction temperature, which prompts the need for more effective thermal design. The chip-scale packaging of eGaN FETs and ICs offer six-sided cooling, with effective heat extraction from the bottom, top, and sides of the die. This article presents a high-performance thermal solution to extend the output current capability of eGaN-based converters.

EDN
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The Amazing New World of Gallium Nitride

The Amazing New World of Gallium Nitride

From the heart of Silicon Valley comes a new buzzword. Gallium nitride is the future of power technology. Tech blogs are touting gallium nitride as the silicon of the future, and you are savvy enough to get in on the ground floor. Knowing how important gallium nitride is makes you a smarter, better consumer. You are at the forefront of your peer group because you know of an up and coming technology, and this one goes by the name of gallium nitride.

HACKADAY
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EPC: Ahead of the Pack

EPC: Ahead of the Pack

EPC's chief executive, Alex Lidow, believes his GaN devices now beat silicon on performance and price, reports Rebecca Pool.

For EPC chief executive, Alex Lidow, this year's PCIM Europe 2019 has been all about applications. Presenting myriad enhanced-mode GaN FETs and ICs in end-products, the company is making a big play for 48 V DC-DC power conversion in advanced computing and automotives.

Compound Semiconductor
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EPC於歐洲PCIM展會展示基於eGaN技術、面向汽車、運算及其他多種應用、具高功率密度的高效DC/DC功率轉換

EPC於歐洲PCIM展會展示基於eGaN技術、面向汽車、運算及其他多種應用、具高功率密度的高效DC/DC功率轉換

宜普電源轉換公司(EPC)將於歐洲PCIM展會現場演示優越的氮化鎵技術如何提升多種應用所需的電源供電效率,包括運算、通信及運輸行業。

EPC團隊將於5月7日至9日在德國的Nuremberg、歐洲PCIM展覽及研討會的會場,進行7場關於氮化鎵(GaN)技術及應用的演講,並於7號展館、335展覽攤位與工程師會面並分享最新的、基於eGaN® FET及積體電路的終端客戶產品。

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車規級80 V EPC2214 eGaN FET使得雷射雷達系統看得更清晰

車規級80 V EPC2214 eGaN FET使得雷射雷達系統看得更清晰

宜普電源轉換公司(EPC)進一步擴大車規級氮化鎵產品系列 -- 全新成員是面向具有高解析度的雷射雷達系統、80 V的EPC2214氮化鎵場效應電晶體,該元件成功通過國際汽車電子協會所制定的AEC Q101應力測試認證。

宜普電源轉換公司(EPC)宣佈再多一個車用氮化鎵(eGaN)元件(80 V的EPC2214)成功通過AEC Q101測試認證,可在車用及其他嚴峻環境支持多種全新應用。

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氮化鎵技術可以提升面向伺服器及汽車應用的48 V DC/DC 功率轉換的效率

氮化鎵技術可以提升面向伺服器及汽車應用的48 V DC/DC 功率轉換的效率

宜普電源轉換公司(EPC)推出兩個全新100 V氮化鎵元件,可以支援伺服器及汽車應用的48 V轉換的要求。 我將在處理器、車用及能量存儲系統等方面探討48 V伺服器的功率轉換解決方案(可參考我的文章 “雙向DC/DC電源供電: 我們應該如何取向?”),未來將在EDN文章中看到。氮化鎵功率電晶體必需是這些不同架構的一部份 -- 我相信沒有其他更優越的元件可以替代氮化鎵元件了 。

Planet Analog
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APEC 2019影片

APEC 2019影片

宜普電源轉換公司的基於氮化鎵的元件乃前沿技術。在本影片,宜普公司的首席執行長Alex Lidow於APEC展會現場與 Alix Paultre分享多個design in項目,從而展示基於氮化鎵的元件的各種優勢。

Embedded Computer Design
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矽已經死亡

矽已經死亡

宜普電源轉換公司首席執行長兼共同創辦人Alex Lidow於APEC 2019展覽會的Ridley Engineering展覽攤位進行演講,題目是“矽已經死亡”。

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PSDtv - EPC on Why Silicon is Dead at APEC 2019

PSDtv - EPC on Why Silicon is Dead at APEC 2019

In this episode of PSDtv Alex Lidow, Chief Executive Officer and Co-Founder of Efficient Power Conversion (EPC) is at APEC 2019 in Anaheim and discusses why their GaN on Silicon devices make Silicon now dead.

PSDtv
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Efficient Power Conversion (EPC) Expands 100 V eGaN FET Family Offering Designers Best-in-Class Performance and Cost for 48 V DC-DC Conversion

Efficient Power Conversion (EPC) Expands 100 V eGaN FET Family Offering Designers Best-in-Class Performance and Cost for 48 V DC-DC Conversion

EPC introduces 100 V, 3.8 milliohm EPC2053 eGaN® FET, joining the EPC2045, EPC2052, and EPC2051 to offer a comprehensive 100 V family of GaN transistors that are more efficient, smaller, and lower cost for high performance 48 V DC-DC conversion.

EL SEGUNDO, Calif. — April 2019 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2053 (3.8 mΩ, 100 V) eGaN FET.

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宜普電源轉換公司(EPC)推出面向48 V DC/DC電源轉換、馬達控制及雷射雷達應用的100 V氮化鎵(eGaN)功率電晶體

宜普電源轉換公司(EPC)推出面向48 V DC/DC電源轉換、馬達控制及雷射雷達應用的100 V氮化鎵(eGaN)功率電晶體

專為功率系統設計師而設的EPC2052功率電晶體是一種100 V、13.5 mΩ並採用超小型晶片級封裝的電晶體,可實現74 A脈衝輸出電流。面向48 V-12 V DC/DC功率轉換器,這些新一代氮化鎵場效應電晶體工作在500 kHz頻率下,可實現超過97%的效率。如果工作在1 MHz時,則實現超過96%的效率。

宜普電源轉換公司(EPC)宣佈推出100 V的EPC2052氮化鎵場效應電晶體,其占板面積只是2.25平方毫米、最大導通阻抗(RDS(on))為13.5 mΩ及脈衝輸出電流高達74 A 以支援高效功率轉換。

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It's Time to Rethink Power Semiconductor Packaging

It's Time to Rethink Power Semiconductor Packaging

When the issue invariably turns to the packaging of the power semiconductor – transistor, diode, or integrated circuit – the requests for improvement fall into six categories:

1. Can you make the package smaller?
2. Can you reduce the package inductance?
3. Can you make the product with lower conduction losses?
4. Can you make the package more thermally efficient?
5. Can you sell the product at a lower price?
6. Can you make the package more reliable?

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Powering graphics processors from a 48-V bus

Powering graphics processors from a 48-V bus

New converter topologies and power transistors promise to reduce the size and boost the efficiency of supplies that will run next-generation Artificial Intelligence (AI) platforms. In all the topologies with 48 VIN, the highest efficiency comes with using GaN devices. This is due to their lower capacitance and smaller size. With recent pricing declines in GaN power transistors, the cost comparison with silicon-based converters now strongly favors GaN in all the leading-edge solutions.

Power Electronic Tips
March, 2019
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Efficient Power Conversion (EPC) to Showcase Industry-Leading Performance in High Power Density DC-DC Conversion and Multiple High-Frequency Applications Using eGaN Technology at APEC 2019

Efficient Power Conversion (EPC) to Showcase Industry-Leading Performance in High Power Density DC-DC Conversion and Multiple High-Frequency Applications Using eGaN Technology at APEC 2019

EPC will exhibit live demonstrations showing how GaN technology’s superior performance is transforming power delivery for entire industries including computing, communications, and automotive.

EL SEGUNDO, Calif. — March 2019 — The EPC team will be delivering eleven technical presentations on gallium nitride (GaN) technology and applications at APEC 2019 in Anaheim, California from March 17th through the 21st. In addition, the company will demonstrate its latest eGaN FETs and ICs in customers’ end products that are enabled by eGaN technology.

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宜普電源轉換公司(EPC)的第十階段可靠性測試報告的亮點是 車規級氮化鎵元件超越AEC-Q101應力測試的認證標準

宜普電源轉換公司(EPC)的第十階段可靠性測試報告的亮點是 車規級氮化鎵元件超越AEC-Q101應力測試的認證標準

第一至第九階段可靠性測試報告後,EPC公司的第十階段可靠性測試報告進一步豐富知識庫。此報告對超過30,000個元件進行了超過1,800萬小時的應力測試後,沒有元件發生故障。在過去的兩年間,我們所付運的數百萬個元件沒有發生現場失效的情況。

宜普電源轉換公司(EPC)發佈第十階段可靠性測試報告,成功通過車規級AEC-Q101應力測試認證。AEC-Q101認證要求功率場效應電晶體符合最高的可靠性標準,不僅僅要求元件符合數據表內所載的條件而沒有發生故障,也同時要求在應力測試中,具有低漂移。請注意,EPC所採用的晶圓級晶片尺寸封裝(WLCSP)也符合所有針對傳統封裝的測試標準,展示出該封裝具備卓越性能之同時沒有影響到元件的穩固性或可靠性。

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Efficient Power Conversion (EPC) to Sponsor Inaugural ‘GaN Con’ with Yole Développement (Yole) and SEMI Covering the Entire Power GaN Industry from Manufacturers to End Users

Efficient Power Conversion (EPC) to Sponsor Inaugural ‘GaN Con’ with Yole Développement (Yole) and SEMI Covering the Entire Power GaN Industry from Manufacturers to End Users

In this conference GaN market and technology status will be addressed and its future evolution will be debated by mixing visions from designers, manufacturers, and end users.

EL SEGUNDO, Calif. — January 2019 — Efficient Power Conversion (EPC) is joining forces with Yole Développement (Yole) and SEMI to sponsor the first ever ‘GaN Con,’ an industry networking event covering the entire power GaN industry from manufacturers to end users. The theme of GaN Con is “Power GaN: From promises to possible market explosion” and is focused on the emerging GaN market and the state-of-the-art for its underlying technology.

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為什麼採用氮化鎵元件?

為什麼採用氮化鎵元件?

氮化鎵技術已經成熟至可以挑戰傳統的矽技術。從2010年起,商用的低壓矽基氮化鎵功率元件實現了很多全新應用。具備高速開關性能的氮化鎵元件也推動了全新市場的出現,例如雷射雷達、波峰追蹤及無線電源市場。這些全新應用有助供應鏈的開發、實現低製造成本及良好的元件可靠性記錄。這一切對於比較保守的DC/DC轉換器、AC/DC轉換器及車載應用的設計工程師來說,是很好的理據,是時候開始對氮化鎵元件進行評了。本文探討加快採納氮化鎵元件的各項因素。

Electronics Weekly
2019年1月
文章連結

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車規級eGaN FET使得雷射雷達系統看到更清晰、更高效, 並且降低48 V車用功率系統的成本

車規級eGaN FET使得雷射雷達系統看到更清晰、更高效, 並且降低48 V車用功率系統的成本

宜普電源轉換公司(EPC)進一步擴大車規級氮化鎵產品系列 -- 再多兩個產品成功通過國際汽車電子協會所制定的AEC Q101離散式元件應力測試認證。

宜普電源轉換公司(EPC)宣佈再多兩個車用氮化鎵(eGaN)元件成功通過AEC Q101測試認證,可在車用及其他嚴峻環境支持多種全新應用。EPC2206EPC2212是採用晶圓級晶片規模封裝(WLCS) 、分別是80 VDS 和100 VDS的離散電晶體。

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EPC擴大亞洲團隊,針對客戶解決方案釋放創新力量

EPC擴大亞洲團隊,針對客戶解決方案釋放創新力量

作為為支持DC/DC、雷射雷達(LiDAR)、無線電源應用等方面不斷擴大的客戶群進行擴展的一部分,宜普電源轉換公司(EPC)擴大了其在亞洲的團隊,增加的新成員將與整個亞太地區21個地區的客戶保持密切聯繫。

2018年11月28日— 為了支援在亞太地區正在加速的銷售增長,宜普電源轉換公司(EPC)宣佈擴大亞太地區的銷售和FAE團隊,以支援其不斷擴大的客戶群,積極獲取全新的業務發展及抓緊全新的市場商機。

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Gallium nitride is the silicon of the future

Gallium nitride is the silicon of the future

Last week, Anker debuted a tiny new power brick, crediting its small size with the component it uses instead of silicon: gallium nitride (GaN). It’s the latest example of the growing popularity of this transparent, glass-like material that could one day unseat silicon and cut energy use worldwide.

The Verge
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