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The Power and Evolution of GaN, Part 6: GaN Technology Adoption and Roadmap

The Power and Evolution of GaN, Part 6: GaN Technology Adoption and Roadmap

In the final installment of this series, how GaN has met the requirements to displace silicon is explored. As the adoption rate of GaN explodes, it is important to remember that, while GaN has made many advancements in just a few short years, it is still far from its theoretical performance limitations and thus there are profound improvements that can continue to be achieved. In time, the performance and cost advantages of GaN-on-silicon will result in a majority of applications currently using silicon-based devices converting to the smaller, faster, cheaper, and more reliable GaN technology.

Power Systems Design
February, 2019
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Efficient Power Conversion (EPC) to Sponsor Inaugural ‘GaN Con’ with Yole Développement (Yole) and SEMI Covering the Entire Power GaN Industry from Manufacturers to End Users

Efficient Power Conversion (EPC) to Sponsor Inaugural ‘GaN Con’ with Yole Développement (Yole) and SEMI Covering the Entire Power GaN Industry from Manufacturers to End Users

In this conference GaN market and technology status will be addressed and its future evolution will be debated by mixing visions from designers, manufacturers, and end users.

EL SEGUNDO, Calif. — January 2019 — Efficient Power Conversion (EPC) is joining forces with Yole Développement (Yole) and SEMI to sponsor the first ever ‘GaN Con,’ an industry networking event covering the entire power GaN industry from manufacturers to end users. The theme of GaN Con is “Power GaN: From promises to possible market explosion” and is focused on the emerging GaN market and the state-of-the-art for its underlying technology.

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GaN 的功率和演變- 第5部分:採用eGaN FET和積體電路構建低成本、高效的12 V - 1 V 負載點轉換器

GaN 的功率和演變- 第5部分:採用eGaN FET和積體電路構建低成本、高效的12 V - 1 V 負載點轉換器

氮化鎵元件對提升主流應用的效率的貢獻很大,例如在傳統矽基12 V - 1 V負載點 DC/DC轉換器。基於eGaN積體電路的12 V轉到1 V、12 A負載轉換器在5 MHz的頻率下,可以實現78%峰值效率及1000 W/in3 功率密度,而成本則低於每瓦0.2美元。

Power Systems Design
2019年1月
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氮化鎵的強大推動力及演進 - 第四章:eGaN FET和積體電路為手術用的機械人帶來精准的控制

氮化鎵的強大推動力及演進 - 第四章:eGaN FET和積體電路為手術用的機械人帶來精准的控制

本章討論由於低壓矽基氮化鎵(GaN)元件具備超快速的開關速度,因此實現了很多全新應用的出現。這些應用推動了行業的改革,例如面向全自動駕駛車輛的雷射雷達(lidar)、面向5G通信應用的波峰追蹤,以及家用和用於辦公室的大面積無線電源技術。此外,我們會探討氮化鎵功率元件如何為手術用的機械人帶來精准的控制,從而推動了醫療行業的最新發展。

Power Systems Design
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The Power and Evolution of GaN, Part 3: How to Build an Ultra-Fast High-Power Laser Driver using eGaN FETs - That Sees Farther, Better, and at a Lower Cost!

The Power and Evolution of GaN, Part 3: How to Build an Ultra-Fast High-Power Laser Driver using eGaN FETs - That Sees Farther, Better, and at a Lower Cost!

In the first article in this series, how gallium nitride (GaN)-on-silicon low voltage power devices have enabled many new applications, such as light detection and ranging (LiDAR), envelope tracking, and wireless power was discussed. In this article, more detail on one of these leading applications, LiDAR, will be explored. How GaN is being used to make LiDAR systems that see farther, with higher resolution, and at lower cost will be shown.

Power Systems Design
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Gallium nitride is the silicon of the future

Gallium nitride is the silicon of the future

Last week, Anker debuted a tiny new power brick, crediting its small size with the component it uses instead of silicon: gallium nitride (GaN). It’s the latest example of the growing popularity of this transparent, glass-like material that could one day unseat silicon and cut energy use worldwide.

The Verge
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基氮化鎵功率元件如何把矽基功率MOSFET逐出?

基氮化鎵功率元件如何把矽基功率MOSFET逐出?

專為高效電源轉換而設的氮化鎵功率電晶體已經投產7年多了。全新的市場例如雷射雷達、波峰追蹤及無線電源,都成為氮化鎵的新興市場,因為氮化鎵具備超高速的的開關速度。這些市場使得氮化鎵產品得以量產、成本更低及具備優越的可靠性。這些優勢為比較保守的設計工程師提供更大的利好條件,因此,DC/DC轉換器工程師、AC/DC轉換器及車載應用工程師都開始對氮化鎵器件進行評估。要把120億美元的矽基MOSFET市場轉為氮化鎵市場,還有什麼壁壘呢?就是信心的問題。設計工程師、製造工程師、採購經理及管理層都必需對氮化鎵技術的優勢有足夠的信心、相信氮化鎵技術可以解決設計師對採用全新技術的風險的疑問。讓我們看看3個主要構成風險的因素:供應鏈、成本及產品的可靠性。

IEEE Spectrum
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氮化鎵的雷霆威力及演變

氮化鎵的雷霆威力及演變

從2010年開始,自矽基氮化鎵(GaN)電晶體商用化後,低壓氮化鎵電晶體推動了很多全新應用的發展。氮化鎵元件具備超快速開關,推動全新市場諸如雷射雷達、波峰追蹤及無線電源市場的出現。這些全新應用進一步實現更強大的供應鏈、低製造成本及元件前所未有的高可靠性。這些優勢使得比較保守的設計工程師在DC/DC轉換器、AC/DC轉換器及車載等各種應用開始對氮化鎵元件進行評估。在本文章系列,我們將討論多種發揮氮化鎵元件優勢的應用,實現最終產品差異化的競爭優勢。首先,我們會探討是甚麼因素加快了氮化鎵元件的普及。

Power Systems Design
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The Growing Ecosystem for eGaN FET Power Conversion

The Growing Ecosystem for eGaN FET Power Conversion

In recent years, GaN-based power conversion has increased in popularity due to the inherent benefits of eGaN FETs over conventional Si transistors. Migrating a converter design from Si to GaN offers many system-level improvements, which require consideration of all the components in that system. This trend has subsequently spurred a growth in the ecosystem of power electronics that support GaN-based designs.

Power Systems Designs
By Edward A. Jones, Michael de Rooij, and David Reusch
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The New "Silicon" of Silicon Valley

The New "Silicon" of Silicon Valley

EPC CEO & Co-Founder, Alex Lidow was a featured guest on Cheddar TV sharing how GaN technology is enabling new and disruptive technologies, such as LiDAR for self-driving cars and power conversion transistors and ICs for wide-area wireless power and medtech.

Cheddar
September 11, 2017
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功率晶片 – 但是,跟我們所認識的不一樣了

功率晶片 – 但是,跟我們所認識的不一樣了

Max Smolaks歡迎於電源鏈(power chain)即將替代矽材料的全新氮化鎵材料。

在過去的35年裡,電源供電一直採用功率金屬氧化物半導體場效應電晶體(MOSFET) –利用電壓受控的矽元件進行開關及利用電場允許或阻止電流的流通。

Data Center Dynamics
2017年4月19日
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矽元件的競爭對手悄悄走進面向Apple、Google及Tesla的半導體市場

矽元件的競爭對手悄悄走進面向Apple、Google及Tesla的半導體市場

人們用矽材料命名了“矽谷”,而矽材料現正面對全新並具有潛力的競爭對手 - 氮化鎵(GaN)材料。有說氮化鎵元件可以取得300億美元的半導體電源供應產業的市場份額。這個市場涵蓋了所有利用牆上的電源插座取得電源的產品—從Apple(AAPL)的iPhone充電器,以至Tesla(TSLA)的豪華電動汽車。

Investor's Business Daily
Allison Gatlin
2016年7月
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A Silicon Pioneer Plays Taps for Silicon and Power Cords

A Silicon Pioneer Plays Taps for Silicon and Power Cords

Tuesday I was fortunate enough to have a meeting with Alex Lidow, founder of chip company EPC of El Segundo, California, and something of an luminary of the chip world. Lidow came up with the “power MOSFET,” a device that went on to be the basis of billions in semiconductor sales, in 1977.

His new company, whose initials stand for “Efficient Power Conversion,” proposes replacing silicon, the original basis of the MOSFET, and one of the most prevalent types of semiconductor around, with a different material, Gallium Nitride, commonly abbreviated as GaN — or “eGaN,” as Lidow calls the company’s new, improved form of GaN.

Barron's
Tiernan Ray
June 29, 2016
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eGaN vs. Silicon - Comparing Dead-time Losses for eGaN FETs and Silicon MOSFETs in Synchronous Rectifiers

eGaN vs. Silicon - Comparing Dead-time Losses for eGaN FETs and Silicon MOSFETs in Synchronous Rectifiers

There have been several comparisons of eGaN FETs with silicon MOSFETs in a variety of applications, including hard-switched, soft-switched, and high-frequency power conversion. These studies have shown that eGaN FETs have large efficiency and power density advantages over silicon MOSFETs. Here we’ll focus on the use of eGaN FETs in synchronous rectifier (SR) applications and the importance of dead-time management. We show that eGaN FETs can dramatically reduce loss due to dead-time in synchronous rectifiers above and beyond the benefits of low RDS(on)and charge.

Power Systems Design
By: Dr. John Glaser & Dr. David Reusch, Efficient Power Conversion
June 13, 2016
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Raytheon's work on gallium nitride semiconductors could have a reach beyond radars

Raytheon's work on gallium nitride semiconductors could have a reach beyond radars

ANDOVER, Mass.—At the front door of Raytheon's Integrated Air Defense Center, there's a reminder of how big microwave electronics used to be—the original microwave oven. The now ever-present kitchen device was invented after a Raytheon engineer discovered his candy bar melted while he was standing near a magnetron used in a radar system the company was developing. Nearly the size of a refrigerator, the original microwave looks like it would cook a whole lot more than whatever was put within its metal grate, which was meant to contain the microwaves from its magnetron.

Ars Technica
June 9, 2016
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