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由於基於氮化鎵的功率器件擁有龐大市場潛力，因此吸引更多全新供應商生產該器件，致使製造商的數量正穩步增加。
網上雜誌：How2Power
日期：２０１３年6月
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在EEWeb Pulse 訪問裡，宜普公司首席執行長Alex Lidow討論如何推動氮化鎵器件的廣泛應用。
EEWeb Pulse
日期：2013年6月
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雜誌：Bodo's Power Systems
作者：Steve Soffels, Denis Marcon, and Stefaan Decoutere （IMEC）
日期： 1/2/2013
摘要：在功率電子行業中，氮化鎵技術從小眾、專業市場擴展。第一代氮化鎵電晶體 現正擴大其在功率電子市場的份額。
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作者 :Ashok Bindra
雜誌 :How2Power Today (2012年12月刊)
在過去的數年間雖然有很多討論關於基於氮化鎵的功率電晶體可以替代普遍使用的矽MOSFET器件，但矽基氮化鎵的功率場效應電晶體可能需要較長的時間才可以在電源轉換領域成為主流器件。目前數個全新應用的出現將有望實現氮化鎵技術所提供的優勢。除了具備商用及高可靠性的條件，氮化鎵器件的獨有特性正在促進全新應用的出現。
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作者：宜普公司首席執行長Alex Lidow博士
日期：在2012年7月2日刊載於Power Pulse.NET網站
大約在2005年Eudyna 與Nitronex首次推出耗盡型射頻電晶體時，氮化鎵電晶體已經出現。之後有很多新的公司加入引進射頻電晶體（如RFMD, Triquint, Cree, 飛思卡爾, Integra, HRL, M/A-COM及其它公司)，以及在電源轉換應用為替代功率MOSFET而設計的電晶體（如Transphorm, 國際整流器公司, GaN Systems, microGaN及宜普電源轉換公司）。本論文主要在討論這個熱鬧的科研現象是代表氮化鎵電晶體已經準備好替代功率MOSFET嗎？如果是，原因是什麼呢？
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The GaN power device industry has probably generated less than $2.5M revenues in 2011, as only 2 companies (IRF & EPC Corp.) are selling products on the open market. However, the overall GaN activity has seen extra revenues as R&D contracts, qualification tests and sampling for qualified customers was extremely buoyant.
http://www.news10.com/story/17735484/power-gan-2012?clienttype=printable
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eGaN® FET 的高性能正在更快地被DC/DC 電源轉換、負載點轉換器、D類音訊放大器及高頻電路等應用採用,而TI推出業界首款100V半橋GaN FET驅動器(LM5113),經過優化,配合氮化鎵場效應電晶體使用,則更進一步推動eGaN FET在高性能電信、網路以及數據通信中心的應用。
詳情請瀏覽:
電子設計技術(2012年4月書刊)
EDN 電子雜誌2012年第04期
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Written by Peter Clarke - 3/7/2012 2:20 PM EST
LONDON - The market for power devices implemented in gallium nitride was less than $2.5 million in 2011, according to market research firm Yole Developpement (Lyon, France). However, there is a great deal of R&D activity and Yole sees the power GaN market growing to nearly $0 million in 2012 and $500 million in 2016.
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Gallium nitride has long been known to have useful properties when it comes to electronic components. Even so, its application has largely been confined to more exotic areas of the industry, particularly rf transistors.
But GaN is beginning to find application in what could be considered the mainstream, with some of its proponents suggesting its arrival could mark the beginning of the end for the traditional power mosfet.
By: Graham Pitcher
New Electronics
December 13, 2011
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Wide-bandgap materials, such as GaN and SiC, are enabling a new generation of power switching devices that switch faster and with fewer losses than the venerable silicon MOSFET, resulting in smaller, more efficient power supplies.
By Margery Conner
EDN
August 25, 2011
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Alex Lidow is interviewed by ECN's Editorial Director, Alix Paultre, on the Tinker's Toolbox, ECN's audio interview website. The interview explores the attributes of GaN technology, applications opened as a result of GaN's superior performance to MOSFETs and reasons for the take-up of eGaN FET products over the past year.
Listen to Interview
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The latest report from Yole Développement “GaN Technologies for Power Electronics Applications: Industry and Market Status & Forecasts” says the Total Accessible Market is $16.6b and is envisioned to be split into Power ICs, Power Discretes and Power Modules.
Compound Semiconductor
October 28, 2010
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The weather was perfect in Chi-town at the Darnell Power Forum but the technologies were hot including a talk by Alex Lidow CEO of Efficient Power Conversion Corp., who discussed why the power industry should consider GaN for improving performance.
By Paul O’Shea
EEBEAT
September 14, 2010
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Due to its advantages GaN will probably become the dominant technology. GaN has a much higher critical electric field than silicon which enables this new class of devices to withstand much greater voltage from drain to source with much less penalty in on-resistance.
By Alex Lidow, PhD
Bodo’s Power Systems
June, 2010
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