Gallium nitride (GaN) transistors have been in mass production for over 10 years. In their first few years of availability, the fast switching speed of the new devices – up to 10 times faster than the venerable Si MOSFET – was the main reason for designers to use GaN FETs. As the pricing of GaN devices normalized with the MOSFET, coupled with the expansion of a broad range of devices with different voltage ratings and power handling capabilities, much wider acceptance was realized in mainstream applications such as DC-DC converters for computers, motor drives for robots, and e-mobility bikes and scooters. The experience gained from the early adopters has led the way for later entrants into the GaN world get into production faster. This article is the first in a series of articles discussing three topics that can help power systems designers achieve the most out of their GaN-based designs at the lowest cost. The three topics are: (1) layout considerations; (2) thermal design for maximum power handling; and, (3) EMI reduction techniques for lowest cost.

Bodo’s Power Systems
January, 2021
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EPC introduces the 40 V, 3 milliohm EPC2055 eGaN^® FET, offering designers a device that is smaller, more efficient, and more reliable than currently available devices for high performance, space-constrained applications.

EL SEGUNDO, Calif. — December 2020 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2055 (3 mΩ, 40 V) eGaN FET. 

面向高功率密度和低成本的DC/DC轉換，EPC9151功率模組利用EPC2152 ePower™功率級實現性能更高和尺寸更小的解決方案。

宜普電源轉換公司（EPC）宣佈推出EPC9151，这是一款300 W、雙向、超小尺寸的1/16磚型DC/DC降壓轉換器模組，其尺寸僅為33 mm x 22.9 mm (1.3”x 0.9”)。EPC9151採用Microchip公司的數位信號控制器（dsPIC33CK）和EPC公司的 ePower™ 功率級集成电路（EPC2152），於300 W、48 V/12 V的轉換器中，可以實現95％以上的效率，而且可以在這個可擴展的兩相設計中增加相數，使得功率可以更高。

新一代200 V 氮化鎵場效應電晶體（eGaN^® FET）是48 V_OUT同步整流、D類音訊放大器、太陽能微型逆變器和功率優化器，以及多電平、高壓AC / DC轉換器的理想功率元件。

增強型矽基氮化鎵（eGaN）功率場效應電晶體和積體電路的全球領導廠商宜普電源轉換公司（EPC）最新推出的兩款200 V eGaN FET（EPC2215和EPC2207 ），性能更高而同時成本更低，目前已有供貨。採用這些領先氮化鎵元件的應用十分廣闊，包括D類音訊放大器、同步整流器、太陽能最大功率點追蹤器（MPPT）、DC/DC轉換器（硬開關和諧振式），以及多電平高壓轉換器。

美國微芯科技公司（Microchip Technology Inc.）的數位信號控制器（DSC）與宜普電源轉換公司（EPC）的超高效氮化鎵場效應電晶體（eGaN^®FET）的結合，可實現最佳功率密度（730 W/in³），從而實現高效、低成本的DC-DC轉換。

EPC公司宣佈推出1/16磚式、300 W DC/DC穩压器（EPC9143）。 EPC9143功率模組把Microchip dsPIC33CK數位信號控制器（DSC）和最新一代eGaN FET（EPC2053）集成在一起，實現25 A、48 V/12 V和96％效率的功率轉換。

EPC9144演示板內的車規級EPC2216氮化鎵場效應電晶體（eGaN^® FET）可支援大電流納秒脈衝的應用，提供高速的大電流脈衝 – 電流可高達28 A、脈寬则可低至1.2納秒，從而使得飛行時間及flash雷射雷達系統更準確、更精確及更快速。

宜普電源轉換公司（EPC）宣佈推出15 V、28 A大電流脈衝雷射二極體驅動電路板（EPC9144）。

In support of a widening customer base in Europe, Efficient Power Conversion Corporation has expanded its technical leadership team to assist customers in the adoption of eGaN^® FETs and Integrated circuits for applications including DC-DC, Lidar, motor control, and beyond.

EL SEGUNDO, Calif. — October, 2019 — To support its accelerating design activity, and to provide local technical support to EPC’s customers in Europe, Efficient Power Conversion Corporation (EPC) is proud to announce that Marco Palma, a seasoned expert, has joined the EPC technical leadership team as Senior FAE Manager for Europe. 

GaN transistors, with favorable figures of merit (FOM) for 48 V applications, can provide a reduction in size, weight, and bill of material costs. This article presents a five-phase, fully regulated, bidirectional 48 V to 12 V DC-DC converter. An advancedthermalmanagement solution suitable for use with eGaN FETs results in a system that can provide 3kW of power at an efficiency exceeding 97.5% into a 14.5 V battery.

Power Systems Design
July, 2019
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為了使得客戶易於集成功率系統，宜普電源轉換公司（EPC）為客戶提供領導業界的氮化鎵功率元件的晶圓。

EPC公司宣佈推出領導業界的增強型氮化鎵元件的晶圓，使得客戶易於集成功率系統。EPC公司的氮化鎵場效應電晶體（eGaN^® FET）及積體電路一直以來都是以單個並包含錫條或錫球的晶片級元件出售。

宜普電源轉換公司（EPC）進一步擴大車規級氮化鎵產品系列 -- 全新成員是面向具有高解析度的雷射雷達系統、80 V的EPC2214氮化鎵場效應電晶體，該元件成功通過國際汽車電子協會所制定的AEC Q101應力測試認證。

宜普電源轉換公司（EPC）宣佈再多一個車用氮化鎵(eGaN)元件（80 V的EPC2214）成功通過AEC Q101測試認證，可在車用及其他嚴峻環境支持多種全新應用。

EPC will exhibit live demonstrations showing how GaN technology’s superior performance is transforming power delivery for entire industries including computing, communications, and automotive.

EL SEGUNDO, Calif. — March 2019 — The EPC team will be delivering eleven technical presentations on gallium nitride (GaN) technology and applications at APEC 2019 in Anaheim, California from March 17^th through the 21^st. In addition, the company will demonstrate its latest eGaN FETs and ICs in customers’ end products that are enabled by eGaN technology.

繼第一至第九階段可靠性測試報告後，EPC公司的第十階段可靠性測試報告進一步豐富知識庫。此報告對超過30,000個元件進行了超過1,800萬小時的應力測試後，沒有元件發生故障。在過去的兩年間，我們所付運的數百萬個元件沒有發生現場失效的情況。

宜普電源轉換公司（EPC）發佈第十階段可靠性測試報告，成功通過車規級AEC-Q101應力測試認證。AEC-Q101認證要求功率場效應電晶體符合最高的可靠性標準，不僅僅要求元件符合數據表內所載的條件而沒有發生故障，也同時要求在應力測試中，具有低漂移。請注意，EPC所採用的晶圓級晶片尺寸封裝（WLCSP）也符合所有針對傳統封裝的測試標準，展示出該封裝具備卓越性能之同時沒有影響到元件的穩固性或可靠性。

In this conference GaN market and technology status will be addressed and its future evolution will be debated by mixing visions from designers, manufacturers, and end users.

EL SEGUNDO, Calif. — January 2019 — Efficient Power Conversion (EPC) is joining forces with Yole Développement (Yole) and SEMI to sponsor the first ever ‘GaN Con,’ an industry networking event covering the entire power GaN industry from manufacturers to end users. The theme of GaN Con is “Power GaN: From promises to possible market explosion” and is focused on the emerging GaN market and the state-of-the-art for its underlying technology.

作為為支持DC/DC、雷射雷達（LiDAR）、無線電源應用等方面不斷擴大的客戶群進行擴展的一部分，宜普電源轉換公司（EPC）擴大了其在亞洲的團隊，增加的新成員將與整個亞太地區21個地區的客戶保持密切聯繫。

2018年11月28日— 為了支援在亞太地區正在加速的銷售增長，宜普電源轉換公司（EPC）宣佈擴大亞太地區的銷售和FAE團隊，以支援其不斷擴大的客戶群，積極獲取全新的業務發展及抓緊全新的市場商機。