EPC公司爲電源系統設計工程師提供全新的100 V、23 mΩ 功率電晶體（EPC2070），它採用微型芯片級封裝並提供34 Ａ脉衝電流，非常適合 60 W、48 V 電源轉換器、光達和 LED 照明等應用。

宜普電源轉換公司(EPC)宣佈推出100 V的氮化鎵電晶體（EPC2070），具有23 mΩ 的最大導通阻抗和34 A脉衝輸出電流，可在細小的1.1 mm²佔板面積實現高效功率轉換。

Today, the permanent magnet motor, also known as DC brushless motor (BLDC), is widely used and offers higher torque capability per cubic inch and higher dynamics when compared to other motors. So far, silicon-based power devices have been dominant in the inverter electronics, but today their performance is nearing their theoretical limits. There is an increasing need for higher power density. Gallium nitride (GaN) transistors and ICs have the best attributes to satisfy these needs.

Power Systems Design
November, 2021
Read article

November 3, 2021 - Efficient Power Conversion Corporation (EPC), the world’s leader in enhancement-mode gallium nitride on silicon (eGaN^®) power FETs and ICs, has won the Product of the Year 2021 – Power Semiconductor/Driver IC of the prestigious World Electronics Achievement Awards (WEAA) for EPC21601 eToF™ Laser Driver IC.

The WEAA scheme honors products that have made outstanding contributions to the innovation and development of the electronics industry worldwide. A committee comprising of ASPENCORE global senior industry analysts and online users worldwide select the winners. ASPENCORE is the largest electronics industry media and SaaS group in the world featuring media titles including EE Times and EDN.

As the outer reaches of the Earth’s atmosphere and space are opened to commercial development, motors will become increasingly important to systems places there for various functions. With the inevitability of manufacturing in space, motors – including their drivers – will take on even more functions. Of equal importance will be the motor drivers selected to drive those motors efficiently and reliably.

Components in Electronics
October, 2021
Read article

EPC9163是一款兩相48 V/12 V雙向轉換器，可提供2 kW的功率和實現96.5%的效率，是適用於輕度混合動力汽車和備用電池裝置的小型化解決方案。

宜普電源轉換公司（EPC）宣佈推出EPC9163，這是一款 2 kW、兩相的48 V /12 V雙向轉換器演示板，可在非常小的佔板面積上實現96.5%的效率。該演示板的設計具有可擴展性 – 並聯兩個轉換器可以實現4 kW的功率，或者並聯三個轉換器以實現6 kW。該板採用8個100 V 的eGaN^® FET（EPC2218），並由模塊控制，該模塊採用Microchip公司的dsPIC33CK256MP503 16位數位控制器。

EPC推出了40 V、1.3 mΩ的氮化鎵場效應電晶體 （eGaN^® FET），元件型號爲EPC2067，專爲設計人員而設。EPC2067比MOSFET更小、更高效、更可靠，適用於高性能且空間受限的應用。

宜普電源轉換公司（EPC）是增强型矽基氮化鎵功率電晶體和積體電路的全球領導者。新推的EPC2067（典型值爲 1.3 mΩ、40 V）擴大了可選的低壓元件，可立即供貨。

50 W、12 V/60 V且基於eGaN^® FET的同步升壓轉換器採用簡單、低成本的拓樸結構，可實現 95.3%的峰值效率和低温升。

宜普電源轉換公司（EPC）宣佈推出雙向降壓或反向升壓轉換器演示板（EPC9162）。該演示板用於同步轉換器時採用100 V的EPC2052元件，以及用於同步自舉FET電路時，採用EPC2038元件。

The design of an LLC resonant converter illustrates how eGaN FETs can shrink the physical size of modern supply circuitry.

Power Electronic Tips
October, 2021
Read article

GaN devices and applications, such as lidar, DC-DC conversion, motor drive, and low-cost satellites using gallium nitride FETs and ICs, form the focus of this book, GaN Power Devices and Applications.

EL SEGUNDO, Calif. — October 2021 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, announces the publication of a valuable learning resource for professional engineers, systems designers, and electrical engineering students seeking the latest information on gallium nitride technology and applications. 

GaN transistors and ICs increase power density in motor drive applications. An optimal lay-out approach allows obtaining ring-free output switching waveforms and clean current reconstruction signals either from leg shunts or from in-phase shunts.

EEPower
October, 2021
Read article

The new gallium nitride (GaN) family aims to deliver time-of-flight (ToF) applications for autonomous cars and 3D sensing across the consumer and industrial sectors. In an interview with EE Times, Alex Lidow, CEO at EPC, highlighted how introducing the eToF Laser Driver family’s for LiDAR system design at a low cost competes with the Mosfet when it comes to LiDAR applications.

EEWeb
September, 2021
Read article

EL SEGUNDO, Calif. — September 2021 — Idle power consumption and overall efficiency were key concerns of innosonix GmBH when designing its latest high-end Maxx Series multi-channel power amplifier. By changing from traditional silicon FETs to EPC’s EPC2059 eGaN FET the company reduced idle loss by 35% and lowered the on resistance to increase the total power efficiency by 5%.

The EPC2059 is a 6.8 mΩ, 170 V enhancement-mode gallium nitride (eGaN) transistor offering superior audio performance for high-end amplifier applications. The low on resistance and low capacitance of the EPC2059 enables high efficiency and lowers open loop impedance for low Transient Intermodulation Distortion (T-IMD). The fast-switching capability and zero reverse recovery charge enable higher output linearity and low cross over distortion for lower Total Harmonic Distortion (THD).

Gallium nitride (GaN) power semiconductors allow for innovation in the harsh radiation environments of space applications.

Electronics Weekly
September, 2021
Read article

Unlike silicon, whereby specific manufacturing processes and packaging are required to insulate semiconductors from the effects of radiation, GaN devices are largely resistant to the damage caused by space radiation due to their physical characteristics and structure. In an interview with Alex Lidow, CEO at EPC, Power Electronic News have discovered the features of GaN for space applications.

Power Electronics News
September, 2021
Read article

EPC 推出了 40 V、1.6 mΩ的氮化鎵場效應電晶體 （eGaN^®FET），元件型號為EPC2069，專爲設計人員而設，EPC2069比目前市場上可選的元件更小、更高效、更可靠，適用於高性能且空間受限的應用。

宜普電源轉換公司（EPC）是增强型矽基氮化鎵 (eGaN)功率電晶體和集成電路的全球領導者。新推的EPC2069（典型值爲 1.6 mΩ、40 V）是更高性能的低壓元件，可立即供貨。

在過去十年中，計算機、顯示器、智能手機和其他消費電子系統變得更薄，同時功能也變得更强大。因此，市場對具有更高功率密度的更薄電源解决方案的需求不斷增加。本文研究了額定功率爲 250 W、超薄的48 V / 20 V轉換器，它可以採用各種非隔離型 DC/DC 降壓拓撲的可行性。我們研究了各種非隔離型拓撲的優缺點，從而瞭解拓撲如何影響功率電晶體和磁性元件的選擇，特別是電感器，因爲這兩個元件產生轉換器的大部分損耗。本文還詳細分析了爲這些應用設計薄型電感器所面對的挑戰，包括電感器損耗的因素、電感器尺寸和設計權衡，包括對EMI的影響。我們是以選擇、構建和測試了超薄多電平轉換器拓撲。從該轉換器獲得的實驗結果，用於進一步優化操作設置和元件的選擇，從而實現超過98%的峰值效率。

EPC公司Michael de Rooij
Würth Elektronik 公司Quentin Laidebeur

IEEE Power Electronics Magazine
2021年９月
(必需訂閱才能下載文章)
閱讀文章

隨著數據處理基礎設施的持續快速增長，市場要求在最小的佔板面積內提供更高的功率。

Power Systems Design
2021年9月
閱讀文章

隨著採用氮化鎵（GaN）元件的應用越來越多，Bodo Arlt 借此機會與 EPC公司的首席執行長兼共同創辦人 Alex Lidow 談及他認爲這種不斷發展的技術的下一個重點市場。

Bodo’s Power Systems
2021 年 9 月
閱讀文章

由 Bodo Power Systems 主辦的氮化鎵行業專家圓桌會議的嘉賓包括：

1. EPC公司的首席執行長兼共同創始人Alex Lidow
2. Power Integrations公司的市場行銷與應用工程副總裁Doug Bailey
3. Nexperia 公司的氮化鎵功率技術行銷戰略總監Dilder Chowdhury
4. Navitas Semiconductor公司的市場行銷戰略高級總監Tom Ribarich

根據將氮化鎵和碳化矽材料的電子從價帶轉移到導帶所需的能量，氮化鎵和碳化矽元件被指定爲寬帶隙 (WBG) 半導體——碳化矽元件約爲 3.2 eV，氮化鎵元件則約爲 3.4 eV，而矽元件只有1.1 eV 。WBG 的擊穿電壓更高，在某些應用中可以達到 1,700 V。 在今年 5 月舉行的綫上PCIM Europe展會上，幾家公司展示了他們在 氮化鎵和碳化矽技術方面的最新創新，並且就 WBG 技術的發展方向分享了其獨特見解。

EE Times – Europe
2021 年 7 月
閱讀文章