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50 W、12 V/60 V且基於eGaN® FET的同步升壓轉換器採用簡單、低成本的拓樸結構,可實現 95.3%的峰值效率和低温升。
宜普電源轉換公司(EPC)宣佈推出雙向降壓或反向升壓轉換器演示板(EPC9162)。該演示板用於同步轉換器時採用100 V的EPC2052元件,以及用於同步自舉FET電路時,採用EPC2038元件。
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This month has been a busy one in the FET space. Here are a few FETs from EPC, UnitedSiC, and Intel that depart from traditional silicon transistors in interesting ways.
All About Circuits
October, 2021
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The design of an LLC resonant converter illustrates how eGaN FETs can shrink the physical size of modern supply circuitry.
Power Electronic Tips
October, 2021
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GaN devices and applications, such as lidar, DC-DC conversion, motor drive, and low-cost satellites using gallium nitride FETs and ICs, form the focus of this book, GaN Power Devices and Applications.
EL SEGUNDO, Calif. — October 2021 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, announces the publication of a valuable learning resource for professional engineers, systems designers, and electrical engineering students seeking the latest information on gallium nitride technology and applications.
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GaN transistors and ICs increase power density in motor drive applications. An optimal lay-out approach allows obtaining ring-free output switching waveforms and clean current reconstruction signals either from leg shunts or from in-phase shunts.
EEPower
October, 2021
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The new gallium nitride (GaN) family aims to deliver time-of-flight (ToF) applications for autonomous cars and 3D sensing across the consumer and industrial sectors. In an interview with EE Times, Alex Lidow, CEO at EPC, highlighted how introducing the eToF Laser Driver family’s for LiDAR system design at a low cost competes with the Mosfet when it comes to LiDAR applications.
EEWeb
September, 2021
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EL SEGUNDO, Calif. — September 2021 — Idle power consumption and overall efficiency were key concerns of innosonix GmBH when designing its latest high-end Maxx Series multi-channel power amplifier. By changing from traditional silicon FETs to EPC’s EPC2059 eGaN FET the company reduced idle loss by 35% and lowered the on resistance to increase the total power efficiency by 5%.
The EPC2059 is a 6.8 mΩ, 170 V enhancement-mode gallium nitride (eGaN) transistor offering superior audio performance for high-end amplifier applications. The low on resistance and low capacitance of the EPC2059 enables high efficiency and lowers open loop impedance for low Transient Intermodulation Distortion (T-IMD). The fast-switching capability and zero reverse recovery charge enable higher output linearity and low cross over distortion for lower Total Harmonic Distortion (THD).
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Gallium nitride (GaN) power semiconductors allow for innovation in the harsh radiation environments of space applications.
Electronics Weekly
September, 2021
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Unlike silicon, whereby specific manufacturing processes and packaging are required to insulate semiconductors from the effects of radiation, GaN devices are largely resistant to the damage caused by space radiation due to their physical characteristics and structure. In an interview with Alex Lidow, CEO at EPC, Power Electronic News have discovered the features of GaN for space applications.
Power Electronics News
September, 2021
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EPC 推出了 40 V、1.6 mΩ的氮化鎵場效應電晶體 (eGaN®FET),元件型號為EPC2069,專爲設計人員而設,EPC2069比目前市場上可選的元件更小、更高效、更可靠,適用於高性能且空間受限的應用。
宜普電源轉換公司(EPC)是增强型矽基氮化鎵 (eGaN)功率電晶體和集成電路的全球領導者。新推的EPC2069(典型值爲 1.6 mΩ、40 V)是更高性能的低壓元件,可立即供貨。
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在過去十年中,計算機、顯示器、智能手機和其他消費電子系統變得更薄,同時功能也變得更强大。因此,市場對具有更高功率密度的更薄電源解决方案的需求不斷增加。本文研究了額定功率爲 250 W、超薄的48 V / 20 V轉換器,它可以採用各種非隔離型 DC/DC 降壓拓撲的可行性。我們研究了各種非隔離型拓撲的優缺點,從而瞭解拓撲如何影響功率電晶體和磁性元件的選擇,特別是電感器,因爲這兩個元件產生轉換器的大部分損耗。本文還詳細分析了爲這些應用設計薄型電感器所面對的挑戰,包括電感器損耗的因素、電感器尺寸和設計權衡,包括對EMI的影響。我們是以選擇、構建和測試了超薄多電平轉換器拓撲。從該轉換器獲得的實驗結果,用於進一步優化操作設置和元件的選擇,從而實現超過98%的峰值效率。
EPC公司Michael de Rooij
Würth Elektronik 公司Quentin Laidebeur
IEEE Power Electronics Magazine
2021年9月
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隨著數據處理基礎設施的持續快速增長,市場要求在最小的佔板面積內提供更高的功率。
Power Systems Design
2021年9月
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隨著採用氮化鎵(GaN)元件的應用越來越多,Bodo Arlt 借此機會與 EPC公司的首席執行長兼共同創辦人 Alex Lidow 談及他認爲這種不斷發展的技術的下一個重點市場。
Bodo’s Power Systems
2021 年 9 月
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由 Bodo Power Systems 主辦的氮化鎵行業專家圓桌會議的嘉賓包括:
- EPC公司的首席執行長兼共同創始人Alex Lidow
- Power Integrations公司的市場行銷與應用工程副總裁Doug Bailey
- Nexperia 公司的氮化鎵功率技術行銷戰略總監Dilder Chowdhury
- Navitas Semiconductor公司的市場行銷戰略高級總監Tom Ribarich
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根據將氮化鎵和碳化矽材料的電子從價帶轉移到導帶所需的能量,氮化鎵和碳化矽元件被指定爲寬帶隙 (WBG) 半導體——碳化矽元件約爲 3.2 eV,氮化鎵元件則約爲 3.4 eV,而矽元件只有1.1 eV 。WBG 的擊穿電壓更高,在某些應用中可以達到 1,700 V。 在今年 5 月舉行的綫上PCIM Europe展會上,幾家公司展示了他們在 氮化鎵和碳化矽技術方面的最新創新,並且就 WBG 技術的發展方向分享了其獨特見解。
EE Times – Europe
2021 年 7 月
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航太應用的技術發展是 2021 年的重要組成部份,因此更多的抗輻射元件即將問世。 最近新推兩款新型場效應電晶體,它們給航太領域帶來了甚麽?
All About Circuits
2021 年 6 月
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這些新一代氮化鎵場效應電晶體(eGaN FET) 滿足了目前電動出行(eMobility)、交付和物流機器人,以及無人機市場所需的緊凑型 BLDC 電機驅動器和具成本效益、高解析度的飛行時間(ToF)的新需求。
宜普電源轉換公司(EPC)是增强型矽基氮化鎵 (eGaN) 功率電晶體和積體電路的全球領導者。新推的EPC2065 和 EPC2054具備更高的性能和更低的成本等優勢。
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Efficient Power Conversion (EPC) introduces a new family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high reliability environments.
EL SEGUNDO, Calif.— June 2021 — EPC announces the introduction of a new family of radiation-hardened gallium nitride transistors and integrated circuits. With higher breakdown strength, faster switching speed, higher thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices. The lower resistance and gate charge enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions. Gallium nitride is also inherently radiation tolerant, making GaN-based devices a reliable, higher performing power transistor option for space applications.
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氮化鎵電晶體和積體電路提高了馬達控制應用的功率密度。最佳佈局允許從橋臂分流器或同相分流器獲得沒有振鈴噪聲的輸出開關波形和“乾淨“的電流重建信號。
Bodo’s Power Systems
2021 年 6 月
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宜普電源轉換公司(EPC)宣佈推出新型EPC9149演示板。該板爲一款可提供1 kW功率的48 V输入、12 V输出的LLC轉換器,可作爲直流變壓器,轉換比爲4:1。EPC9149採用額定電壓爲100 V的EPC2218氮化鎵場效應電晶體(eGaN FET)和額定電壓爲40 V的EPC2024 。
EPC9149的尺寸是根據DOSA標準的1/8磚型,僅爲58.4 mm x 22.9 mm。輸出功率是1 kW時,EPC9149比基於硅元件的解決方案要小得多,後者的尺寸通常是1/4磚或大兩倍。不帶散熱器的轉換器的總厚度僅爲10 mm。爲了讓工程師能够輕鬆地複製這個设计,該電路板的所有設計資源,包括原理圖、物料清單和Gerber文件,都可以在EPC網站上找到。
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