Enhancement-mode gallium nitride (GaN) transistors have been commercially available for over five years. Commercially available GaN FETs are designed to be both higher performance and lower cost than state-of-the-art silicon-based power MOSFETs. This achievement marks the first time in 60 years that any technology rivals silicon both in terms of performance and cost, and signals the ultimate displacement of the venerable, but aging power MOSFET.

EDN
Alex Lidow
February 18, 2015

Bloomberg Business的Ashlee Vance 剖析宜普电源转换公司（EPC）的发展。一直以来，硅保留了它对半导体行业发展的影响力。在过去的60年里，晶体管所使用的半导体材料以硅为首选。晶体管就是细小的开关，它是驱动信息时代发展的动力。硅谷也以此材料而命名，而且许多公司藉着它打造出价值十亿元的王国。现在我们把眼光移离硅元素 -- 它最终有可能处于被取替的边缘。

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Bloomberg Business
2015年2月12日

从业界的观点来看，只有可以为人类提供效益及性能优势的技术才能够生存。 主流技术CMOS就是一直为业界提供无比的益处而得以长存。 当下的问题是CMOS技术将会变成夕阳产业吗？新兴的氮化镓技术终于能够打破阻碍氮化镓功率器件普及化的成本障碍。根据2015年DesignCon研讨会的主讲嘉宾所描述，氮化镓技术可推动宽泛范围的新兴应用的发展，包括从无线充电、全自动汽车以至更高效的移动通信等应用。

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EETimes Asia
2015年2月

60年以來业界首次见证全新的半导体技术以更低的成本制造出比硅器件具备更高的性能的晶体管。氮化镓（GaN）技术展示了它显著提升了晶体管的性能之外，氮化镓器件的制造成本比硅器件可以更低。由于氮化镓晶体管具备快速开关特性，在高压及大电流工作时它比任何前代的晶体管都更为优越，支持开发全新的应用。这些特性非常优越，可推动全新并改写未来的应用的出现。但是氮化镓技术的发展还是刚刚开始，它的发展前景将无可限量。

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EDN杂志
作者：Alex Lidow
2015年1月

In this installment of the ‘How to GaN’ series we will discuss the 4th generation of eGaN FETs in 48 VIN applications and evaluate the thermal performance of the chipscale packaging of high voltage lateral eGaN FETs.

EEWeb
By: Alex Lidow
December, 2014

Technics is back. Panasonic has unveiled the first new hi-fi products from the highly-regarded brand in 6 years. The new Reference Class system is made up of three components – a stereo power amp, a network audio control player and a speaker system. The amp uses a JENO Digital Engine to eliminate jitter and nip noise in the bud, and Load Adaptive Phase Calibration (LAPC) for flat amplitude-phase frequency delivery. It features GaN for high speed switching while keeping signal loss low, a proprietary digital link input, analog XLR input, analog RCA input, bi-wiring speaker terminals, and a silent linear power supply.

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DesignCon 2015’s Thursday (January 29th) keynote speaker will be Dr. Alex Lidow, CEO and co-founder of Efficient Power Conversion Corporation (EPC). For most of his career, Alex has focused on improving the efficiency of power conversion in hopes of reducing the environmental impact of energy production and consumption. As an R&D engineer at International Rectifier, he co-invented the HEXFET power MOSFET. The patents from this invention brought in more than $900M. Alex holds numerous additional patents in power semiconductor technology, including basic patents in power MOSFETs as well as in GaN FETs. He recently co-authored the first textbook on GaN transistors, “GaN Transistors for Efficient Power Conversion”. You can catch Alex’s keynote speech at DesignCon 2015 on Thursday, January 29, 12:00 PM – 12:30 PM.

EDN
December 3, 2014
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Practical wireless power systems need to address the convenience factor of such systems. Standards such as the A4WP Class 3 have defined a broad coil impedance range that address the convenience factor and can be used as a starting point to compare the performance of the amplifiers. In this installment of WiGaN both the ZVS Class-D and Class-E amplifiers will be tested at 6.78 MHz to the A4WP Class 3 standard.

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氮化镓（GaN）场效应晶体管随时准备在电压调节器及直流-直流电源应用替代硅功率器件。 与硅MOSFET器件相比，氮化镓晶体管的开关速度快很多及具有更低的导通电阻（R_DS(on)），从而可以实现具有更高功效的功率电源，对我们来说是好的。如果你正在使用氮化镓器件设计功率电路，你必需理解器件的开关速度。

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In this installment of the ‘How to GaN’ series we will discuss a new family of eGaN FETs that is keeping Moore’s Law alive with significant gains in key switching figures of merit that widen the performance gap with the power MOFET in high frequency power conversion.

EEWeb
By: Alex Lidow
October, 2014

根据美国市场研究公司The Information Network指出，碳化硅及氮化镓功率半导体市场于2011年至2017年的复合年均增长率将达63%及营收预测为5亿美元。

Compound Semiconductor
2014年10月
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本章展示在10 MHz频率开关、采用氮化镓场效应晶体管的硬开关降压转换器的结果及提供转换器功耗的细数。此外，我们将展示采用氮化镓场效应晶体管的转换器目前所取得无可匹敌的高频性能及如果要推动器件工作在更高频率时所面对的限制。

EEWeb
作者：Alex Lidow
2014年8月

Long talked about, wide bandgap gallium nitride-on-silicon (GaN-on-Si) transistors are now commercially available. They are being touted for replacing silicon-based MOSFETs, which are turning out to be inefficient for many high-performance power supply designs. Recently, several suppliers of GaN-on-Si-based HEMTs and FETs have emerged in the marketplace, among them Efficient Power Conversion (EPC). To expedite the evaluation of eGAN FETs for power supply designs transitioning from silicon MOSFETs to eGaN FETs, EPC has released several development boards in the last few years.

By Ashok Bindra
Digi-Key Article Library
July 15, 2014
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高压氮化镓器件即将商用化，制造商终于可预期它的市场发展速度将非常迅猛

杂志：Compound Semiconductor
2014年7月
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本章将讨论我们设计的氮化镓场效应晶体管（eGaN^®FET）模块使得电源转换系统设计师很容易可对具超卓性能的氮化镓晶体管进行评估

EEWeb
作者：Alex Lidow
2014年6月

氮化镓器件于2020年的销售额预期可达差不多6亿美元并大约需要制造58万片6英寸晶圆。氮化镓器件的市场将于2016年起发展迅猛，至2020年的複合年均增长率达80%，这个预期是基于EV/HEV预计从2018至2019年开始采纳氮化镓得出。于2015年至2018年，电源供电/功率因数校正将成为主要市场并将最后占氮化镓器件销售总额 50%，届时氮化镓器件于车用市场将急起直追。

Yole Development公司
2014年6月
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业界迅速采纳基于氮化镓的功率器件，因为氮化镓器件的工作频率及开关速度是硅功率器件所不能实现的。

Power Electronics Europe
作者：Alex Lidow博士、Johan Strydom博士及 David Reusch博士
2014年6月

According to the latest report from Yole Développement, the GaN power industry is set for significant growth in the future.

Compound Semiconductor
June 12, 2014
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High frequency enhancement mode transistors, such as the EPC8000 series eGaN^® FETs from EPC, have been widely available since September 2013 and enable simplified designs at RF frequencies. In this installment, we present the RF characteristics of the EPC8000 series devices and show their implementation in a pulsed class A amplifier. The amplifier is pulsed to allow operation within the thermal operating limits of the device, since RF device power dissipation is typically on the same order of magnitude as the RF power delivered, unlike switching devices, such as the EPC8000 series, that operate well above 95 % efficiency. The EPC8000 series FETs, designed originally for switching power conversion applications, otherwise exhibit excellent RF characteristics and in conclusion will be compared with similar specified LDMOS.

EEWeb
By: Alex Lidow
May 29, 2014

硅半导体技术的供应链已经投放超过千亿美元，使得它难以置信地极具效率。制造新兴的高性能氮化镓晶体管如何在这方面可与硅器件匹敌？答案很简单，我们利用硅器件的供应链来制造氮化镓器件，因此可大大降低氮化镓晶体管的制造成本。

Power Systems Design
作者：Alex Lidow
2014年 5月 27日