EPC技术文章

Cascade of Power

Power semiconductors are used across many areas of e-mobility, with different technologies suitable for each part of a vehicle, depending on the voltage and current requirements, while emerging tech is allowing smaller systems to be implemented. With GaN and SiC technologies maturing and coming down in price, adoption is growing, and the technologies are increasingly dominating the design and development of e-mobility powertrain and power systems.

E-Mobility Engineering
March 2024
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Using GaN FETs with Controllers and Gate Drivers Designed for Silicon MOSFETs

Gallium Nitride (GaN) FETs have revolutionized the power electronics industry, offering advantages such as smaller size, faster switching, higher efficiency, and lower costs compared to traditional silicon MOSFETs. However, the rapid evolution of GaN technology has sometimes outpaced the development of dedicated GaN-specific gate drivers and controllers. Consequently, circuit designers often turn to generic gate drivers designed for silicon MOSFETs, necessitating careful consideration of various factors to ensure optimal performance.

Bodo’s Power Systems
February, 2024
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GaN产业版块动荡宜普如何越级挑战?

宜普电源转换公司首席执行官兼共同创办人Alex Lidow表示,GaN的成本竞争力亦与Si MOSFET并驾齐驱,潜在爆发力更有过之而无不及,目前最关键就是得重塑诸多研究者的老旧观念,认为GaN昂贵到碰不得。GaN的技术正迎来转捩点,在先进运算、车用电子、太空电子及消费电子等新型应用设计多数采GaN技术,而非Si MOSFET……

DIGITIMES Asia
2023年9月
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宜普发挥GaN成本优势目标超车Si MOSFET

宜普电源转换公司首席执行官兼共同创办人Alex Lidow接受DIGITIMES专访,提到GaN主要会被应用在650V及以下市场。反之碳化硅则是主导650V以上的市场,它可望取代硅基绝缘栅极双极性晶体管。宜普也在开发对速度及尺寸特性极为要求的400V以下市场。且致力于制造比Si功率元件拥有更高性能、更具成本竞争力的GaN元件。

DIGITIMES Asia
2023年9月
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利用单片氮化镓集成电路设计解决方案以实现更高性能、缩小尺寸和降低成本

事实证明,15 V ~ 350 V 氮化镓异质结场效应功率晶体管在功率转换、电机驱动和激光雷达等应用中,无论是在效率、尺寸、速度和成本方面都比硅器件更具优势 。氮化镓集成电路为许多高频应用提供了多方面的系统级优势。 氮化镓集成电路才刚刚发展,其优势肯定会随着其技术发展而不断增强。

Bodo’s Power Systems
2023年6月
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Power Packaging for the GaN Generation of Power Conversion

Since the launch of GaN-on-Si enhancement mode power transistors in March 2010 there has been a slow but monotonic shift towards adoption and replacement of silicon-based power MOSFETs. Initial adoption came from risk-taker visionaries in applications such as lidar, high-end audio amplifiers, robots, vehicle headlamps, and high-performance DC-DC converters. For the expansion of GaN for power conversion to get beyond the early adopters, a more user-friendly format than the WLCP needed to be developed. This format, however, needed to preserve the key attributes of small size, low RDS(on), high speed, excellent thermal conductivity, and low cost. In other words, the best package would be the least amount of package technically possible. Enter the PQFN…

Bodo’s Power Systems
March, 2023
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GaN’s Evolution from Science Project to Mainstream Power Conductor

Power-conversion technologies are experiencing the first tectonic shift since the move from bipolar to MOS. That shift, of course, is due to the viral adoption of wide-bandgap power devices. At this point, GaN is more than a specialty technology; it is a broad-scale replacement for silicon MOSFETs in applications ranging from 30 V up to 650 V — a multibillion-dollar market.

Power Electronics News
December, 2022
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eBook: The Next Silicon Frontier

Despite the continued progress in traditional transistor scaling, the semiconductor industry has reached an inflection point. The demand for faster, smaller, smarter, and more energy-efficient chips calls for new design and manufacturing paradigms. This eBook includes contributions from technology and market experts Malcolm Penn, Future Horizons; Tim Burgess and Bernd Westhoff, Renesas Electronics; Jean-Christophe Eloy, Yole Group; Luc Van den hove, imec; Ezgi Dogmus, Poshun Chiu, and Taha Ayari, Yole Intelligence; Alex Lidow, Efficient Power Conversion; Victor Veliadis, PowerAmerica; Richard Collins and Yu-Han Chang, IDTechEx; and Jean-René Lèquepeys, CEA-Leti.

EETimes
December, 2022
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Podcast: electronica 2022 preview

From Nov. 15 to 18, electronica 2022 will bring the international electronics industry together at the Munich exhibition grounds. Wide Bandgap Semiconductors, Renewable Energies, Smart Grid, and Energy Storage will be the major topics covered by the Power Electronics Forum at electronica 2022. In this podcast, onsemi president and CEO Hassane El-Khoury, Silanna Semiconductor North America CEO Mark Drucker, and of Efficient Power Conversion (EPC) CEO Alex Lidow will introduce the Power Electronics Forum. Interview with Alex Lidow starts at 31:55

EETimes
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Dispelling a Myth – GaN and Motor Drivers

There is a commonly held belief in the industry that GaN devices are wasted on inverters for electric motors. After all, if the performance of the system is restricted by the use of a 20KHz PWM, then there can be little benefit in using a material that gains the majority of its advantages from faster switching speeds. However, according to Marco Palma, Director of Motor Drives Systems and Applications at EPC, there are some ways that GaN can still prove effective in that role.

Power Systems Design
September, 2022
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企业采访 - 宜普电源转换公司

Easy Engineering媒体采访了宜普电源转换公司(EPC)的市场营销总监Renee Yawger,了解目前氮化镓器件应用的情况和氮化镓技术的未来。

Easy Engineering
2022年5月
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GaN vs. Silicon Smackdown

One way to tell when a new technology has passed the tipping point of adoption is by the voices advocating the status quo. The more conservative voices tend to cite older information that, given the fast change of trajectory that occurs at a tipping point, can lead to poor decisions for new designs. In the world of GaN power devices the tipping point occurred in the past two years when the rate of new GaN-based designs started to double year-on-year, and the legacy MOSFET designs started to face critical supply shortages due to their finely tuned, but less flexible supply chains. GaN devices, on the other hand, have remained in stock at most major distributors due to their relatively new and flexible supply chains utilizing older silicon foundries, but affording these foundries a new and vibrant future. In this article we will address some of the common misconceptions still showing up in articles and at conferences, usually presented by advocates of the status quo.

Bodo’s Power Systems
May, 2022
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宽带隙器件建构高效节能绿世界

以碳化硅(SiC)、氮化镓(GaN)材料为主流的宽带隙(WBG)半导体功率器件,在节能永续意识抬头的今日成为各种功率系统应用的宠儿。2022年Tech Taipei研讨会首度以WBG器件为题,邀请业界重量级业者,从设计、制造、测试等不同面向与现场超过400位听众分享最新技术与应用趋势...

EE Times Taiwan
2022年3月25日
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功率系统采用GaN的5大误区

我们将在本文讨论客户为何迟迟未采用氮化镓技术的一些最常见原因,氮化镓技术显然是较旧的硅基功率MOSFET的替代技术。在不深入研究详细的统计数据下,按最常发生推导出一系列原因,并理解某些应用比其他应用更侧重氮化镓技术的某些特性。我们的讨论仅限于额定电压低于400 V的器件,因为这是EPC公司的氮化镓场效应晶体管和集成电路的重点应用。

PSD功率系统设计
2022年3月
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Low-Voltage GaN FETs in Motor Control Application; Issues and Advantages: A Review

In the field of motion control, there is a growing use of GaN devices, especially in low voltage applications. This paper provides guidelines for designers on the optimal use of GaN FETs in motor control applications, identifying the advantages and discussing the main issues.

Energies Journal
October, 2021
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GaN Devices for Smaller, Lighter, Smoother Motor Drives

Today, the permanent magnet motor, also known as DC brushless motor (BLDC), is widely used and offers higher torque capability per cubic inch and higher dynamics when compared to other motors. So far, silicon-based power devices have been dominant in the inverter electronics, but today their performance is nearing their theoretical limits. There is an increasing need for higher power density. Gallium nitride (GaN) transistors and ICs have the best attributes to satisfy these needs.

Power Systems Design
November, 2021
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FET Roundup: eGaN FETs, Next-gen SiC FETs, and “RibbonFETs” Hit the Scene

This month has been a busy one in the FET space. Here are a few FETs from EPC, UnitedSiC, and Intel that depart from traditional silicon transistors in interesting ways.

All About Circuits
October, 2021
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应对用于超薄计算应用的超薄并具高功率密度的 48 V DC/DC 转换器的电源和磁性设计挑战

在过去十年中,计算机、显示器、智能手机和其他消费电子系统变得更薄,同时功能也变得更强大。因此,市场对具有更高功率密度的更纤薄电源解决方案的需求不断增加。本文研究了额定功率为 250 W且超薄的48 V / 20 V转换器,它可以采用各种非隔离型 DC/DC 降压拓扑的可行性。我们研究了各种非隔离型拓扑的优缺点,从而了解拓扑如何影响功率晶体管和磁性元件的选择,特别是电感器,因为这两个器件产生转换器的大部分损耗。本文还详细分析了为这些应用设计薄型电感器所面对的挑战,包括电感器损耗的因素、电感器尺寸和设计权衡,包括对 EMI 的影响。我们是以选择、构建和测试了超薄多电平转换器拓扑。从该转换器获得的实验结果,用于进一步优化操作设置和元件的选择,从而实现超过 98%的峰值效率。

EPC公司Michael de Rooij
Würth Elektronik 公司Quentin Laidebeur

IEEE Power Electronics Magazine
2021年9月
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Bodo 宽带隙专家演讲 – 氮化镓半导体专题 - 2021 年 6 月

由 Bodo Power Systems 主办的氮化镓行业专家圆桌会议的嘉宾包括:

  1. EPC公司的首席执行官兼共同创始人Alex Lidow
  2. Power Integrations公司的市场营销与应用工程副总裁Doug Bailey
  3. Nexperia 公司的氮化镓功率技术营销战略总监Dilder Chowdhury
  4. Navitas Semiconductor公司的市场营销战略高级总监Tom Ribarich

Using GaN FETs can be as simple as using Silicon FETs – an example in 48V systems

In this article, the author introduces a GaN FET compatible analog controller that yields a low bill-of-material count and give designers the ability to design a synchronous buck converter in the same simple way as using silicon FETs, and offers superior performance for 48 V power systems.

Power Electronics News
April, 2021
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