EPC技术文章

PODCAST: GaN for Motor Control and LiDAR Applications

In this episode of PowerUP featuring Alex Lidow, CEO of EPC, we delve into an examination of the revolutionary implications of GaN technology across a range of applications, with a specific focus on motor control and LiDAR systems.

Power Electronics News
February, 2024
Listen to podcast

GaN’s Evolution from Science Project to Mainstream Power Conductor

Power-conversion technologies are experiencing the first tectonic shift since the move from bipolar to MOS. That shift, of course, is due to the viral adoption of wide-bandgap power devices. At this point, GaN is more than a specialty technology; it is a broad-scale replacement for silicon MOSFETs in applications ranging from 30 V up to 650 V — a multibillion-dollar market.

Power Electronics News
December, 2022
Read article

CES 2022: GaN Technology for the Next Future

The year 2021 was a transitional year in which the world decided to open its doors to GaN. In this interview with Power Electronics News during CES week, GaN industry experts confirmed that GaN is now proving its superiority over silicon.

Power Electronics News
January, 2022
Read article

LiDAR System Design of ToF Laser Driver with GaN

The new gallium nitride (GaN) family aims to deliver time-of-flight (ToF) applications for autonomous cars and 3D sensing across the consumer and industrial sectors. In an interview with EE Times, Alex Lidow, CEO at EPC, highlighted how introducing the eToF Laser Driver family’s for LiDAR system design at a low cost competes with the Mosfet when it comes to LiDAR applications.

EEWeb
September, 2021
Read article

氮化镓和 碳化硅器件的下一个浪潮

根据将氮化镓和碳化硅材料的电子从价带转移到导带所需的能量,氮化镓和碳化硅器件被指定为宽带隙 (WBG) 半导体——碳化硅器件约为 3.2 eV,氮化镓器件则约为 3.4 eV,而硅器件只有1.1 eV 。WBG 的击穿电压更高,在某些应用中可以达到 1,700 V。 在今年 5 月举行的线上PCIM Europe展会上,几家公司展示了他们在 氮化镓和碳化硅技术方面的最新创新,并就 WBG 技术的发展方向分享了其独特见解。

EE Times – Europe
2021 年 7 月
阅读文章

Laser Driver IC Could Spur Burst Of Activity In Lidar Applications

New family of laser driver IC products will enable faster adoption and increased ubiquity of ToF solutions across a wider array of end-user applications.

How2Power
March, 2021
Read article

GaN Reliability Testing Beyond AEC for Automotive Lidar

An automotive application using GaN power devices in high volume is lidar(light detection and ranging) for autonomous vehicles. Lidar technology provides information about a vehicle’s surroundings, thus requiring high accuracy and reliability to ensure safety and performance. This article will discus a novel testing mechanism developed by EPC to test eGaN devices beyond the qualification requirements of the Automotive Electronics Council (AEC) for the specific use case of lidar.

Power Systems Design
December, 2020
Read article

GaN ePower™ Ultrafast Switch with Integrated Gate Driver for Indirect Time-of-Flight Laser Drivers

Gallium nitride FETs have continued to gain traction in many power electronic applications, but GaN technology is still in the early part of its life cycle. While there is much room to improve basic FET performance figures of merit an even more promising avenue is the development of GaN power ICs.

Bodo’s Power Systems
November, 2020
Read article

面向快速发展的关键应用的GaN HEMT,它的性能优于MOSFET

硅功率MOSFET未能跟上电力电子行业的发展变化,而效率、功率密度和更小的外形尺寸等因素是行业的主要需求。 硅MOSFET器件的性能已达到其理论极限,并且由于电路板的空间非常宝贵,因此功率系统设计人员必需找出替代方案。 氮化镓(GaN)器件是一种高电子迁移率晶体管(HEMT),这种半导体正为新兴应用不断增值。

EETimes
2020年8月
阅读全文

GaN Reliability Testing Beyond AEC Proves Robustness for Automotive Lidar Applications

Gallium nitride (GaN) power devices have been in volume production since March 2010 and have established a remarkable field-reliability record. An automotive application using GaN power devices in high volume is lidar (light detection and ranging) for autonomous vehicles. Lidar technology provides information about a vehicle’s surroundings, thus requiring high accuracy and reliability to ensure safety and performance. This article will discuss a novel testing mechanism developed by Efficient Power Conversion (EPC) to test eGaN devices beyond the qualification requirements of the Automotive Electronics Council (AEC) for the specific use case of lidar.

eeNews Europe
July 30, 2020
Read article

氮化镓(GaN)技术的最新发展是什么?

著名企业领袖 - 宜普电源转换公司(EPC)首席执行官Alex Lidow于2009年在市场推出第一个氮化镓晶体管。 经过了10年的氮化镓产品销售,DESIGN & ELEKTRONIK 杂志编辑Ralf Higgelke与Alex会面并谈论氮化镓技术的最新发展。

DESIGN & ELEKTRONIK杂志
2020年2月20日
阅读全文

Go-ahead for GaN

It’s getting harder to avoid using GaN power transistors and ICs, says Alex Lidow. There are many reasons to use GaN-on-Si power transistors such as eGaN FETs, in telecoms, vehicles, healthcare and computing. Smaller, faster, lower cost, and more integrated, GaN-on-Si devices have spent a decade gaining the confidence and trust of designers across the spectrum of power conversion applications.

Electronic Specifier
November 20, 2019
Read article

Executive Interview with Alex Lidow on Winning GaN Applications

Ahead of December’s Power Conference in Munich, Bodo Arlt took the opportunity to get an insight into Alex Lidow’s thoughts on where the GaN market is now and where he sees the potential applications for the future. Dr. Lidow is the CEO and Co-founder of Efficient Power Conversion (EPC).

Bodo’s Power Systems
November, 2019
Read article

PCIM Europe – where power is at the core of innovation

This year’s PCIM Europe was attended by a record number of visitors, over 12,000. Over half (54%) were from outside Germany. They came to see over 500 exhibitors and while the subject matter was diverse and wide-ranging, there were some themes that emerged. GaN and SiC jostled for attention at this year’s PCIM Europe. Showing the potential that GaN has already realised, Efficient Power Conversion (EPC) had a stand that was well-stocked with examples of the eGaN FET technology that the company introduced in 2009.

Electronic Specifier
Read article

The Power and Evolution of GaN, Part 6: GaN Technology Adoption and Roadmap

In the final installment of this series, how GaN has met the requirements to displace silicon is explored. As the adoption rate of GaN explodes, it is important to remember that, while GaN has made many advancements in just a few short years, it is still far from its theoretical performance limitations and thus there are profound improvements that can continue to be achieved. In time, the performance and cost advantages of GaN-on-silicon will result in a majority of applications currently using silicon-based devices converting to the smaller, faster, cheaper, and more reliable GaN technology.

Power Systems Design
February, 2019
Read article

The Power and Evolution of GaN, Part 3: How to Build an Ultra-Fast High-Power Laser Driver using eGaN FETs - That Sees Farther, Better, and at a Lower Cost!

In the first article in this series, how gallium nitride (GaN)-on-silicon low voltage power devices have enabled many new applications, such as light detection and ranging (LiDAR), envelope tracking, and wireless power was discussed. In this article, more detail on one of these leading applications, LiDAR, will be explored. How GaN is being used to make LiDAR systems that see farther, with higher resolution, and at lower cost will be shown.

Power Systems Design
Read article

互联汽车将与氮化镓技术合力打造全新领域

当全自动汽车及电力推进系统成为车载应用发展的推动力,在硅衬底上生成氮化镓的功率器件的庞大新兴市场正逐渐崛起。

Design World
阅读文章

氮化镓的雷霆威力及演变

从2010年开始,自硅基氮化镓(GaN)晶体管商用化后,低压氮化镓晶体管推动了很多全新应用的发展。氮化镓器件具备超快速开关,推动全新市场诸如激光雷达、包络跟踪及无线电源市场的出现。这些全新应用进一步实现更强大的供应链、低制造成本及器件前所未有的高可靠性。这些优势使得比较保守的设计工程师在DC/DC转换器、AC/DC转换器及车载等各种应用开始对氮化镓器件进行评估。在本文章系列,我们将讨论多种发挥氮化镓器件优势的应用,实现最终产品差异化的竞争优势。首先,我们会探讨是什么因素加快了氮化镓器件的普及。

Power Systems Design
阅读文章

设计激光雷达应用及进一步应用于全自动电动车方程式E赛车

eGaN FET(及目前的集成电路)之可以应用于全自动车辆的激光雷达系统,以及全自动电动赛车,是因为这些器件可以实现高很多的分辨率(由于具备超短激光脉冲)、更快速的图像速度(由于短激光脉冲),及可以准确地看得更远(由于在超高电流时可以实现快速激光脉冲)。

Planet Analog
阅读全文

GaN Devices Power the Next Generation of LiDAR Systems

For LiDAR systems to meet ever-higher performance specs, they must perform fast switching of high-current pulses, which is where a gallium-nitride power switch can step in to help.

Electronic Design
Read article

RSS
12