作者：宜普公司产品应用副总裁Johan Strydom博士
日期：2012年4月30日刊载于Power Electronics Technology 杂志

在射频功率放大器的包络跟踪不是新技术。但随着社会对电源产业日益增长的需求如增长手机的电池寿命、提高基站的能效及增加高成本的射频传输器的输出功率，通过包络跟踪来提高射频功率放大器系统的效率已经成为科研的一个重要议题。

我们在这篇文章展示了在大功率输出的包络跟踪应用中的降压转换器，如何使用eGaN FET实现功率及效率方面可达到的成效。

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eGaN FET是以太网供电(PoE)应用中可行且高效方案，用以替代标准MOSFET解决方案。这些FET支持更高的工作频率，因而可以减小转换器体积和成本。我们搭建了13W和26W内含eGaN FET以太网供电转换器，并与标准MOSFET设计进行了逐项评估。不管在那种情况下，eGaN FET转换器都具有比MOSFET转换器更高的效率，因而具有降低系统成本的巨大潜力。

By Johan Strydom, Ph.D., Vice President of Applications, EPC
Michael de Rooij, Ph.D., Director of Applications, EPC
March 1, 2011

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eGaN FETs differ from silicon MOSFETs in part because of their significantly faster switching speeds. In the second article of this series, we explore the different requirements for gate drive, layout, and thermal management.

By Johan Strydom PHD, Director of Application Engineering, EPC
Power Electronics Technology
January 1, 2011

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As enhancement mode gallium-nitride-on-silicon transistors (eGaN™) gain wider acceptance as the successor to the venerable - but aged - power MOSFET, designers have been able to improve power conversion efficiency, size, and cost. eGaN FETs, however, are based on a relatively new and immature technology with limited design infrastructure to quickly design and implement products.

By Johan Strydom PhD, Director of Application Engineering EPC
Bodo’s Power Systems
November, 2010

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Efficient Power Conversion’s (EPC) enhancement-mode gallium-nitride (eGaN) power transistors, although similar to standard power MOSFETs, deliver performance unattainable by silicon-based devices.

Yanping Ma, PhD, Efficient Power Conversion, El Segundo, Calif.
How2Power
October, 2010

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The recent introduction of enhancement mode GaN transistors (eGaN™) as power MOSFET/ IGBT replacements in power management applications enables many new products that promise to add great system value. In general, an eGaN transistor behaves much like a power MOSFET with a quantum leap in performance, but to extract all of the newly-available eGaN transistor performance requires designers to understand the differences in drive requirements.

By Johan Strydom and Alex Lidow
September, 2010

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One yardstick to compare enhancement mode GaN (eGaN) power devices with state-of-the-art silicon MOSFETs is FOM. However, beyond these pure mathematical numbers, there are other device and package related parameters that significantly influence in-circuit performance.

By Johan Strydom PHD, Director of Application Engineering, EPC
Power Electronics Technology
September 1, 2010

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Thirty years of silicon power-MOSFET development has taught us that one of the key variables controlling the adoption rate of a disruptive technology is how easy the new technology is to use. This principle has guided the design of EPC’s enhancement-mode GaN (eGaN) transistors. This article explains why eGaN devices are easy to use, describing how they operate and their similarities and differences versus power MOSFETs.

By Johan Strydom
How2Power
June, 2010

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Due to its advantages GaN will probably become the dominant technology. GaN has a much higher critical electric field than silicon which enables this new class of devices to withstand much greater voltage from drain to source with much less penalty in on-resistance.

By Alex Lidow, PhD
Bodo’s Power Systems
June, 2010

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Recent breakthroughs by EPC in processing gallium nitride (GaN) have produced enhancement-mode devices with high conductivity and hyper-fast switching, with a silicon-like cost structure and fundamental operating mechanism.

By Robert Beach, Steve Colino
Electronic Design
April 29, 2010

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For the past three decades, Silicon-based power management efficiency and cost have shown steady improvement. In the last few years, however, the rate of improvement has slowed as the Silicon power MOSFET has asymptotically approached its theoretical bounds. Gallium Nitride grown on top of a silicon substrate could displace Silicon across a significant portion of the power management market.

By Alex Lidow, PhD
Power Electronics Europe
Issue 2, 2010

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