歡迎您與氮化鎵（GaN）技術專家一起在CES的EPC虛擬展臺中，探索基於更高效、更小尺寸和更低成本的氮化鎵場效應電晶體和積體電路的解決方案，如何增強消費電子產品的功能和性能。

宜普電源轉換公司（EPC）宣佈在1月11日至14日舉行的全數位國際消費電子展（CES）展示其eGaN^®技術如何改變了消費電子應用的遊戲規則，並且提高產品性能，包括全自動駕駛車輛、電動交通運輸、無人機、機器人和48 V電源轉換等應用。

Gallium nitride (GaN) transistors have been in mass production for over 10 years. In their first few years of availability, the fast switching speed of the new devices – up to 10 times faster than the venerable Si MOSFET – was the main reason for designers to use GaN FETs. As the pricing of GaN devices normalized with the MOSFET, coupled with the expansion of a broad range of devices with different voltage ratings and power handling capabilities, much wider acceptance was realized in mainstream applications such as DC-DC converters for computers, motor drives for robots, and e-mobility bikes and scooters. The experience gained from the early adopters has led the way for later entrants into the GaN world get into production faster. This article is the first in a series of articles discussing three topics that can help power systems designers achieve the most out of their GaN-based designs at the lowest cost. The three topics are: (1) layout considerations; (2) thermal design for maximum power handling; and, (3) EMI reduction techniques for lowest cost.

Bodo’s Power Systems
January, 2021
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Standard qualification testing for semiconductors typically involves stressing devices at-or-near the limits specified in their data sheets for a prolonged period of time, or for a certain number of cycles. The goal of qualification testing is to have zero failures out of a large group of parts tested. By testing parts to the point of failure, an understanding of the amount of margin between the data sheet limits can be developed, but more importantly, an understanding of the intrinsic failure mechanisms of the semiconductor can be found.

IEEE Power Electronics Magazine
December, 2020
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An automotive application using GaN power devices in high volume is lidar(light detection and ranging) for autonomous vehicles. Lidar technology provides information about a vehicle’s surroundings, thus requiring high accuracy and reliability to ensure safety and performance. This article will discus a novel testing mechanism developed by EPC to test eGaN devices beyond the qualification requirements of the Automotive Electronics Council (AEC) for the specific use case of lidar.

Power Systems Design
December, 2020
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EPC introduces the 40 V, 3 milliohm EPC2055 eGaN^® FET, offering designers a device that is smaller, more efficient, and more reliable than currently available devices for high performance, space-constrained applications.

EL SEGUNDO, Calif. — December 2020 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2055 (3 mΩ, 40 V) eGaN FET. 

EL SEGUNDO, Calif. — December 2020 — BrightLoop Converters has greatly reduced the size, cost and improved reliability of its latest BB SP DC-DC buck converters thanks to Efficient Power Conversion Corporation’s (EPC) EPC2029 enhancement-mode gallium nitride (eGaN^®) FET transistors. By switching from silicon (Si) transistors to gallium nitride (GaN), BrightLoop was able to increase the switching frequency of their design from 200 kHz to 600 kHz, while keeping the same efficiency. This design change increased the power density of the solution by a factor of approximately two and this resulted in lower cost by enabling the implementation of a smaller enclosure.

EPC’s EPC2029 is an 80 V, 48 A eGaN^® FET featuring a 1 mm ball pitch. The wider pitch allows for placement of additional and larger vias under the device to enable high current carrying capability despite the extremely small 2.6 mm x 4.6 mm footprint.

面向高功率密度和低成本的DC/DC轉換，EPC9151功率模組利用EPC2152 ePower™功率級實現性能更高和尺寸更小的解決方案。

宜普電源轉換公司（EPC）宣佈推出EPC9151，这是一款300 W、雙向、超小尺寸的1/16磚型DC/DC降壓轉換器模組，其尺寸僅為33 mm x 22.9 mm (1.3”x 0.9”)。EPC9151採用Microchip公司的數位信號控制器（dsPIC33CK）和EPC公司的 ePower™ 功率級集成电路（EPC2152），於300 W、48 V/12 V的轉換器中，可以實現95％以上的效率，而且可以在這個可擴展的兩相設計中增加相數，使得功率可以更高。

Gallium nitride power device technology enables a new generation of power converters in space operating at higher frequencies, higher efficiencies, and greater power densities than everachievable before. GaN power devices can also exhibit superior radiation tolerance compared with Silicon MOSFETs depending upon their device design.

Power Electronics Europe
December, 2020
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寬能隙（WBG）半導體例如碳化矽（SiC）和氮化鎵（GaN）是功率轉換的前沿科技。它們為設計工程師帶來具有全新的頻譜、功率密度和外型尺寸的元件。

EDN Editorial Advisory Board
2020年12月
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宜普電源轉換公司（EPC）是增強型矽基氮化鎵（eGaN^®）功率場效應電晶體和積體電路的全球行業領先供應商，其首席執行長兼共同創辦人Alex Lidow博士於2020全球電子成就獎（WEAA）評選中，榮獲年度傑出貢獻人物獎。

全球電子成就獎旨在評選並表彰對推動全球電子產業創新做出傑出貢獻的企業和管理者，以及在業界處於領先地位的產品。由ASPENCORE全球資深產業分析師組成的評審委員會以及各地區（亞洲、美國、歐洲）網站用戶群進行綜合評定共同評選出得獎者。

宜普電源轉換公司（EPC）推出170 V、6.8毫歐的EPC2059氮化鎵場效應電晶體(eGaN^® FET），相比目前用於高性能48 V同步整流的元件，EPC為設計工程師提供更小型化、更高效、更可靠且成本更低的元件。

宜普電源轉換公司是增強型矽基氮化鎵（eGaN）功率場效應電晶體和積體電路的全球領先供應商，旨在提高產品性能而同時降低可發貨的氮化鎵電晶體的成本，推出EPC2059(6.8 mΩ、170 V)氮化鎵場效應電晶體，是100 V ~ 200 V解決方案系列的最新產品，該系列適用於廣闊的功率級並備有不同價格的元件可供選擇，滿足市場對48 V ~ 56 V伺服器和數據中心產品，以及一系列用於高端運算的消費類電源應用（包括遊戲PC，LCD / LED電視和LED照明）不斷增長的需求。

Stefan Werkstetter appointed as New Director of Sales for EMEA to focus on assisting customers in the adoption of eGaN^® FETs and Integrated Circuits for applications including DC-DC, lidar, motor control, and other leading-edge power conversion systems

EL SEGUNDO, Calif. — November 2020 — To support the continued adoption of gallium nitride (GaN) FETs and Integrated Circuits in the European market, Efficient Power Conversion Corporation (EPC) is pleased to announce the appointment of Stefan Werkstetter as Director, Sales EMEA.

氮化鎵（GaN）技術已實現重大改進，而且它極具成本效益，可以替代MOSFET元件。 從2017年開始，採用氮化鎵元件的48 V DC/D轉換器開始成為市場上重要的應用。 各種拓撲諸如多相和多級降壓轉換器，實現具備更高效率的全新解決方案，可以滿足IT和汽車市場的能源需求。

Power Electronics News
2020年11月
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Gallium nitride FETs have continued to gain traction in many power electronic applications, but GaN technology is still in the early part of its life cycle. While there is much room to improve basic FET performance figures of merit an even more promising avenue is the development of GaN power ICs.

Bodo’s Power Systems
November, 2020
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The ultimate aim of Artificial Intelligence is to provide machines the ability to operate autonomously. One such area which is projected to grow exponentially over the next decade is Autonomous Vehicles. With Artificial Intelligence coupled with the rapid advances in electronics and computer technology, the word driverless will soon take over the roads.

AI Time Journal
October, 2020
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THIEF RIVER FALLS, Minnesota, USA – Digi-Key Electronics, the leading global electronic components distributor, announced that it has partnered with Efficient Power Conversion Corporation (EPC) to host a webinar on how to harness the power of eGaN FETS and ICs for motor drives. The webinar will take place on October 28 at 8 a.m. PST.

Register for the Harness the Power of GaN for Smaller, Lighter, More Precise Motor Drives webinar at EPC’s webinar page

基於宜普電源轉換公司（EPC）超高效eGaN^® FET的兩種高功率密度DC/DC轉換器，推動超薄筆記型電腦、顯示器、高端遊戲系統和其他纖薄型消費電子產品實現高效解決方案

宜普電源轉換公司（EPC）宣佈推出用於48 V DC/DC轉換的EPC9148和EPC9153演示板。 EPC9153是一款250 W超薄電源模組，採用簡單且低成本的同步降壓配置，峰值效率高達98.2％，其元件的最大厚度為6.5 毫米。 EPC9148使用多電平拓撲結構，元件的最大厚度小於4 毫米，峰值效率為98％。

離散式功率電晶體，無論它是矽基還是矽基氮化鎵，都進入了最後發展階段。 矽基氮化鎵積體電路可以在較小的佔板面積內實現更高的性能，並且顯著降低成本和減少所需的元件工程。 本文詳細闡析氮化鎵元件的崛起和矽基氮化鎵積體電路如何重新定義功率轉換。

Bodo’s Power Systems
2020年10月
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新一代100 V 氮化鎵場效應電晶體（eGaN^® FET）是48 V_OUT同步整流、D類音訊放大器、汽車資訊娛樂及雷射雷達系統的理想功率元件。

增強型矽基氮化鎵（eGaN）功率場效應電晶體和積體電路的全球領導廠商宜普電源轉換公司（EPC）最新推出的兩款100 V eGaN FET（EPC2218及EPC2204），性能更高並且成本更低，可立即供貨。採用這些先進氮化鎵元件的應用非常廣闊，包括同步整流器、D類音訊放大器、汽車資訊娛樂系統、DC/DC轉換器（硬開關和諧振式）和面向全自動駕駛車輛、機械人及無人機的雷射雷達系統。

Standard qualification testing for semiconductors typically involves stressing devices at-or-near the limits specified in their data sheets for a prolonged period of time, or for a certain number of cycles, with the goal of demonstrating zero failures. By testing parts to the point of failure, an understanding of the amount of margin beyond the data sheet limits can be developed, but more importantly, an understanding of the intrinsic failure mechanisms of the semiconductor can be found.

Bodo’s Power Systems
September, 2020
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