中壓氮化鎵場效應電晶體（eGaN FET）的成本在三年前已經比等效額定功率MOSFET器件的成本更低。當時，EPC公司決心利用氮化鎵場效應電晶體的性能及成本效益優勢，積極研發及支持48 V輸入或輸出的應用。車用及電腦應用的48 V 轉換逐漸成為全新的架構，也成為了功率系統的全新標準。

Power Systems Design
2020年3月31日
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繼第一至第十階段可靠性測試報告後，EPC公司的第十一階段可靠性測試報告進一步豐富知識庫。此報告對受測元件進行超過1230億元件-小時應力測試，並且展示氮化鎵元件的穩定性是矽功率元件所不能實現的。

EPC公司發佈第十一階段可靠性測試報告，與工程師分享受測元件如何實現優越的現場可靠性的策略 - 在廣闊測試條件下，採用失效性測試元件（test-to-fail）的反覆測試方法，從而知道如何構建更穩固的產品以達到應用所需，例如面向全自動駕駛車輛的雷射雷達、LTE通信基站、汽車的車頭燈及衛星等應用。

宜普電源轉換公司（EPC）依據《氮化鎵電晶體–高效功率轉換元件》第三版教科書的增訂內容，更新了首7個、合共14個教程的視頻播客，與工程師分享採用氮化鎵場效應電晶體及積體電路的理論、設計基礎及應用，例如雷射雷達（光達）、DC/DC轉換及無線電源等應用。

宜普電源轉換公司（EPC）更新了其廣受歡迎的“如何使用氮化鎵元件”的視頻播客系列。該視頻系列的內容是依據最新出版的《氮化鎵電晶體–高效功率轉換元件》.第三版教科書的內容製作。合共14個教程的視頻播客系列旨在為功率系統設計工程師提供基礎技術知識及針對專有應用的工具套件，從而讓工程師學習如何採用氮化鎵電晶體及積體電路，設計出更高效的功率轉換系統。

An integrated circuit made using GaN-on-Si substrates has been in production for over five years. The ultimate goal is to achieve a single component IC that merely requires a simple digital input from a microcontroller and produces a power output that drives a load efficiently, reliably under all conditions, in the smallest space possible, and economically. Discrete power transistors, whether silicon-based or GaN-on-Si, are entering their final chapter. Integrated GaN-on-Si can offer higher performance in a smaller footprint with significantly reduced engineering required.

IEEE Power Electronics Magazine
March 2020
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矽功率MOSFE追不上目前功率電子業界的演進步伐 -- 業界需要具備高效、高功率密度及細小的外型尺寸的元件。業界看到矽MOSFET已經達到它的理論極限，從而需要找出全新元件。氮化鎵（GaN）是一種HEMT元件，具備附加增值的優勢，被證明為可以支持全新應用的要求。

Power Electronics News
2020年3月25日
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宜普電源轉換公司（EPC）推出全新積體電路(IC)系列的首個產品，為高功率密度應用諸如DC/DC轉換、電機驅動及D類放大器，提供更高性能及更小型化的解決方案。

宜普電源轉換公司（EPC）宣佈推出80 V、12.5 A的功率級積體電路，專為48 V DC/DC轉換而設計，用於具有高功率密度的運算應用及針對電動車的電機驅動器。

A recent design for an ultra-high speed, low-impedance pulse generator to evaluate oscilloscope probe performance and for determining the feasibility of an in-socket load for ASIC emulation using EPC eGaN™ FET, EPC2037 reveals just how fast these power devices are.

Signal Integrity
March 12, 2020
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從2010年3月起，氮化鎵（GaN）功率元件已經實現高可靠性並進行量產。本章詳細闡析如何測試出元件在何時開始失效，從而瞭解數據手冊給出的元件工作條件，距離其工作極限值還有多少餘量。而最重要的是，找出元件固有的失效機理，瞭解其失效的根本原因、恒常操作情況、溫度、電氣應力或機械應力等，從而知道產品在一般工作條件下，它的安全使用壽命。

Power Systems Design
2020年3月
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知名企業領袖 - 宜普電源轉換公司（EPC）首席執行官Alex Lidow於2009年在市場推出第一個氮化鎵電晶體。 經過了10年的氮化鎵產品銷售，DESIGN & ELEKTRONIK 雜誌編輯Ralf Higgelke與Alex會面並談論氮化鎵技術的最新發展。

DESIGN & ELEKTRONIK雜誌
2020年2月20日
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EPC9144演示板內的車規級EPC2216氮化鎵場效應電晶體（eGaN^® FET）可支援大電流納秒脈衝的應用，提供高速的大電流脈衝 – 電流可高達28 A、脈寬则可低至1.2納秒，從而使得飛行時間及flash雷射雷達系統更準確、更精確及更快速。

宜普電源轉換公司（EPC）宣佈推出15 V、28 A大電流脈衝雷射二極體驅動電路板（EPC9144）。

當矽技術已經到了性能極限，採用氮化鎵元件的全新設計使得氮化鎵技術得以繼續普及。氮化鎵元件的發展還是剛剛起步，它的性能將得以繼續提升、積體電路也將會更具優勢，以及將有更多全新的氮化鎵產品推出市場。

Electronics Weekly
2019年12月
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於Venetian酒店的hospitality suite現場，EPC將為工程師展示改變世界的創新應用與氮化鎵（GaN）技術如何共創全新領域。基於氮化鎵元件的解決方案具備更高效、更小尺寸及更低成本等優勢。

宜普電源轉換公司（EPC）將在2020年1月7日至10日，於美國拉斯維加斯舉行的國際消費電子展（CES 2020）為工程師展示eGaN^®技術的龐大潛力，它可以推動多種消費電子應用的發展，從而改變市場的遊戲規則，包括全自動駕駛車輛、機器人、無人機、無線電源、世界第一流的音訊系統及車用解決方案。

於CES 2020 展覽，歡迎蒞臨Venetian酒店內的EPC演示套房，與氮化鎵專家一起參觀、學習及討論氮化鎵技術如何推動改變世界的創新設計的發展。

Smaller, faster, lower cost, and more integrated, GaN-on-Silicon devices have the confidence of designers across a spectrum of power conversion applications. In this article, Alex Lidow explains why it’s getting harder to avoid using GaN power transistors and ICs.

Electronic Specifier
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宜普電源轉換公司首席執行長Alex Lidow 在是次硏討會討論氮化鎵技術如何大大改善系統的效率、尺寸及成本，從而加快磁共振及AirFuel共振技術的普及。

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It’s getting harder to avoid using GaN power transistors and ICs, says Alex Lidow. There are many reasons to use GaN-on-Si power transistors such as eGaN FETs, in telecoms, vehicles, healthcare and computing. Smaller, faster, lower cost, and more integrated, GaN-on-Si devices have spent a decade gaining the confidence and trust of designers across the spectrum of power conversion applications.

Electronic Specifier
November 20, 2019
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It’s okay to start using gallium-nitride (GaN) devices in your new designs. GaN transistors have become extremely popular in recent years. These wide-bandgap devices have been replacing LDMOS transistors in many power applications. For example, GaN devices are broadly being adopted for new RF power amplifiers used in cellular base stations, radar, satellites, and other high-frequency applications. In general, their ability to endure higher voltages and operate at frequencies well into the millimeter-wave (mmWave) range have them replacing traditional RF power transistors in most amplifier configurations.

Electronic Design
November, 2019
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This article discussed an oft forgotten or little-noticed part of the spacecraft enabling travel into outer space---power management in the space vehicle. Wide bandgap semiconductors like gallium nitride (GaN), silicon carbide (SiC), as well as diamond, are looking to be the most promising materials for future electronic components since the discovery of silicon. These technologies, depending upon their design, offer huge advantages in terms of power capability (DC and microwave), radiation insensitivity, high temperature and high frequency operation, optical properties and even low noise capability. Therefore, wide bandgap components are strategically important for the development of next generation space-borne systems. eGaN devices are quickly gaining momentum in the space industry and we will see many more applications for them by NASA and commercial contractors in future programs like Artemis and other programs in countries around the globe pursuing efforts into Space.

Power Systems Design
November, 2019
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Ahead of December’s Power Conference in Munich, Bodo Arlt took the opportunity to get an insight into Alex Lidow’s thoughts on where the GaN market is now and where he sees the potential applications for the future. Dr. Lidow is the CEO and Co-founder of Efficient Power Conversion (EPC).

Bodo’s Power Systems
November, 2019
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In support of a widening customer base in Europe, Efficient Power Conversion Corporation has expanded its technical leadership team to assist customers in the adoption of eGaN^® FETs and Integrated circuits for applications including DC-DC, Lidar, motor control, and beyond.

EL SEGUNDO, Calif. — October, 2019 — To support its accelerating design activity, and to provide local technical support to EPC’s customers in Europe, Efficient Power Conversion Corporation (EPC) is proud to announce that Marco Palma, a seasoned expert, has joined the EPC technical leadership team as Senior FAE Manager for Europe. 

氮化鎵（GaN）及碳化矽（SiC）元件的價格下調，對客戶而言，更為吸引。多家供應商推出基於氮化鎵及碳化矽的功率半導體，摩拳擦掌，正在爆發新一輪的半導體大戰，全速進攻傳統矽基元件的市場份額。

Semiconductor Engineering
2019年10月
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