宜普電源轉換公司(EPC)的車規級並通過AEC Q101認證的氮化鎵電晶體系列增添全新成員 -- 經過優化的15 V EPC2216，實現不昂貴的高性能雷射雷達系統。

宜普公司宣佈15 V的EPC2216成功通過AEC Q101認證，專為需要高準確性的雷射雷達應用而設計，例如全自動駕駛汽車，以及其他的飛行時間（ToF）應用，包括人面識別、自動化倉庫、無人機及地圖製作。

GaN theory and applications, such as lidar, DC-DC conversion, and wireless power using gallium nitride FETs and ICs, form the focus of this third edition of “GaN Transistors for Efficient Power Conversion”

EL SEGUNDO, CA – October 2019 – Efficient Power Conversion Corporation (EPC) announce the publication of the third edition of “GaN Transistors for Efficient Power Conversion,” a textbook written by power conversion industry experts and published by John Wiley and Sons. 

Efficient Power Conversion (EPC) provides gallium nitride-based power devices for Solace Power’s 250 W wireless power platforms to enable higher power solutions and faster design cycle times.

EL SEGUNDO, Calif.— September 2019 — EPC announces collaboration with Solace Power, a leading wireless power, sense and data company, to enable 250-watt wireless power solutions designed for 5G, aerospace, automotive, medical, and industrial applications. Solace Power’s intelligent wireless platform use EPC’s 200 V enhancement-mode gallium nitride (eGaN^®) power transistors. This modular platform shares the same Equus™ architecture and enables up to 250 Watts of transmitted power with superior six degrees of spatial freedom.

氮化鎵技術為業界實現以前不可能達到的目標。EPC公司的Alex Lidow闡析醫療護理如何更好地利用氮化鎵技術，實現重大的改進。

Electronic Specifier
2019年8月
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Alex Lidow has deep roots in the electronics industry. His father and grandfather founded International Rectifier in 1947. Alex eventually ran the company himself for 12 years. He is currently the CEO of EPC, a company that manufactures gallium nitride-based power transistors and integrated circuits. These products are now found in lidar systems for autonomous vehicles, in 4G/LTE base stations, in DC-DC converters for servers and satellites, and in a wide variety of medical products.

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GaN transistors, with favorable figures of merit (FOM) for 48 V applications, can provide a reduction in size, weight, and bill of material costs. This article presents a five-phase, fully regulated, bidirectional 48 V to 12 V DC-DC converter. An advancedthermalmanagement solution suitable for use with eGaN FETs results in a system that can provide 3kW of power at an efficiency exceeding 97.5% into a 14.5 V battery.

Power Systems Design
July, 2019
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Small satellites bring a more cost-effective approach to low-Earth-orbit (LEO) missions, helping to deliver low-cost internet access across the globe. For this application, GaN FETs partnered with a radiation tolerant pulse width modulation controller and GaN fet driver allow more efficient switching, higher frequency operation, reduced gate drive voltage and smaller solution sizes compared to the traditional silicon counterparts.

Electronics Weekly
July, 2019
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根據預測，到2025年，我們的數據將會超過175 zettabyte。當發明了 5G並將最早於2020年在日本舉行的奧運採用、以及通過人工智慧（AI）及機器學習（ML）的發展，建立數據中心和其部署、以及提升目前較舊的數據中心的效能，將進入突飛猛進的時代。

我深信氮化鎵（GaN）功率電晶體是數據中心功率架構的最理想元件，因為需要小型化、高效及快速開關的元件。氮化鎵元件在具48 VIN的所有拓撲，都可以實現最高的效率。

EDN
2019年6月
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EPC及Spirit Electronics公司攜手為客戶提供領導業界的氮化鎵功率元件的特定製造批次的資料服務。

宜普電源轉換公司（EPC）宣佈與Spirit Electronics公司攜手為客戶提供一系列氮化鎵功率元件的特定批次的數據。

宜普公司首席執行長及共同創辦人Alex Lidow說：「Spirit Electronics具備與國防及宇航客戶的豐富合作經驗，我們攜手為嚴峻應用環境所需，為客戶增值而提供氮化鎵（eGaN）功率半導體的特定批次的資料包。」

目前的氮化鎵場效應電晶體在尺寸及性能方面以飛快的速度發展，而目前為業界樹立基準的氮化鎵元件的性能還可以提升多300倍。

最早採用氮化鎵元件的應用是利用氮化鎵的超快速開關速度，例如面向全自動駕駛車輛和無人機的雷射雷達系統、機械人，以及4G/LTE基站。氮化鎵元件的產量一直在增加，而其價格跟開關速度更慢、尺寸更大型和日益陳舊的MOSFET元件相約。因此，目前正是氮化鎵元件正面攻擊MOSET的時候！。

Bodo’s Power Systems
2019年6月
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為了使得客戶易於集成功率系統，宜普電源轉換公司（EPC）為客戶提供領導業界的氮化鎵功率元件的晶圓。

EPC公司宣佈推出領導業界的增強型氮化鎵元件的晶圓，使得客戶易於集成功率系統。EPC公司的氮化鎵場效應電晶體（eGaN^® FET）及積體電路一直以來都是以單個並包含錫條或錫球的晶片級元件出售。

EPC proudly announces the induction of Dr. Alex Lidow, CEO and co-founder into the ISPSD Hall of Fame 2019

El Segundo, Calif. – May 2019 – Efficient Power Conversion (EPC) Corporation proudly announces that Dr. Alex Lidow, CEO and co-founder, is inducted into the ISPSD Hall of Fame 2019. This prestigious honor is bestowed upon an honored contributor to advancing power semiconductor technology and sustaining the success of ISPSD. This Hall of Fame award was announced on May 20^th, 2019 at 31^st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2019 at the Marriott Parkview Hotel, Shanghai, China.

Unleash the full potential of your solutions with jjPlus wireless technologies!

TAIPEI, Taiwan, May 21, 2019 — jjPLus Corp. a Taiwan design manufacturer of high quality wireless communications and wireless power embedded solutions, will showcase the next generation Wireless Power Transfer as well as new WiFi solutions at COMPUTEX 2019 in Nangang Exhibition Center, Hall 1, at K1024 booth during May 28 - June 1 in Taipei, Taiwan..

eGaN FETs and ICs enable very high-density power converter design, owing to their compact size, ultra-fast switching, and low on-resistance. The limiting factor for output power in most high-density converters is junction temperature, which prompts the need for more effective thermal design. The chip-scale packaging of eGaN FETs and ICs offer six-sided cooling, with effective heat extraction from the bottom, top, and sides of the die. This article presents a high-performance thermal solution to extend the output current capability of eGaN-based converters.

EDN
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From the heart of Silicon Valley comes a new buzzword. Gallium nitride is the future of power technology. Tech blogs are touting gallium nitride as the silicon of the future, and you are savvy enough to get in on the ground floor. Knowing how important gallium nitride is makes you a smarter, better consumer. You are at the forefront of your peer group because you know of an up and coming technology, and this one goes by the name of gallium nitride.

HACKADAY
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EPC's chief executive, Alex Lidow, believes his GaN devices now beat silicon on performance and price, reports Rebecca Pool.

For EPC chief executive, Alex Lidow, this year's PCIM Europe 2019 has been all about applications. Presenting myriad enhanced-mode GaN FETs and ICs in end-products, the company is making a big play for 48 V DC-DC power conversion in advanced computing and automotives.

Compound Semiconductor
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This year’s PCIM Europe was attended by a record number of visitors, over 12,000. Over half (54%) were from outside Germany. They came to see over 500 exhibitors and while the subject matter was diverse and wide-ranging, there were some themes that emerged. GaN and SiC jostled for attention at this year’s PCIM Europe. Showing the potential that GaN has already realised, Efficient Power Conversion (EPC) had a stand that was well-stocked with examples of the eGaN FET technology that the company introduced in 2009.

Electronic Specifier
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宜普電源轉換公司（EPC）將於歐洲PCIM展會現場演示優越的氮化鎵技術如何提升多種應用所需的電源供電效率，包括運算、通信及運輸行業。

EPC團隊將於5月7日至9日在德國的Nuremberg、歐洲PCIM展覽及研討會的會場，進行7場關於氮化鎵（GaN）技術及應用的演講，並於7號展館、335展覽攤位與工程師會面並分享最新的、基於eGaN^® FET及積體電路的終端客戶產品。

宜普電源轉換公司（EPC）進一步擴大車規級氮化鎵產品系列 -- 全新成員是面向具有高解析度的雷射雷達系統、80 V的EPC2214氮化鎵場效應電晶體，該元件成功通過國際汽車電子協會所制定的AEC Q101應力測試認證。

宜普電源轉換公司（EPC）宣佈再多一個車用氮化鎵(eGaN)元件（80 V的EPC2214）成功通過AEC Q101測試認證，可在車用及其他嚴峻環境支持多種全新應用。

宜普電源轉換公司（EPC）推出兩個全新100 V氮化鎵元件，可以支援伺服器及汽車應用的48 V轉換的要求。 我將在處理器、車用及能量存儲系統等方面探討48 V伺服器的功率轉換解決方案（可參考我的文章 “雙向DC/DC電源供電: 我們應該如何取向？”），未來將在EDN文章中看到。氮化鎵功率電晶體必需是這些不同架構的一部份 -- 我相信沒有其他更優越的元件可以替代氮化鎵元件了 。

Planet Analog
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