基於氮化鎵材料的場效應電晶體正在顛覆功率轉換市場和替代矽基MOSFET。 與MOSFET相比，更快速的氮化鎵場效應電晶體（GaN FET）可以在最細小的體積內實現更高的開關速度。 氮化鎵元件的承諾是可以大大縮減電源供應器的體積及重量。為了實現最高的潛在性能， 這些具備高性能的氮化鎵電晶體需要最優化的閘極驅動器。

Peregrine Semiconductor
2016年7月12日
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在本系列的第一及第二章，我們詳細講解了關於EPC的增強型氮化鎵場效應電晶體(eGaN^®FET)及積體電路(IC)的現場可靠性報告。具備優越的現場可靠性的eGaN元件展示出通過基於應力的認證測試可確保客戶的應用也可以非常可靠。本章將闡釋EPC元件在認證之前被置於及通過的各種應力測試。

Planet Analog
Chris Jakubiec
2016年7月9日
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人們用矽材料命名了“矽谷”，而矽材料現正面對全新並具有潛力的競爭對手 - 氮化鎵（GaN）材料。有說氮化鎵元件可以取得300億美元的半導體電源供應產業的市場份額。這個市場涵蓋了所有利用牆上的電源插座取得電源的產品—從Apple（AAPL）的iPhone充電器，以至Tesla（TSLA）的豪華電動汽車。

Investor's Business Daily
Allison Gatlin
2016年7月
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具備優越特性的eGaN^® FET與積體電路可以實現的低成本解決方案是在發射端採用單個功率放大器，而在接收端無論是採用什麼標準，也可以實現無線充電。

宜普電源轉換公司（EPC）宣佈推出支援多模式的無線充電演示套件（EPC9121），從而簡化對基於eGaN® FET與積體電路的高效多模式無線充電系統進行評估的過程，該系統支援採用任何標準的接收器。

Tuesday I was fortunate enough to have a meeting with Alex Lidow, founder of chip company EPC of El Segundo, California, and something of an luminary of the chip world. Lidow came up with the “power MOSFET,” a device that went on to be the basis of billions in semiconductor sales, in 1977.

His new company, whose initials stand for “Efficient Power Conversion,” proposes replacing silicon, the original basis of the MOSFET, and one of the most prevalent types of semiconductor around, with a different material, Gallium Nitride, commonly abbreviated as GaN — or “eGaN,” as Lidow calls the company’s new, improved form of GaN.

Barron's
Tiernan Ray
June 29, 2016
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There have been several comparisons of eGaN FETs with silicon MOSFETs in a variety of applications, including hard-switched, soft-switched, and high-frequency power conversion. These studies have shown that eGaN FETs have large efficiency and power density advantages over silicon MOSFETs. Here we’ll focus on the use of eGaN FETs in synchronous rectifier (SR) applications and the importance of dead-time management. We show that eGaN FETs can dramatically reduce loss due to dead-time in synchronous rectifiers above and beyond the benefits of low RDS(on)and charge.

Power Systems Design
By: Dr. John Glaser & Dr. David Reusch, Efficient Power Conversion
June 13, 2016
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ANDOVER, Mass.—At the front door of Raytheon's Integrated Air Defense Center, there's a reminder of how big microwave electronics used to be—the original microwave oven. The now ever-present kitchen device was invented after a Raytheon engineer discovered his candy bar melted while he was standing near a magnetron used in a radar system the company was developing. Nearly the size of a refrigerator, the original microwave looks like it would cook a whole lot more than whatever was put within its metal grate, which was meant to contain the microwaves from its magnetron.

Ars Technica
June 9, 2016
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The chip giant's execs are leaving the AirFuel Alliance as the company pivots away from PCs, but WiTricity was showing off Dell notebooks using its wireless charging mat at Computex.

ZDNet
Sean Portnoy
June 8, 2016
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For the last three years, Intel has been stoking demand for PCs ahead of the next big buying cycle with the promise that new machines will be totally wireless. “We carry around a lot of wires,” Kirk Skaugen, Intel’s senior PC exec said at Computex Taipei 2015. “We carry about six cables each for our phones, our tablets and our PCs. We want to get rid of all those cables.”

Forbes
Elise Ackerman
June 6, 2016
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With power converters demanding higher power density, transistors must be accommodated in an ever decreasing board space. Beyond gallium nitride based power transistors’ ability to improve electrical efficiency, they must also be more thermally efficient. This article evaluates the thermal performance of chip-scale packaged eGaN^® FETs and compares their in-circuit electrical and thermal performance with state-of-the-art silicon MOSFETs.

Bodo’s Power Systems
David Reusch, Ph.D. and Alex Lidow, Ph.D.
June 1, 2016
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氮化鎵功率製造商的管理層代表雲集歐洲PCIM研討會，包括EPC、Transphorm、GaN Systems、 Infineon 及Navitas，展示他們的重大發展，為氮化鎵技術成為主流技術及為批量應用推進。從五個演講內容來看，預期業界加速採納氮化鎵元件有三個主要原因。

Bodo’s Power Systems
2016年6月1日
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美國加州MILPITAS - 2016年5月 25日美通社專訊 --佔領電源管理和精確模擬解決方案的市場領導地位的Intersil Corporation (納斯達克指數NASDAQ代號: ISIL) 宣佈計劃進一步擴大其業界領先、面向衛星應用的耐輻射產品系列，在衛星及其他惡劣環境採用具備高可靠性的氮化鎵（GaN）電源轉換積體電路。

美通社
2016年5月25日
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The number one barrier to improving every electronic product – from smart wearables and laptops to handheld tools and electric cars – is battery technology. The current state-of-the-art in rechargeable batteries, Lithium Ion, has been around for 25 years. As tech goes, that’s pretty old. It’s time for something new, don’t you think?

Fortune
Steve Tobak
May 13, 2016
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宜普電源轉換公司（EPC）的增強型氮化鎵場效應電晶體（eGaN^® FET）及積體電路正在驅動最終用戶應用的發展，包括LiDAR、無線充電、DC/DC電源轉換、射頻發射基站、衛星系統及音訊放大器等應用。

從現場可靠性數據可以確證eGaN® FET及積體電路於客戶應用的品質。在本章節，我們分享eGaN^® FET的可靠性及現場數據的概述，包括在過去六年間我們對量產及已經付運的eGaN產品所收集的可靠性現場數據，以及分析超過170億小時受測元件的現場數據。最後所得的FIT比率(109小時內發生失效的元件)大約是0.24，這是目前最好的現場可靠性測試結果。

Plant Analog
作者：Chris Jakubiec
2016年5月1 日
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EPC分享由專家製作的關於終端應用的6個影片，例如無綫電源傳送、48 V–1 V DC/DC單級轉換，以及採用氮化鎵電晶體及集成電路、面向4G/LTE基站的波峰追蹤等應用。

宜普電源轉換公司製作了6個影片，於網上分享採用eGaN^® FET及集成電路（IC）並面向最終用戶的應用。這些影片展示出氮化鎵技術如何改變了我們的生活方式及挑戰功率系統設計工程師如何在他們的新一代功率系統設計中，發揮氮化鎵場效應電晶體的卓越性能。

採用先進氮化鎵電晶體及積體電路（IC）的功率系統設計工程師現在可以利用互動式、網上參數選型工具，替他們的功率轉換系統找出基於氮化鎵元件的最優解決方案。

宜普電源轉換公司（EPC）宣佈推出網上氮化鎵（GaN）產品選型及搜索工具。該互動式選型指南為功率系統設計工程師提供以下的優勢：

資訊的數學基礎始於資訊理論之父Claude Shannon於1948的著作《通信的數學理論》。他把資訊通信簡化為1及0數位，實質上是二進位數字。該理論可以於現實世界中有雜訊的環境下，準確無誤地傳輸數據。Shannon在2016年4月30日本來是他的百年誕辰。

EDN Network
Steve Taranovich
2016年4月16日
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Freebird Semiconductor and Efficient Power Conversion (EPC) have entered into an agreement whereby Freebird will develop products for use in high reliability space and harsh environment applications based upon eGaN^® power transistors and integrated circuits.

NORTH ANDOVER, MA. — April 2016 — Freebird Semiconductor Corporation, North Andover, Massachusetts announces the signing of an agreement with Efficient Power Conversion Corporation (EPC), the leading provider of enhancement-mode gallium nitride power transistors to develop products for use in high reliability, space, and harsh environment applications based upon EPC’s eGaN^® technology.

In this installment of WiGaN, a differential-mode class-E amplifier for 6.78 MHz loosely coupled resonant wireless power applications is presented. It uses the EPC2037 eGaN^® FET which has a small (0.9 mm x 0.9 mm) footprint and can be driven directly with a logic gate. The amplifier is AirFuel™ Class 2 compatible, capable of delivery up to 6.5 W load power over an impedance range of 70j Ω.

EEWeb - Wireless & RF Magazine
Yuanzhe Zhang, Ph.D., Director of Applications Engineering
Michael de Rooij, Ph.D., Vice President of Applications Engineering
April 12, 2016
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In this short video, EPC's Alex Lidow explains why GaN FETs may make it possible to wirelessly charge a variety of vehicles, including flying drones. Wireless charging circuits employing GaN FETs work at 13.56 MHz, a switching frequency difficult to reach with ordinary silicon FETs. The GaN transistors used are also five to ten times smaller than silicon devices able to handle the same power levels.

Design World
April 11, 2016
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