GaN transistors and ICs increase power density in motor drive applications. An optimal lay-out approach allows obtaining ring-free output switching waveforms and clean current reconstruction signals either from leg shunts or from in-phase shunts.

EEPower
October, 2021
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隨著採用氮化鎵（GaN）元件的應用越來越多，Bodo Arlt 借此機會與 EPC公司的首席執行長兼共同創辦人 Alex Lidow 談及他認爲這種不斷發展的技術的下一個重點市場。

Bodo’s Power Systems
2021 年 9 月
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這些新一代氮化鎵場效應電晶體(eGaN FET) 滿足了目前電動出行（eMobility）、交付和物流機器人，以及無人機市場所需的緊凑型 BLDC 電機驅動器和具成本效益、高解析度的飛行時間（ToF）的新需求。

宜普電源轉換公司（EPC）是增强型矽基氮化鎵 (eGaN) 功率電晶體和積體電路的全球領導者。新推的EPC2065 和 EPC2054具備更高的性能和更低的成本等優勢。

Efficient Power Conversion (EPC) introduces a new family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high reliability environments.

EL SEGUNDO, Calif.— June 2021 — EPC announces the introduction of a new family of radiation-hardened gallium nitride transistors and integrated circuits. With higher breakdown strength, faster switching speed, higher thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices. The lower resistance and gate charge enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions. Gallium nitride is also inherently radiation tolerant, making GaN-based devices a reliable, higher performing power transistor option for space applications.

宜普電源轉換公司(EPC) 的氮化鎵專家將在APEC展示最新的增强型氮化鎵場效應電晶體和積體電路的發展，並探討氮化鎵技術的卓越性能如何改變了具高功率密度的運算、車用、電動運輸和機器人等應用的電源供電。

EPC團隊將在6月14日至17 日舉行的APEC虛擬會議暨博覽會上，進行多個關於氮化鎵 (GaN) 技術和應用的技術演示和網絡研討會，並且提供相關的教育教程。此外，EPC公司也參加了此次活動的虛擬展覽，展示出其客戶的終端產品中採用了最新的 eGaN FET和積體電路，從而推動了氮化鎵（eGaN）技術的普及。

氮化鎵電晶體和積體電路提高了馬達控制應用的功率密度。最佳佈局允許從橋臂分流器或同相分流器獲得沒有振鈴噪聲的輸出開關波形和“乾淨“的電流重建信號。

Bodo’s Power Systems
2021 年 6 月
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Manufacturers of GaN power semiconductors showcased their latest products, from 100 V to 650-V devices at PCIM Europe. PCIM Europe showcased several presentations about the benefits and use cases of wide bandgap (WGG) semiconductors, including gallium nitride (GaN) and silicon carbide (SiC). Several manufacturers, including EPC, GaN Systems, Infineon, Nexperia, and STMicroelectronics announced several new families of GaN power semiconductors during the week.

Electronic Products
May, 2021
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EPC9146演示板展示EPC2152 ePower™功率級使能高性能且低成本的BLDC馬達, 從而實現具有更高的性能和更小型化的解決方案。

宜普電源轉換公司（EPC）宣佈推出400 W馬達控制器演示板(EPC9146)，包含三個獨立控制的半橋電路，採用集成了閘極驅動器的單片式EPC2152ePower™功率級，其最大電壓為80 V和最大輸出電流為15 A（10 A_RMS）。板的尺寸僅為81 mm x 75 mm，在輸出功率為400 W時，可實現超過98.4％的效率。

Efficient Power Conversion (EPC) will showcase the company’s latest enhancement-mode gallium nitride-based FETs and ICs demonstrating how GaN technology’s superior performance is transforming power delivery for automotive, computing, and robotics at the PCIM Europe 2021 Digital Days.

EL SEGUNDO, Calif.— April 2021 — The EPC team will be delivering two technical presentations, an educational tutorial, an exhibitor webinar, and participating in panel discussions on gallium nitride (GaN) technology and applications at the upcoming PCIM Europe 2021 Digital Days, May 3 – 7. In addition, the company will participate in the event’s virtual exhibition, showing its latest eGaN FETs and ICs in customers’ end products that are rapidly adopting eGaN^® technology.

Efficient Power Conversion (EPC) announces that the EPC2152 ePower™ Stage IC has received the 2020 Elektra Award for Semiconductor Product of the Year (Analogue).

EL SEGUNDO, Calif.— March 2021 — EPC’s ePower™ stage, EPC2152 Integrated Circuit (IC), has been honored with an Elektra Award 2020 in the Semiconductor Product of the Year – Analogue category. The award presentation was announced on March 25^th during a virtual awards ceremony hosted by Electronics Weekly. These prestigious annual awards have been running for over 19 years to reward and recognize companies and individuals for their excellent performance, innovation, and contribution to the global electronics industry. Judging is carried out by an independently and unbiased, diverse, and knowledgeable panel of industry experts.

In last month’s Safety & Compliance column in How2Power, “WBG Semiconductors Pose Safety And EMI Challenges In Motor Drive Applications,”[1]Kevin Parmenter made some assertions about the difficulties of using SiC, and to a lesser extent GaN, power semiconductors in large motor-drive applications. This commentary is a response to that article, showing that GaN can be a game changer in low-voltage integrated motors.

How2Power
February, 2021
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Gallium nitride (GaN) transistors have been in mass production for over 10 years. In their first few years of availability, the fast switching speed of the new devices – up to 10 times faster than the venerable Si MOSFET – was the main reason for designers to use GaN FETs. As the pricing of GaN devices normalized with the MOSFET, coupled with the expansion of a broad range of devices with different voltage ratings and power handling capabilities, much wider acceptance was realized in mainstream applications such as DC-DC converters for computers, motor drives for robots, and e-mobility bikes and scooters. The experience gained from the early adopters has led the way for later entrants into the GaN world get into production faster. This article is the first in a series of articles discussing three topics that can help power systems designers achieve the most out of their GaN-based designs at the lowest cost. The three topics are: (1) layout considerations; (2) thermal design for maximum power handling; and, (3) EMI reduction techniques for lowest cost.

Bodo’s Power Systems
January, 2021
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EPC introduces the 40 V, 3 milliohm EPC2055 eGaN^® FET, offering designers a device that is smaller, more efficient, and more reliable than currently available devices for high performance, space-constrained applications.

EL SEGUNDO, Calif. — December 2020 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2055 (3 mΩ, 40 V) eGaN FET. 

THIEF RIVER FALLS, Minnesota, USA – Digi-Key Electronics, the leading global electronic components distributor, announced that it has partnered with Efficient Power Conversion Corporation (EPC) to host a webinar on how to harness the power of eGaN FETS and ICs for motor drives. The webinar will take place on October 28 at 8 a.m. PST.

Register for the Harness the Power of GaN for Smaller, Lighter, More Precise Motor Drives webinar at EPC’s webinar page

新一代100 V 氮化鎵場效應電晶體（eGaN^® FET）是48 V_OUT同步整流、D類音訊放大器、汽車資訊娛樂及雷射雷達系統的理想功率元件。

增強型矽基氮化鎵（eGaN）功率場效應電晶體和積體電路的全球領導廠商宜普電源轉換公司（EPC）最新推出的兩款100 V eGaN FET（EPC2218及EPC2204），性能更高並且成本更低，可立即供貨。採用這些先進氮化鎵元件的應用非常廣闊，包括同步整流器、D類音訊放大器、汽車資訊娛樂系統、DC/DC轉換器（硬開關和諧振式）和面向全自動駕駛車輛、機械人及無人機的雷射雷達系統。

新一代200 V 氮化鎵場效應電晶體（eGaN^® FET）是48 V_OUT同步整流、D類音訊放大器、太陽能微型逆變器和功率優化器，以及多電平、高壓AC / DC轉換器的理想功率元件。

增強型矽基氮化鎵（eGaN）功率場效應電晶體和積體電路的全球領導廠商宜普電源轉換公司（EPC）最新推出的兩款200 V eGaN FET（EPC2215和EPC2207 ），性能更高而同時成本更低，目前已有供貨。採用這些領先氮化鎵元件的應用十分廣闊，包括D類音訊放大器、同步整流器、太陽能最大功率點追蹤器（MPPT）、DC/DC轉換器（硬開關和諧振式），以及多電平高壓轉換器。

氮化鎵技术幫助業界實現從使用內燃機汽車改為電動及智慧汽車的轉變。

Power Systems Design
2020年7月/8月刊 – 第39頁
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宜普電源轉換公司（EPC）推出全新積體電路(IC)系列的首個產品，為高功率密度應用諸如DC/DC轉換、電機驅動及D類放大器，提供更高性能及更小型化的解決方案。

宜普電源轉換公司（EPC）宣佈推出80 V、12.5 A的功率級積體電路，專為48 V DC/DC轉換而設計，用於具有高功率密度的運算應用及針對電動車的電機驅動器。

It’s okay to start using gallium-nitride (GaN) devices in your new designs. GaN transistors have become extremely popular in recent years. These wide-bandgap devices have been replacing LDMOS transistors in many power applications. For example, GaN devices are broadly being adopted for new RF power amplifiers used in cellular base stations, radar, satellites, and other high-frequency applications. In general, their ability to endure higher voltages and operate at frequencies well into the millimeter-wave (mmWave) range have them replacing traditional RF power transistors in most amplifier configurations.

Electronic Design
November, 2019
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為了使得客戶易於集成功率系統，宜普電源轉換公司（EPC）為客戶提供領導業界的氮化鎵功率元件的晶圓。

EPC公司宣佈推出領導業界的增強型氮化鎵元件的晶圓，使得客戶易於集成功率系統。EPC公司的氮化鎵場效應電晶體（eGaN^® FET）及積體電路一直以來都是以單個並包含錫條或錫球的晶片級元件出售。