EPC2012採用符合RoHS (有害物質限制) 條例的無鉛封裝，以增強其高頻開關性能。

宜普電源轉換公司(www.epc-co.com)宣佈推出第二代增強性能氮化鎵場效應電晶體(eGaN® FET)系列中的最新成員——EPC2012。EPC2012具有環保特性、無鉛、無鹵化物以及符合RoHS(有害物質限制)條例的要求。

EPC2012 FET是一款面積為1.6平方毫米的200VDS元件，RDS(ON)最大值是100mΩ，閘極電壓為5V。這種eGaN FET具有比第一代EPC1012 eGaN元件明顯更高的性能優勢。EPC2012的脈衝額定電流提高至15A(而EPC1012只有12A)，因此在較低閘極電壓時，其性能得以全面增強，而且由於提高了QGD/QGS比率，EPC2012還具有優異的dv/dt抗干擾性能。

EPC9004開發板可幫助設計工程師快速開發基於200V EPC2012的高頻開關型電源轉換系統。這是一種已製作好及易於連接的開發板，並備有完善歸檔的技術支援資料。

宜普電源轉換公司(EPC)宣佈推出EPC9004開發板，這種開發板能使客户更方便地使用宜普200V增強型氮化鎵(eGaN®)場效應電晶體設計產品，其應用範圍廣泛，如太陽能微型逆變器、D類音訊放大器、以太網供電(PoE)系統和同步整流器。

EL SEGUNDO, Calif. - March 15, 2011 - Efficient Power Conversion Corporation (www.epc-co.com) announce the introduction of the EPC2001 and EPC2015, two lead-free, RoHS-compliant (Restriction of Hazardous Substances) enhancement-mode gallium nitride on silicon (eGaN™) FETs.

The EPC2001 FET is a 100 V_DS device with a maximum R_DS(ON) of 7 milliohms with 5 V applied to the gate, and the EPC2015 is a 40 V_DS with a maximum R_DS(ON) of 4 milliohms. Both eGaN FETs provide significant performance advantages over similar state-of-the-art silicon-based power MOSFETs. Both devices have low on resistance, are smaller than silicon devices with similar resistance and have many times superior switching performance.

EL SEGUNDO, Calif-March 8, 2010 -Efficient Power Conversion Corporation (EPC) today introduced a family of enhancement mode power transistors based on its proprietary Gallium Nitride on Silicon technology.

Spanning a range of 40 Volts to 200 Volts, and 4 milliohms to 100 milliohms, these power transistors demonstrate significant performance advantages over state-of-the-art silicon-based power MOSFETs. EPC’s technology produces devices that are smaller than similar resistance silicon devices and have many times superior switching performance. Applications that benefit from this newly available performance are DC-DC power supplies, point-of-load converters, class D audio amplifiers, notebook and netbook computers, LED drive circuits, telecom base stations, and cell phones, to name just a few.