Efficient Power Conversion (EPC) publishes Phase-12 Reliability Report adding to the extensive knowledge found in their first eleven reports. With this report, EPC demonstrates field experience of 226 billion eGaN ^® device hours and a robustness capability unmatched by silicon power devices.

EL SEGUNDO, Calif.— January 2021 — EPC announces its Phase-12 Reliability Report, documenting the strategy used to achieve a remarkable field reliability record. eGaN devices have been in volume production for more than eleven years and have demonstrated very high reliability in over 226 billion hours of operation, most of which are in vehicles, LTE base stations, and satellites, to name just a few applications with rigorous operating conditions.

The combination of MPS (Monolithic Power Systems) controllers with ultra-efficient eGaN^® FETs from EPC (Efficient Power Conversion) enable best-in-class power density of 1700 W/in³ in high efficiency, low cost LLC DC-DC Conversion

欢迎您与氮化镓（GaN）技术专家一起在CES的EPC虚拟展台中，探索基于更高效、更小尺寸和更低成本的氮化镓场效应晶体管和集成电路的解决方案，如何增强消费电子产品的功能和性能。

宜普电源转换公司（EPC）宣布在1月11日至14日举行的全数字国际消费电子展（CES）展示其eGaN^®技术如何改变了消费电子应用的游戏规则并提高产品性能，包括全自动驾驶汽车、电动交通、无人机、机器人和48 V功率转换等应用。

An automotive application using GaN power devices in high volume is lidar(light detection and ranging) for autonomous vehicles. Lidar technology provides information about a vehicle’s surroundings, thus requiring high accuracy and reliability to ensure safety and performance. This article will discus a novel testing mechanism developed by EPC to test eGaN devices beyond the qualification requirements of the Automotive Electronics Council (AEC) for the specific use case of lidar.

Power Systems Design
December, 2020
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面向高功率密度且低成本的DC/DC转换，EPC9151功率模块利用EPC2152 ePower™功率级实现性能更高和尺寸更小的解决方案。

宜普电源转换公司（EPC）宣布推出EPC9151，这是一款300 W、双向、超小尺寸的1/16砖型DC/DC降压转换器模块，其尺寸仅为33 mm x 22.9 mm (1.3”x 0.9”)。EPC9151采用Microchip公司的数字信号控制器（dsPIC33CK）和EPC公司的 ePower™ 功率级集成电路（EPC2152），于300 W、48 V/12 V的转换器中，可以实现95％以上的效率，而且可以在这个可扩展的两相设计中增加相数，使得功率可以更高。

宽禁带（WBG）半导体诸如碳化硅（SiC）和氮化镓（GaN）是功率转换的技术前沿。它们为设计工程师带来具有全新的频谱、功率密度和外形尺寸的器件。

EDN Editorial Advisory Board
2020年12月
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宜普电源转换公司（EPC）是增强型硅基氮化镓（eGaN^®）功率场效应晶体管和集成电路的全球行业领先供应商，其首席执行官兼共同创办人Alex Lidow博士于2020全球电子成就奖（WEAA）评选中，荣获年度杰出贡献人物奖。

全球电子成就奖旨在评选并表彰对推动全球电子产业创新做出杰出贡献的企业和管理者，以及在业界处于领先地位的产品。由ASPENCORE全球资深产业分析师组成的评审委员会以及各地区（亚洲、美国、欧洲）网站用户群进行综合评定共同评选出得奖者。

Stefan Werkstetter appointed as New Director of Sales for EMEA to focus on assisting customers in the adoption of eGaN^® FETs and Integrated Circuits for applications including DC-DC, lidar, motor control, and other leading-edge power conversion systems

EL SEGUNDO, Calif. — November 2020 — To support the continued adoption of gallium nitride (GaN) FETs and Integrated Circuits in the European market, Efficient Power Conversion Corporation (EPC) is pleased to announce the appointment of Stefan Werkstetter as Director, Sales EMEA.

THIEF RIVER FALLS, Minnesota, USA – Digi-Key Electronics, the leading global electronic components distributor, announced that it has partnered with Efficient Power Conversion Corporation (EPC) to host a webinar on how to harness the power of eGaN FETS and ICs for motor drives. The webinar will take place on October 28 at 8 a.m. PST.

Register for the Harness the Power of GaN for Smaller, Lighter, More Precise Motor Drives webinar at EPC’s webinar page

Standard qualification testing for semiconductors typically involves stressing devices at-or-near the limits specified in their data sheets for a prolonged period of time, or for a certain number of cycles, with the goal of demonstrating zero failures. By testing parts to the point of failure, an understanding of the amount of margin beyond the data sheet limits can be developed, but more importantly, an understanding of the intrinsic failure mechanisms of the semiconductor can be found.

Bodo’s Power Systems
September, 2020
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增强型氮化镓（eGaN^®）技术使能新一代功率转换器，让转换器能够在更高的频率、更高的效率和前所未有的高功率密度下工作。 与硅MOSFET器件相比，eGaN器件还具有更优越的耐辐射性能。

Bodo’s Power Systems
2020年7月
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在超过四十年中，随着功率MOSFET器件的结构、技术和电路拓扑的创新，可满足不断增长的电力需求，因此改善了电源管理的效率和成本。 然而，在这新世纪的发展，随着硅功率MOSFET器件已经接近其理论极限，其改进速度已大为减慢。 与此同时，一种全新材料 - 氮化镓（GaN）- 正朝着新的理论性能领域的方向，稳步发展，其性能是老化的MOSFET器件的6,000倍，以及是目前市场的最优越GaN器件的300倍。

EETimes
2020年6月
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Brushless DC (BLDC) motors are a popular choice and are finding increasing application in robotics, drones, electric bicycles, and electric scooters. All these applications are particularly sensitive to size, weight, cost, and efficiency. A monolithically integrated GaN power stage is demonstrated powering a 400 W capable BLDC motor with low switching losses and significant savings in size and weight.

Power Electronics Europe
May, 2020
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Beyond just performance and cost improvement, the most significant opportunity for GaN technology to impact the power conversion market comes from its intrinsic ability to integrate multiple devices on the same substrate. GaN technology, as opposed to standard silicon IC technology, allows designers to implement monolithic power systems on a single chip in a more straightforward and cost-effective way.

Bodo’s Power Systems
May, 2020
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Starting on page 13 of this story, EPC discusses with David Morrison the latest GaN developments meant for APEC. Alex Lidow, CEO and co-founder of EPC, discussed his company’s new power stage ICs, their development of GaN-based reference designs using a multi-level topology and various demos that were originally bound for APEC.

How2Power Today
April, 2020
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EPC公司进一步更新了其广受欢迎的教育视频播客系列，上载了６个视频，针对器件可靠性及基于氮化镓场效应晶体管及集成电路的各种先进应用，包括面向人工智能的高功率密度运算应用，面向机械人、无人机及车载应用的激光雷达系统，以及Ｄ类放音频放大器。

宜普电源转换公司（EPC）更新了其广受欢迎的“如何使用氮化镓器件”的视频播客系列。刚刚上载的六个视频主要分享实用范例，目的是帮助设计师利用氮化镓技术设计面向人工智能服务器及超薄笔记本电脑的先进DC/DC转换器、面向机械人、无人机及全自动驾驶汽车的激光雷达系统，以及实现有可能是具有最高音质的音频系统。

中压氮化镓场效应晶体管（eGaN FET）的成本在三年前已经比等效额定功率MOSFET器件的成本更低。当时，EPC公司决心利用氮化镓场效应晶体管的性能及成本效益优势，积极研发及支持48 V输入或输出的应用。车用及计算机应用的48 V 转换逐渐成为全新的架构，也成为了功率系统的全新标准。

Power Systems Design
2020年3月31日
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继第一至第十阶段可靠性测试报告后，EPC公司的第十一阶段可靠性测试报告进一步丰富知识库。此报告对受测器件进行超过1230亿元件-小时应力测试，并且展示氮化镓器件的稳定性是硅功率器件所不能实现的。

EPC公司发布第十一阶段可靠性测试报告，与工程师分享受测器件如何实现优越的现场可靠性的策略 - 在广阔测试条件下，采用失效性测试器件（test-to-fail）的反复测试方法，从而知道如何构建更稳固的产品以达到应用所需，例如面向全自动驾驶车辆的激光雷达、LTE通信基站、汽车的车头灯及卫星等应用。

当硅技术已经到了性能极限，采用氮化镓器件的全新设计使得氮化镓技术得以继续普及。氮化镓器件的发展还是刚刚起步，它的性能将得以继续提升、集成电路也将会更具优势，以及将有更多全新的氮化镓产品推出市场。

Electronics Weekly
2019年12月
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This article discussed an oft forgotten or little-noticed part of the spacecraft enabling travel into outer space---power management in the space vehicle. Wide bandgap semiconductors like gallium nitride (GaN), silicon carbide (SiC), as well as diamond, are looking to be the most promising materials for future electronic components since the discovery of silicon. These technologies, depending upon their design, offer huge advantages in terms of power capability (DC and microwave), radiation insensitivity, high temperature and high frequency operation, optical properties and even low noise capability. Therefore, wide bandgap components are strategically important for the development of next generation space-borne systems. eGaN devices are quickly gaining momentum in the space industry and we will see many more applications for them by NASA and commercial contractors in future programs like Artemis and other programs in countries around the globe pursuing efforts into Space.

Power Systems Design
November, 2019
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