Communications GaN Applications

Envelope Tracking

High Frequency, Lower Power Consumption, Reduced System Costs

Envelope Tracking is a power supply technique for improving the energy efficiency of Radio Frequency Power Amplifiers by tracking the power demand as opposed to today’s fixed power systems. In cell phones use of envelope tracking means longer talk time, and in base stations it means smaller, less expensive amplifiers that consume far less energy and are less expensive to operate.

With switching transition speeds in the sub nano-second range, Gallium nitride power transistors are an enabling technology for both ET converters and wide bandwidth RF Power Amplifier designs. The ultra fast switching capabilities of GaN FETs enable the high frequency multi-phase buck converters and other power management topologies used in envelope tracking.

Communications GaN Envelope Tracking

Reference Designs

Envelope Tracking Reference Designs

Part Number Description VIN VOUT lOUT
(A)
Featured Product  
EPC9515 Demonstration Board
EPC9515AirFuel Category 4, 10 W Device Receive Board 5 V2 AEPC2019Buy Now
EPC9512 Demonstration Board
EPC9512AirFuel Class 4, 33 W ZVS Class D Amplifiermode dependent80 V1.8 AEPC8010
EPC2038
EPC2019
Buy Now
EPC9507 Demonstration Board
EPC9507ZVS Class-D Wireless Power Amplifier8 V - 36 VVIN6 AEPC2007C
EPC2038
Buy Now
EPC9065 Demonstration Board
EPC9065AirFuel Class 5, 60 W ZVS Class D Amplifier12 V (max VDD)80 V1.8 ARMSEPC2007C
EPC2038
Buy Now
EPC9112 Demonstration Board
EPC9112 High-Frequency, ZVS Class-D Wireless Power Evaluation Kit 3 50 W 6.78 MHz preset or user selectable EPC2007C
EPC2038
Buy Now

EPC’s application team is constantly working on new reference designs. If there is a requirement not met by the listed boards, please contact us via Ask a GaN Expert to discuss your application further.

Half-bridge development boards are available for quick evaluation of most eGaN FETs and ICs.

Products

Recommended Devices for Envelope Tracking

Part Number Status Configuration VDS
max
VGS
max
max
RDS(on)
(mΩ)
@5VGS
QG
typ
(nC)
QGS
typ
(nC)
QGD
typ
(nC)
QOSS
typ
(nC)
ID (A) Pulsed ID
(A)
Package
(mm)
EPC8004 Active Single 40 6 110 0.37 0.12 0.047 0.63 4 7.5 LGA 2.05 x 0.85 Buy Now
EPC2014C Active Single 40 6 16 2 0.7 0.3 4 10 60 LGA 1.7 x 1.1 Buy Now
EPC2055 Preferred Single 40 6 3.6 6.6 2.3 0.7 13 29 161 LGA 2.5 x 1.5 Buy Now
EPC8002 Active Single 65 6 480 0.133 0.057 0.015 0.344 2 2 LGA 2.05 x 0.85 Buy Now
EPC8009 Active Single 65 6 130 0.37 0.12 0.055 0.94 4 7.5 LGA 2.05 x 0.85 Buy Now
EPC2103 Preferred Half Bridge 80 6 5.5 6.5 2.2 1.1 30 30 195 BGA 6.05 x 2.3 Buy Now
EPC2103 Preferred Half Bridge 80 6 5.5 6.5 2.2 1.1 34 30 195 BGA 6.05 x 2.3 Buy Now
EPC2038 Active Single with Gate Diode 100 6 3300 0.044 0.02 0.004 0.134 0.5 0.5 BGA 0.9 x 0.9 Buy Now
EPC2038 Active Single with Gate Diode 6 BGA 0.9 x 0.9 Buy Now
EPC2037 Active Single 100 6 550 0.115 0.032 0.025 0.6 1.7 2.4 BGA 0.9 x 0.9 Buy Now
EPC8010 Active Single 100 6 160 0.36 0.13 0.06 2.2 4 7.5 LGA 2.05 x 0.85 Buy Now
EPC2051 Preferred Single 100 6 25 1.8 0.6 0.3 7.3 1.7 37 BGA 0.85 x 1.3 Buy Now
EPC2054 Preferred Single 200 6 43 2.9 0.9 0.3 15 3 32 BGA 1.3 x 1.3 Buy Now
EPC2207 Preferred Single 200 6 22 4.5 1.3 0.7 23 14 54 LGA 2.8 x 0.925 Buy Now
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