According to the latest report from Yole Développement, the GaN power industry is set for significant growth in the future.

Compound Semiconductor
June 12, 2014
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High frequency enhancement mode transistors, such as the EPC8000 series eGaN^® FETs from EPC, have been widely available since September 2013 and enable simplified designs at RF frequencies. In this installment, we present the RF characteristics of the EPC8000 series devices and show their implementation in a pulsed class A amplifier. The amplifier is pulsed to allow operation within the thermal operating limits of the device, since RF device power dissipation is typically on the same order of magnitude as the RF power delivered, unlike switching devices, such as the EPC8000 series, that operate well above 95 % efficiency. The EPC8000 series FETs, designed originally for switching power conversion applications, otherwise exhibit excellent RF characteristics and in conclusion will be compared with similar specified LDMOS.

EEWeb
By: Alex Lidow
May 29, 2014

硅半导体技术的供应链已经投放超过千亿美元，使得它难以置信地极具效率。制造新兴的高性能氮化镓晶体管如何在这方面可与硅器件匹敌？答案很简单，我们利用硅器件的供应链来制造氮化镓器件，因此可大大降低氮化镓晶体管的制造成本。

Power Systems Design
作者：Alex Lidow
2014年 5月 27日

应用于功率转换领域的硅器件的性能已接近其理论极限。氮化镓（GaN）及碳化硅（SiC）将取代大部分市值120亿美元的硅功率MOSFET市场。目前已经有产品投产，其性能比硅器件的理论性能极限好5至10倍。

杂志：Bodo’s Power Systems
作者：Alex Lidow
2014年5月

在过去几年间，无线电源传送应用逐渐流行，尤其是替便携式装置充电的应用。宜普公司在本章讨论使用松散耦合线圈、高度谐振的无线电源解决方案，符合A4WP标准并适合工作在免执照、給工業、科學及醫療用电器设备（ISM）使用的6.78 MHz或13.56 MHz頻率。

杂志：Bodo’s Power Systems
作者：Alex Lidow博士及Michael De Rooij博士
2014年5月

This column evaluated the ability to parallel eGaN^® FETs for higher output current applications by addressing the challenges facing paralleling high speed, low parasitic devices, and demonstrated an improved paralleling technique. For experimental verification of this design method, four parallel half bridges in an optimized layout were operated as a 48 V to 12 V, 480 W, 300 kHz, 40 A buck converter, and achieved efficiencies above 96.5%, from 35% to 100% load. The design method achieved superior electrical and thermal performance compared to conventional paralleling methods and demonstrated that high speed GaN devices can be effectively paralleled for higher current operation.

EEWeb
By: Alex Lidow
April, 2014

在德州Fort Worth举行的APEC 2014年度IEEE功率电力电子研讨会已经完满结束。 该研讨会的多个议题让与会者留下深刻印象，其中一个是经历了饶具趣味的进程的氮化镓（GaN）功率晶体管。详情请访问 http://electronicdesign.com/blog/pmbus-gan-and-more-dominate-apec-2014。

Electronic Design杂志
2014年3月

EPC公司Michael de Rooij与Power Systems Design 杂志编辑Alix Paultre分享无线电源传送解决方案。

Power Systems Design杂志
2014年3月
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由于德国航空太空中心的机械人及机械电子研究院（Robotics and Mechatronics Institute ）对改善传感器及功率电子的兴趣很大，我们利用开发全新机械人的机会来评估宜普电源转换公司（EPC）的全新增强型氮化镓场效应晶体管技术并与我们目前最优秀的逆变器设计进行比较。

杂志 ：Bodo’s Power Systems
作者：德国航空太空中心 (DLR) Robin Gruber
日期：2014年3月

The quality of sound reproduced by an audio amplifier, measured by critical performance parameters such as THD (Total Harmonic Distortion), damping factor (DF), and T-IMD (Inter-modulation Distortion), is influenced by the characteristics of the switching transistors used. Class-D audio amplifiers typically use power MOSFETs, however, lower conduction losses, faster switching speed, and zero reverse recovery losses provided by enhancement-mode GaN (eGaN) FETs enable a significant increase in the sonic quality, and higher efficiency that can eliminate heatsinks. The result is a system with better sound quality in a smaller form factor that can be built at a lower cost.

EEWeb
By: Alex Lidow
February, 2014

Enhancement-mode gallium nitride transistors have been commercially available for over four years and have infiltrated many applications previously monopolized by the aging silicon power MOSFET. There are many benefits derived from the latest generation eGaN® FETs in new emerging applications such as highly resonant wireless power transfer, RF envelope tracking, and class-D audio. This article will examine the rapidly evolving trend of conversion from power MOSFETs to gallium nitride transistors in these new applications.

Power Pulse
By: Alex Lidow
February, 2014

本章展示氮化镓场效应晶体管如何推动具高度谐振、松散耦合性、工作在6.78 MHz ISM频带的无线电源传送技术，实现高效无线能源传送，并与工程师分享使用电压模式D类及E类方法的范例。

EEWeb
作者：Alex Lidow
日期：2014年1月

Examining new products released by: Texas Instruments, Analog Devices, Linear Technology, Maxim-Integrated, Intersil, Fairchild, EPC, and IR, Don Tuite finds a common thread: the companies’ products are doing the heavy lifting for their customers.

Electronic Design
Don Tuite
January 6, 2014

本章我们回到讨论硬开关转换器，但不同的是晶体管在更高频率的条件下工作，超越硅技术的实际限制。

EEWeb
作者： Alex Lidow
2013年12月

在开关频率10 MHz或以上，电源转换需要具备高速开关的晶体管并配备在高频工作的封装。相比日渐老龄化的功率MOSFET器件，由于氮化镓场效应晶体管（eGaN® FET）提供无可匹敌的器件性能及封装，因此可以在高频时提高电源转换效率。

Bodo’s Power Systems
客席编辑： Alex Lidow
2013年11月

增强型氮化镓场效应晶体管商用化已经超过四年，并不断渗透及进驻本来被硅功率MOSFET器件所垄断的应用领域。

Power Pulse
作者：Alex Lidow
2013年10月

With the introduction of this family of eGaN® FETs, power systems and RF designers now have access to high performance gallium nitride power transistors enabling innovative designs not achievable with silicon.

October, 2013
Bodo's Power Systems

我们在本章讨论在隔离型直流-直流功率转换中使用更复杂的硬开关转换器。

EEWeb
作者：Alex Lidow
2013年10月

封装的缺点是增加功率MOSFET器件的尺寸及成本，并增加阻抗和电感，从而降低器件的性能。宜普电源转换公司Alex Lidow辩说最有效的解决方案是不用封装，使 氮化镓高电子迁移率晶体管与等效硅器件相比，具有相同成本的优势。

杂志：Compound Semiconductor
日期：２０１３年6月

在高频降压转换器配备最优的版图，使得在1MHz 频率下开关时器件可实现96%以上的效率。

EEWeb
日期：2013年9月
作者：Alex Lidow