当硅技术已经到了性能极限，采用氮化镓器件的全新设计使得氮化镓技术得以继续普及。氮化镓器件的发展还是刚刚起步，它的性能将得以继续提升、集成电路也将会更具优势，以及将有更多全新的氮化镓产品推出市场。

Electronics Weekly
2019年12月
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This article discussed an oft forgotten or little-noticed part of the spacecraft enabling travel into outer space---power management in the space vehicle. Wide bandgap semiconductors like gallium nitride (GaN), silicon carbide (SiC), as well as diamond, are looking to be the most promising materials for future electronic components since the discovery of silicon. These technologies, depending upon their design, offer huge advantages in terms of power capability (DC and microwave), radiation insensitivity, high temperature and high frequency operation, optical properties and even low noise capability. Therefore, wide bandgap components are strategically important for the development of next generation space-borne systems. eGaN devices are quickly gaining momentum in the space industry and we will see many more applications for them by NASA and commercial contractors in future programs like Artemis and other programs in countries around the globe pursuing efforts into Space.

Power Systems Design
November, 2019
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Ahead of December’s Power Conference in Munich, Bodo Arlt took the opportunity to get an insight into Alex Lidow’s thoughts on where the GaN market is now and where he sees the potential applications for the future. Dr. Lidow is the CEO and Co-founder of Efficient Power Conversion (EPC).

Bodo’s Power Systems
November, 2019
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氮化镓（GaN）及碳化硅（SiC）器件的价格下调，对客户而言，更为吸引。多家供应商推出基于氮化镓及碳化硅的功率半导体，摩拳擦掌，正在爆发新一轮的半导体大战，全速进攻传统硅基器件的市场份额。

Semiconductor Engineering
2019年10月
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氮化镓技术为业界实现以前不可能达到的目标。EPC公司的Alex Lidow阐析医疗护理如何更好地利用氮化镓技术，实现重大的改进。

Electronic Specifier
2019年8月
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GaN transistors, with favorable figures of merit (FOM) for 48 V applications, can provide a reduction in size, weight, and bill of material costs. This article presents a five-phase, fully regulated, bidirectional 48 V to 12 V DC-DC converter. An advancedthermalmanagement solution suitable for use with eGaN FETs results in a system that can provide 3kW of power at an efficiency exceeding 97.5% into a 14.5 V battery.

Power Systems Design
July, 2019
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Small satellites bring a more cost-effective approach to low-Earth-orbit (LEO) missions, helping to deliver low-cost internet access across the globe. For this application, GaN FETs partnered with a radiation tolerant pulse width modulation controller and GaN fet driver allow more efficient switching, higher frequency operation, reduced gate drive voltage and smaller solution sizes compared to the traditional silicon counterparts.

Electronics Weekly
July, 2019
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宜普电源转换公司的基于氮化镓的器件乃前沿技术。在本视频，宜普公司的首席执行官Alex Lidow于APEC展会现场与 Alix Paultre分享多个design in项目，从而展示基于氮化镓的器件的各种优势。

宜普电源转换公司首席执行官兼共同创办人Alex Lidow于APEC 2019展览会的Ridley Engineering展览摊位进行演讲，题目是“硅已经死亡”。

In this episode of PSDtv Alex Lidow, Chief Executive Officer and Co-Founder of Efficient Power Conversion (EPC) is at APEC 2019 in Anaheim and discusses why their GaN on Silicon devices make Silicon now dead.

PSDtv
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With the power architecture transition from a 12 V to a 48 V bus power distribution in modern data centers, there is an increased demand to improve 48 V power conversion efficiency and power density. In this context, DC-DC converters designed using eGaN^® FETs and ICs provide a high efficiency and high power density solution. Additionally, with the advent of 48 V power systems in mild-hybrid, hybrid and plug-in hybrid electric vehicles, GaN transistors can provide a reduction in size, weight, and Bill of Materials (BOM) cost.

Power Systems Design
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专为高效电源转换而设的氮化镓功率晶体管已经投产7年多了。全新的市场例如激光雷达、包络跟踪及无线电源，都成为氮化镓的新兴市场，因为氮化镓具备超高速的的开关速度。这些市场使得氮化镓产品得以量产、成本更低及具备优越的可靠性。这些优势为比较保守的设计工程师提供更大的利好条件，因此，DC/DC转换器工程师、AC/DC转换器及车载应用工程师都开始对氮化镓器件进行评估。要把120亿美元的硅基MOSFET市场转为氮化镓市场，还有什么壁垒呢？就是信心的问题。设计工程师、制造工程师、采购经理及管理层都必需对氮化镓技术的优势有足够的信心、相信氮化镓技术可以解决设计师对采用全新技术的风险的疑问。让我们看看3个主要构成风险的因素：供应链、成本及产品的可靠性。

IEEE Spectrum
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eGaN FET（及目前的集成电路）之可以应用于全自动车辆的激光雷达系统，以及全自动电动赛车，是因为这些器件可以实现高很多的分辨率（由于具备超短激光脉冲）、更快速的图像速度（由于短激光脉冲），及可以准确地看得更远（由于在超高电流时可以实现快速激光脉冲）。

Planet Analog
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For LiDAR systems to meet ever-higher performance specs, they must perform fast switching of high-current pulses, which is where a gallium-nitride power switch can step in to help.

Electronic Design
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LIDAR is presently a subject of great interest, primarily due to its widespread adoption in autonomous navigation systems for vehicles, robots, drones, and other mobile machines. eGaN devices are one of the main factors in making affordable, high performance LIDAR possible in a small form factor thus further fueling the LIDAR revolution.

EDN
By John Glaser
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In recent years, GaN-based power conversion has increased in popularity due to the inherent benefits of eGaN FETs over conventional Si transistors. Migrating a converter design from Si to GaN offers many system-level improvements, which require consideration of all the components in that system. This trend has subsequently spurred a growth in the ecosystem of power electronics that support GaN-based designs.

Power Systems Designs
By Edward A. Jones, Michael de Rooij, and David Reusch
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As GaN-on-Si becomes more common in DC-DC converter designs, questions often arise from experienced designers about the impact of the unique characteristics of GaN transistors when used as synchronous rectifiers (SRs). In particular, the third quadrant off-state characteristics, better known as “body diode” conduction in Si MOSFETs, which is activated during converter dead-time, is of interest. For this article, the focus will be on the similarities and differences of Si MOSFETs and eGaN^® FETs when operated as a “body diode” and outline their relative advantages and disadvantages.

Bodo’s Power Systems
By David Reusch & John Glaser
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The increase in switching speed offered by GaN transistors requires good measurement technology, as well as good techniques to capture important details of high-speed waveforms. This article focuses on how to leverage the measurement equipment for the user’s requirement and measurement techniques to accurately evaluate high performance GaN transistors. The article also evaluates high bandwidth differential probes for use with non-ground-referenced waveforms.

EDN Network
By Suvankar Biswas , David Reusch & Michael de Rooij
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Wireless power charging was a big point of discussion with a number of different solutions on the APEC 2018 exhibit floor. The following wireless charging solutions had unique aspects in their strategies; let’s take a look at what I saw over the last few days.

EDN Network
By Steve Taranovich
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In this video Alex Lidow, Founder and CEO of EPC, talks to Alix Paultre, Editor-in-Chief of Power Electronics News, about the various demonstrations of GaN-based solutions at the EPC booth at APEC 2018 in San Antonio, Texas. The high-frequency operation and other advanced performance advantages over Silicon enables GaN to empower applications from LIDAR to wireless power transmission. The booth exhibits include examples of these, from a real-time LIDAR demonstration to a running "wireless desk".