EPC技术文章

Using GaN FETs to Burst Through 5 kW/in3 in a 48 V to 12 V LLC Converter

LLC resonant converters have emerged as the preferred topology for an intermediate 48 V to 12 V conversion due to their high efficiency, high power density and good dynamic response. The outstanding performance resulting from the combination of this topology with GaN transistors has been demonstrated in the past. This article presents how the newest generation of GaN devices, such as those from EPC, continues to push the envelope even further.

Bodo’s Power Systems
November, 2023
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基于氮化镓器件的功率转换解决方案着眼于下一代应用

宜普电源转换公司(EPC)是增强型氮化镓 (GaN) FET 和 IC产品的领导者,在纽伦堡举行的 PCIM Europe 2023展会上分享了关于氮化镓技术的发展和其应用的演示。 我们与该公司的联合创始人兼首席执行官 Alex Lidow 就电力电子行业和氮化镓技术对行业的影响进行了深度交流。

Electronic Design
2023年5月
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GaN-based Design of a 2 kW 48 V/12 V Bi-directional Power Module for 48 V Mild Hybrid Electric Vehicles

With the increase in government mandates to combat climate change, automakers are moving quickly to leverage new technology to respond by switching from the internal combustion engine to electric-drive vehicles. This article presents the design of a 2 kW, two-phase 48 V/12 V bi-directional converter using GaN FETs that achieves 96% efficiency and is targeted for the 48 V mild hybrid system.

PSD North America
March, 2023
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Bi-directional power module for 48 V mild hybrid electric vehicles

An exploration of a GaN-based design of a 2 kW 48V/12V bi-directional power module for 48 V mild hybrid electric vehicles.

Electronics Today
January, 2023
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GaN’s Evolution from Science Project to Mainstream Power Conductor

Power-conversion technologies are experiencing the first tectonic shift since the move from bipolar to MOS. That shift, of course, is due to the viral adoption of wide-bandgap power devices. At this point, GaN is more than a specialty technology; it is a broad-scale replacement for silicon MOSFETs in applications ranging from 30 V up to 650 V — a multibillion-dollar market.

Power Electronics News
December, 2022
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eGaN FETs Enable More Than 4-kW/in3 Power Density for 48 V to 12 V Power Conversion

Growing computational power and miniaturization of electronics in computing and data centers is increasingly putting pressure on 48-V power delivery and conversion systems. High-efficiency and high-power–density converters enable a reduction in power losses at the system level while allowing smaller form factors. In this context, LLC resonant topologies combined with GaN technology succeed to deliver outstanding performance, as it has been demonstrated with multiple examples. This article will show the key design parameters and components to achieve beyond 4 kW/in3 of power density in a 48-V to 12-V LLC converter using eGaN® FETs.

Power Electronics News
December, 2022
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GaN Power Behind Mild Hybrid Vehicle Electrification

With increasing legislation aimed at higher fuel efficiency standards, vehicle manufacturers are searching for cost-effective solutions to meet these demands while still providing the power required for ever-increasing electronically driven functions.  This article details a bi-directional high power converter for mild-hybrid cars and battery backup units using GaN FETs to achieve efficiency exceeding 96% when converting from 48 V to 14.3 V at 500 kHz switching frequency.

Power Electronics Europe
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企业采访 - 宜普电源转换公司

Easy Engineering媒体采访了宜普电源转换公司(EPC)的市场营销总监Renee Yawger,了解目前氮化镓器件应用的情况和氮化镓技术的未来。

Easy Engineering
2022年5月
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从氮化镓器件的行为确定其性能的模型

氮化镓场效应晶体管和集成电路的用户现在有了一个工具来确定应用中需要的降额和降额设计中应考虑的因素。宜普公司开发了一个基于第一原理的物理模型,以解释氮化镓晶体管在硬开关时,导通电阻如何上升。本文提供了两个同步整流应用实例的演示。

Electronic Specifier
2022年5月
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氮化镓技术提高数据中心的功率密度

当数据中心的服务器转用48 V架构,氮化镓晶体管可以替代目前的硅MOSFET器件,性能得以进一步提升和成本可以更低。

Data Center Dynamics
2022年3月
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High Performance 1 kW per Phase 48 V/12 V Converter Using GaN ePower Stage

Automotive 48 V/12 V converters are essential in modern hybrid electric vehicles, as the energy is exchanged between the 48 V and 12 V buses. This two-voltage system accommodates legacy 12 V systems and provides higher power for 48V to loads such as vacuum and water pumps, electric super chargers, steering, and audio systems. Among all the requirements for the 48 V/12 V converter, efficiency, power density, size and cost are on the top of the list. This article addresses these design criteria by employing the GaN ePower™ Stage, EPC23101, and compares it with a previous design using discrete EPC2206 devices.

Bodo’s Power Systems
March, 2022
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面向e-Mobility应用的DC/DC参考设计

由氮化镓技术专家 EPC 与 MPS 合作开发的双向转换器可实现97%的峰值效率。

EETimes
2022年2月
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Electrifying Power Hungry Loads

This article presents the design and performance of an automotive buck/reverse-boost converter with GaN for efficient 48 V power distribution.

Electronics Today
December/January Edition
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Automotive Buck/Reverse-Boost Converter with GaN for Efficient 48 V Power Distribution

Demonstrating the design of a bi-directional DC-DC converter for automotive 48 V power distribution, showing how GaN technology is a powerful enabler for efficient electrification. The trend towards increasing electrification in the automotive industry enables car makers both to deliver new innovations to market cost-effectively and to meet increasingly stringent emissions legislation. Raising the vehicle’s main bus voltage to 48 V helps meet the demands of power-hungry systems such as the start-stop motor/generator of a mild hybrid vehicle, as well as loads such as electric power steering, electric supercharging, and vacuum and water pumps.

Bodo’s Power Systems
December, 2021
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面向高功率密度应用的 ePower 芯片组系列被选为Bodo‘s Power Systems “二月卓越产品”

EPC公司推出了100 V、65 A 集成电路芯片组,专为 48 V DC/DC 转换而设计,用于高密度计算应用,以及用于电动汽车、机器人和无人机的 48 V BLDC电机驱动器。EPC23101 eGaN IC 配合 EPC2302 eGaN FET成为ePower芯片组,其最大耐受电压为 100 V,提供高达 65 A 的负载电流,开关速度大于 1 MHz。

Bodo’s Power Systems
2022 年 2 月
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Power Bricks Get an Efficiency Boost with GaN

The design of an LLC resonant converter illustrates how eGaN FETs can shrink the physical size of modern supply circuitry.

Power Electronic Tips
October, 2021
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应对用于超薄计算应用的超薄并具高功率密度的 48 V DC/DC 转换器的电源和磁性设计挑战

在过去十年中,计算机、显示器、智能手机和其他消费电子系统变得更薄,同时功能也变得更强大。因此,市场对具有更高功率密度的更纤薄电源解决方案的需求不断增加。本文研究了额定功率为 250 W且超薄的48 V / 20 V转换器,它可以采用各种非隔离型 DC/DC 降压拓扑的可行性。我们研究了各种非隔离型拓扑的优缺点,从而了解拓扑如何影响功率晶体管和磁性元件的选择,特别是电感器,因为这两个器件产生转换器的大部分损耗。本文还详细分析了为这些应用设计薄型电感器所面对的挑战,包括电感器损耗的因素、电感器尺寸和设计权衡,包括对 EMI 的影响。我们是以选择、构建和测试了超薄多电平转换器拓扑。从该转换器获得的实验结果,用于进一步优化操作设置和元件的选择,从而实现超过 98%的峰值效率。

EPC公司Michael de Rooij
Würth Elektronik 公司Quentin Laidebeur

IEEE Power Electronics Magazine
2021年9月
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采用 eGaN FET 的高效、高密度1/8 砖1 kW LLC 谐振转换器

随着数据处理基础设施的持续快速增长,市场要求在最小的占板面积内提供更高的功率。

Power Systems Design
2021年9月
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Using GaN FETs can be as simple as using Silicon FETs – an example in 48V systems

In this article, the author introduces a GaN FET compatible analog controller that yields a low bill-of-material count and give designers the ability to design a synchronous buck converter in the same simple way as using silicon FETs, and offers superior performance for 48 V power systems.

Power Electronics News
April, 2021
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GaN for High Density Servers

Gallium nitride (GaN) devices offer performance in a small form factor, increasing the efficiency, and reducing the system cost for 48 V power conversion applications. They have been adopted in high volumes in high density computing, as well as many new automotive power system designs.

Electronic Specifier
February, 2021
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