這些新一代氮化鎵場效應電晶體(eGaN FET) 滿足了目前電動出行（eMobility）、交付和物流機器人，以及無人機市場所需的緊凑型 BLDC 電機驅動器和具成本效益、高解析度的飛行時間（ToF）的新需求。

宜普電源轉換公司（EPC）是增强型矽基氮化鎵 (eGaN) 功率電晶體和積體電路的全球領導者。新推的EPC2065 和 EPC2054具備更高的性能和更低的成本等優勢。

Efficient Power Conversion (EPC) introduces a new family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions in critical spaceborne and other high reliability environments.

EL SEGUNDO, Calif.— June 2021 — EPC announces the introduction of a new family of radiation-hardened gallium nitride transistors and integrated circuits. With higher breakdown strength, faster switching speed, higher thermal conductivity and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices. The lower resistance and gate charge enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions. Gallium nitride is also inherently radiation tolerant, making GaN-based devices a reliable, higher performing power transistor option for space applications.

宜普電源轉換公司(EPC) 的氮化鎵專家將在APEC展示最新的增强型氮化鎵場效應電晶體和積體電路的發展，並探討氮化鎵技術的卓越性能如何改變了具高功率密度的運算、車用、電動運輸和機器人等應用的電源供電。

EPC團隊將在6月14日至17 日舉行的APEC虛擬會議暨博覽會上，進行多個關於氮化鎵 (GaN) 技術和應用的技術演示和網絡研討會，並且提供相關的教育教程。此外，EPC公司也參加了此次活動的虛擬展覽，展示出其客戶的終端產品中採用了最新的 eGaN FET和積體電路，從而推動了氮化鎵（eGaN）技術的普及。

Efficient Power Conversion (EPC) will showcase the company’s latest enhancement-mode gallium nitride-based FETs and ICs demonstrating how GaN technology’s superior performance is transforming power delivery for automotive, computing, and robotics at the PCIM Europe 2021 Digital Days.

EL SEGUNDO, Calif.— April 2021 — The EPC team will be delivering two technical presentations, an educational tutorial, an exhibitor webinar, and participating in panel discussions on gallium nitride (GaN) technology and applications at the upcoming PCIM Europe 2021 Digital Days, May 3 – 7. In addition, the company will participate in the event’s virtual exhibition, showing its latest eGaN FETs and ICs in customers’ end products that are rapidly adopting eGaN^® technology.

宜普電源轉換公司（EPC）宣佈擴大氮化鎵（GaN）積體電路（IC）系列，實現性能更高、更小巧且採用飛行時間（ToF）技術的雷射雷達應用，包括機器人、無人機、3D感測器，遊戲和自動駕駛汽車等應用。

宜普電源轉換公司（EPC）宣佈推出雷射驅動器IC（EPC21603），在單個晶片上集成了40 V、10 A 場效應電晶體、閘極驅動器和LVDS邏輯電平輸入，面向飛行時間（ToF）雷射雷達系統，用於機器人、無人機、擴增實境和遊戲等應用。

The ultra-fast transition EPC2034C eGaN^® FETs used on the EPC9150 enables high current pulses up to 220 A and pulse widths under 3 ns, thus allowing a lidar system to see farther, faster, and better.

EL SEGUNDO, Calif.— March 2021 — Efficient Power Conversion  (EPC) announces the availability of the EPC9150, a 200 V, high current, pulsed-laser diode driver demonstration board. In a lidar system, used to create 3-D maps for autonomous vehicle applications, speed and accuracy of object detection is critical. As demonstrated by this board, the rapid transition capability of the EPC2034C eGaN FETs provide power pulses to drive the laser diodes, VCSELs or LEDs up to ten times faster than an equivalent MOSFET and in a small fraction of the area, energy, and cost. Thus, enhancing the overall performance, including accuracy, precision, and processing speed as well as the price of a lidar system.

New family of laser driver IC products will enable faster adoption and increased ubiquity of ToF solutions across a wider array of end-user applications.

How2Power
March, 2021
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Efficient Power Conversion (EPC) expands AEC Q101 product family with the addition of the EPC2219, 65 V gallium nitride transistor with integrated reverse gate clamp diode optimized for high resolution lidar systems.

EL SEGUNDO, Calif.— March 2021 — EPC announces successful AEC Q101 qualification of the 65 V EPC2219 designed for lidar systems in the automotive industry and other harsh environments. 

宜普電源轉換公司（EPC）推出氮化鎵（GaN）積體電路（IC）系列，實現性能更高、更小巧且採用飛行時間（ToF）技術的光達應用，包括機器人、無人機、3D感測器和自動駕駛車輛等應用。

宜普電源轉換公司（EPC）宣佈推出雷射驅動器IC(EPC21601)，在單個晶片上集成了40 V、10 A 場效應電晶體、閘極驅動器和3.3 V邏輯電平輸入，面向採用飛時測距（ToF）技術的光達系統，用於機器人、監控保安系統、無人機、全自動駕駛車輛和吸塵器。

Efficient Power Conversion (EPC) publishes Phase-12 Reliability Report adding to the extensive knowledge found in their first eleven reports. With this report, EPC demonstrates field experience of 226 billion eGaN ^® device hours and a robustness capability unmatched by silicon power devices.

EL SEGUNDO, Calif.— January 2021 — EPC announces its Phase-12 Reliability Report, documenting the strategy used to achieve a remarkable field reliability record. eGaN devices have been in volume production for more than eleven years and have demonstrated very high reliability in over 226 billion hours of operation, most of which are in vehicles, LTE base stations, and satellites, to name just a few applications with rigorous operating conditions.

歡迎您與氮化鎵（GaN）技術專家一起在CES的EPC虛擬展臺中，探索基於更高效、更小尺寸和更低成本的氮化鎵場效應電晶體和積體電路的解決方案，如何增強消費電子產品的功能和性能。

宜普電源轉換公司（EPC）宣佈在1月11日至14日舉行的全數位國際消費電子展（CES）展示其eGaN^®技術如何改變了消費電子應用的遊戲規則，並且提高產品性能，包括全自動駕駛車輛、電動交通運輸、無人機、機器人和48 V電源轉換等應用。

An automotive application using GaN power devices in high volume is lidar(light detection and ranging) for autonomous vehicles. Lidar technology provides information about a vehicle’s surroundings, thus requiring high accuracy and reliability to ensure safety and performance. This article will discus a novel testing mechanism developed by EPC to test eGaN devices beyond the qualification requirements of the Automotive Electronics Council (AEC) for the specific use case of lidar.

Power Systems Design
December, 2020
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Gallium nitride FETs have continued to gain traction in many power electronic applications, but GaN technology is still in the early part of its life cycle. While there is much room to improve basic FET performance figures of merit an even more promising avenue is the development of GaN power ICs.

Bodo’s Power Systems
November, 2020
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新一代100 V 氮化鎵場效應電晶體（eGaN^® FET）是48 V_OUT同步整流、D類音訊放大器、汽車資訊娛樂及雷射雷達系統的理想功率元件。

增強型矽基氮化鎵（eGaN）功率場效應電晶體和積體電路的全球領導廠商宜普電源轉換公司（EPC）最新推出的兩款100 V eGaN FET（EPC2218及EPC2204），性能更高並且成本更低，可立即供貨。採用這些先進氮化鎵元件的應用非常廣闊，包括同步整流器、D類音訊放大器、汽車資訊娛樂系統、DC/DC轉換器（硬開關和諧振式）和面向全自動駕駛車輛、機械人及無人機的雷射雷達系統。

矽功率MOSFET未能跟上電力電子行業的發展變化，而效率、功率密度和更小的外型尺寸等因素是行業的主要需求。 矽MOSFET元件的性能已達到其理論極限，並且由於電路板的空間非常寶貴，因此功率系統設計人員必需找出替代方案。 氮化鎵（GaN）元件是一種高電子遷移率電晶體（HEMT），這種半導體正為新興應用不斷增值。

EETimes
2020年8月
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Gallium nitride (GaN) power devices have been in volume production since March 2010 and have established a remarkable field-reliability record. An automotive application using GaN power devices in high volume is lidar (light detection and ranging) for autonomous vehicles. Lidar technology provides information about a vehicle’s surroundings, thus requiring high accuracy and reliability to ensure safety and performance. This article will discuss a novel testing mechanism developed by Efficient Power Conversion (EPC) to test eGaN devices beyond the qualification requirements of the Automotive Electronics Council (AEC) for the specific use case of lidar.

eeNews Europe
July 30, 2020
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Efficient Power Conversion (EPC) will showcase the company’s latest ePower™ Stage IC family of products showing how GaN technology’s superior performance is transforming power delivery for computing, communications, robotics, and transportation at the PCIM Europe 2020 Digital Days.

EL SEGUNDO, Calif.— June 2020 — The EPC team will be delivering three technical presentations and participating in two panel discussions on gallium nitride (GaN) technology and applications at the upcoming PCIM Europe 2020 Digital Days, July 7 – 8. In addition, the company will participate in the event’s virtual exhibit, showing its latest eGaN FETs and ICs in customers’ end products that are rapidly adopting eGaN technology.

EPC公司進一步更新了其廣受歡迎的教育視頻播客系列，上載了６個影片，針對元件可靠性及基於氮化鎵場效應電晶體及積體電路的各種先進應用，包括面向人工智慧的高功率密度運算應用，面向機械人、無人機及車載應用的雷射雷達系統，以及Ｄ類放音訊放大器。

宜普電源轉換公司（EPC）更新了其廣受歡迎的“如何使用氮化鎵元件”的影片播客系列。剛剛上載的六個影片主要分享實用範例，目的是幫助設計師利用氮化鎵技術設計面向人工智慧伺服器及超薄筆記型電腦的先進DC/DC轉換器、面向機械人、無人機及自動駕駛車輛的雷射雷達系統，以及實現有可能是具有最高音質的音訊系統。

知名企業領袖 - 宜普電源轉換公司（EPC）首席執行官Alex Lidow於2009年在市場推出第一個氮化鎵電晶體。 經過了10年的氮化鎵產品銷售，DESIGN & ELEKTRONIK 雜誌編輯Ralf Higgelke與Alex會面並談論氮化鎵技術的最新發展。

DESIGN & ELEKTRONIK雜誌
2020年2月20日
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EPC9144演示板內的車規級EPC2216氮化鎵場效應電晶體（eGaN^® FET）可支援大電流納秒脈衝的應用，提供高速的大電流脈衝 – 電流可高達28 A、脈寬则可低至1.2納秒，從而使得飛行時間及flash雷射雷達系統更準確、更精確及更快速。

宜普電源轉換公司（EPC）宣佈推出15 V、28 A大電流脈衝雷射二極體驅動電路板（EPC9144）。