雜誌:Bodo's Power Systems
作者:宜普公司產品品質及可靠性總監馬豔萍博士

摘要:
本文討論了相比功率MOSFET器件,氮化鎵場效應電晶體具有高電子密度和非常低的溫度系數,使它能夠在目前的高性能應用中具有明顯的優勢。 電子密度產生優異的RDS(ON),而正溫度系數防止在晶片內產生發熱點,致使氮化鎵場效應電晶體可以在安全工作區域工作時具有更卓越的性能而不會發生故障。

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氮化鎵場效應電晶體具有正溫度係數, 因而在安全工作區域的電壓及電流等條件的範圍下,它具有更卓越的性能而能夠解決矽MOSFET器件在性能上的限制。

宜普公司將發佈所有氮化鎵場效應電晶體在安全工作區域的資料。該器件具有正溫度系數, 因而在安全工作區域範圍內只有一個小區域受限於器件的平均溫度。

作者:宜普公司應用總監David Reusch 博士
雜誌:Power Electronics Technology

在過去的章節中,我們討論了氮化鎵場效應電晶體于硬開關、隔離及非隔離型轉換器應用中所具的優勢。 在第九部分,我們將展示氮化鎵器件在軟開關的應用中,相比目前的功率MOSFET器件,它可以改善效率及輸出功率密度。

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作者：宜普公司首席執行長Alex Lidow博士
日期：在2012年7月2日刊載於Power Pulse.NET網站

大約在2005年Eudyna 與Nitronex首次推出耗盡型射頻電晶體時，氮化鎵電晶體已經出現。之後有很多新的公司加入引進射頻電晶體（如RFMD, Triquint, Cree, 飛思卡爾, Integra, HRL, M/A-COM及其它公司)，以及在電源轉換應用為替代功率MOSFET而設計的電晶體（如Transphorm, 國際整流器公司, GaN Systems, microGaN及宜普電源轉換公司）。本論文主要在討論這個熱鬧的科研現象是代表氮化鎵電晶體已經準備好替代功率MOSFET嗎？如果是，原因是什麼呢？

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作者：宜普公司產品應用副總裁Michael de Rooij博士
日期：在2012年6月27日刊載於Power Electronics Technology 雜誌

無線電源產品的應用日益普遍，尤其是應用於通用產品如手機充電器。作為MOSFET技術的替代產品，增強型氮化鎵電晶體具備更快開關速度的性能，是無線電源應用的理想器件。這篇文章我們主要討論實驗性的評估一個內含氮化鎵場效應電晶體在6.78 MHz時工作的無線充電系統的感應線圈，適合用於多個輸出功率為5W的U盤充電負載。

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作者：宜普公司產品應用副總裁Johan Strydom博士
日期：在2012年6月1日刊載於Bodo’s Power Systems雜誌

本論文主要在討論氮化鎵電晶體如宜普電源轉換公司的eGaN® FET可以提高隔離型八分之一磚式直流-直流轉換器的效率。這種電源轉換器普遍使用於大型電腦的主機、伺服器及通信系統，並具備不同的尺寸、輸出功率性能、輸入及輸出電壓範圍可供設計工程師考慮。它的模組性、功率密度、可靠性及多功能的特性有助隔離型電源產品的設計。

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作者：宜普公司產品應用副總裁Johan Strydom博士
日期：在2012年4月30日刊載於Power Electronics Technology 雜誌

在射頻功率放大器的波峰追蹤不是新技術。但隨著社會對電源產業日益增長的需求如增長手機的電池壽命、提高基站的能效及增加高成本的射頻傳輸器的輸出功率，通過波峰追蹤來提高射頻功率放大器系統的效率已經成為科研的一個重要議題。

我們在這篇文章展示了在大功率輸出的波峰追蹤應用中的降壓轉換器，如何使用eGaN FET實現功率及效率方面可達到的成效。

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這本由業界專家撰寫的“應用於高效電源轉換系統的氮化鎵電晶體”教科書,提供氮化鎵電晶體的科技理論和應用教材。

宜普電源轉換公司(www.epc-co.com)宣佈出版了旨在為電源系統設計工程師提供基本技術和應用資料,以怎樣利用基於氮化鎵的電晶體,設計出更高效的電源轉換系統。

The eGaN FET is a viable and efficient alternative to standard MOSFET solutions in Power over Ethernet (PoE) applications. These FETs enable higher operating frequencies that can be leveraged into reduced converter size and cost. Both 13W and 26W PoE eGaN FET converters were built and evaluated side by side with standard MOSFET designs. In every instance, eGaN FET converters exhibited higher efficiencies with the potential of reducing system cost over their MOSFET counterparts.

By Johan Strydom, Ph.D., Vice President of Applications, EPC
Michael de Rooij, Ph.D., Director of Applications, EPC
March 1, 2011

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eGaN FETs differ from silicon MOSFETs in part because of their significantly faster switching speeds. In the second article of this series, we explore the different requirements for gate drive, layout, and thermal management.

By Johan Strydom PHD, Director of Application Engineering, EPC
Power Electronics Technology
January 1, 2011

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As enhancement mode gallium-nitride-on-silicon transistors (eGaN™) gain wider acceptance as the successor to the venerable - but aged - power MOSFET, designers have been able to improve power conversion efficiency, size, and cost. eGaN FETs, however, are based on a relatively new and immature technology with limited design infrastructure to quickly design and implement products.

By Johan Strydom PhD, Director of Application Engineering EPC
Bodo’s Power Systems
November, 2010

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Efficient Power Conversion’s (EPC) enhancement-mode gallium-nitride (eGaN) power transistors, although similar to standard power MOSFETs, deliver performance unattainable by silicon-based devices.

Yanping Ma, PhD, Efficient Power Conversion, El Segundo, Calif.
How2Power
October, 2010

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The recent introduction of enhancement mode GaN transistors (eGaN™) as power MOSFET/ IGBT replacements in power management applications enables many new products that promise to add great system value. In general, an eGaN transistor behaves much like a power MOSFET with a quantum leap in performance, but to extract all of the newly-available eGaN transistor performance requires designers to understand the differences in drive requirements.

By Johan Strydom and Alex Lidow
September, 2010

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One yardstick to compare enhancement mode GaN (eGaN) power devices with state-of-the-art silicon MOSFETs is FOM. However, beyond these pure mathematical numbers, there are other device and package related parameters that significantly influence in-circuit performance.

By Johan Strydom PHD, Director of Application Engineering, EPC
Power Electronics Technology
September 1, 2010

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Thirty years of silicon power-MOSFET development has taught us that one of the key variables controlling the adoption rate of a disruptive technology is how easy the new technology is to use. This principle has guided the design of EPC’s enhancement-mode GaN (eGaN) transistors. This article explains why eGaN devices are easy to use, describing how they operate and their similarities and differences versus power MOSFETs.

By Johan Strydom
How2Power
June, 2010

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Due to its advantages GaN will probably become the dominant technology. GaN has a much higher critical electric field than silicon which enables this new class of devices to withstand much greater voltage from drain to source with much less penalty in on-resistance.

By Alex Lidow, PhD
Bodo’s Power Systems
June, 2010

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Recent breakthroughs by EPC in processing gallium nitride (GaN) have produced enhancement-mode devices with high conductivity and hyper-fast switching, with a silicon-like cost structure and fundamental operating mechanism.

By Robert Beach, Steve Colino
Electronic Design
April 29, 2010

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