EPC技术文章

Using GaN FETs with Controllers and Gate Drivers Designed for Silicon MOSFETs

Gallium Nitride (GaN) FETs have revolutionized the power electronics industry, offering advantages such as smaller size, faster switching, higher efficiency, and lower costs compared to traditional silicon MOSFETs. However, the rapid evolution of GaN technology has sometimes outpaced the development of dedicated GaN-specific gate drivers and controllers. Consequently, circuit designers often turn to generic gate drivers designed for silicon MOSFETs, necessitating careful consideration of various factors to ensure optimal performance.

Bodo’s Power Systems
February, 2024
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PODCAST: GaN for Motor Control and LiDAR Applications

In this episode of PowerUP featuring Alex Lidow, CEO of EPC, we delve into an examination of the revolutionary implications of GaN technology across a range of applications, with a specific focus on motor control and LiDAR systems.

Power Electronics News
February, 2024
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Advancements in GaN Motor Drive Inverters Revolutionize UAV Drones for Agricultural Applications

Modern agricultural techniques have been revolutionized by the integration of unmanned aerial- vehicle (UAV) drones, which are low-voltage battery-operated aircrafts. Smaller drones are utilized for terrain mapping and vegetation monitoring, while heavier, more robust variants are employed for tasks such as spraying and distributing fertilizers and insecticides as well as disseminating seeds and feed with payloads up to 50 kg loads. GaN-based inverters prove to be suitable for UAV agricultural drones since they extend the battery life by improving motor efficiency, courtesy of the higher PWM frequency with sinusoidal excitation. In addition to the efficiency considerations, the higher PWM frequency contributes to a reduction in the dimensions of the DC link, thereby reducing the size and weight of the inverter, which is vital in lightweight aircrafts.

Bodo’s Power Systems
December, 2023
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采用芯片级封装的氮化镓器件热建模

与采用传统硅器件的转换器相比,采用氮化镓基高电子迁移率晶体管 (HEMT) 具有许多材料和性能优势,已广泛用于消费和工业用功率转换领域。氮化镓器件在更高的开关频率下提高了功率转换效率,进而实现更低的系统成本和更高的功率密度。随着功率密度的增加,散热分析和热建模变得至关重要。我们将在本文分享EPC的热量计算器。 EPC公司制造增强型 GaN HEMT 和集成电路,例如支持多种转换器的半桥器件。

Power Electronics News
2023年11月
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GaN Technology from EPC Space Exhibits Extreme Robustness for Space Missions

Space exploration has always demanded cutting-edge technology, reliability, and resilience. The latest breakthrough in power electronics, gallium nitride (GaN) technology, has emerged as a game-changer for space-based systems offering superior radiation tolerance and unmatched electrical performance compared to traditional silicon MOSFETs. In this article, we delve into the reasons why GaN power devices are the ultimate choice for power conversion applications in space and how their resistance to radiation makes them an extremely robust solution for space missions.

Components in Electronics
October 2023
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Using GaN FETs to Burst Through 5 kW/in3 in a 48 V to 12 V LLC Converter

LLC resonant converters have emerged as the preferred topology for an intermediate 48 V to 12 V conversion due to their high efficiency, high power density and good dynamic response. The outstanding performance resulting from the combination of this topology with GaN transistors has been demonstrated in the past. This article presents how the newest generation of GaN devices, such as those from EPC, continues to push the envelope even further.

Bodo’s Power Systems
November, 2023
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GaN in Space: Unlocking Efficiency and Performance in Satellite Systems

The space industry is undergoing a transformative shift to “New Space,” driven by the increasing demand for ubiquitous connectivity and the emergence of innovative business models. One of the key elements of this transformation is the adoption of gallium nitride (GaN) technology in space applications. GaN holds immense potential due to its impressive radiation hardness, high system efficiency and lightweight characteristics.

In a discussion with EE Times Europe, Taha Ayari and Aymen Ghorbel, technology and market analysts at Yole Intelligence, part of Yole Group, explained how New Space—the low Earth orbit (LEO) mission segment, with a typical satellite lifespan of three to five years and lower reliability requirements—has become a focal point for GaN adoption. As a result, power GaN devices are being adopted for various satellite systems, including DC/DC converters, point-of-load systems, motor drives and ion thrusters.

EE Times Europe
October 2023
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氮化镓技术在功率转换领域普及进程的里程碑

影响氮化镓技术在各种电源管理应用中的快速渗透普及有哪些因素?在本文中,我们将深入探讨在过去 13 年中我司访问过、已投入批量生产的客户的反馈。

Power Electronics News
2023 年 10 月
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氮化镓晶体管简化大电流电机驱动逆变器的设计

由电池供电的工业车辆,例如叉车、手动搬运车或仓库内的自动汽车,需要大电流逆变器来驱动电机。 氮化镓技术有助于提高这些应用中的功效和简化逆变器的设计。

Bodo System
2023 年 10 月
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GaN产业版块动荡宜普如何越级挑战?

宜普电源转换公司首席执行官兼共同创办人Alex Lidow表示,GaN的成本竞争力亦与Si MOSFET并驾齐驱,潜在爆发力更有过之而无不及,目前最关键就是得重塑诸多研究者的老旧观念,认为GaN昂贵到碰不得。GaN的技术正迎来转捩点,在先进运算、车用电子、太空电子及消费电子等新型应用设计多数采GaN技术,而非Si MOSFET……

DIGITIMES Asia
2023年9月
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宜普发挥GaN成本优势目标超车Si MOSFET

宜普电源转换公司首席执行官兼共同创办人Alex Lidow接受DIGITIMES专访,提到GaN主要会被应用在650V及以下市场。反之碳化硅则是主导650V以上的市场,它可望取代硅基绝缘栅极双极性晶体管。宜普也在开发对速度及尺寸特性极为要求的400V以下市场。且致力于制造比Si功率元件拥有更高性能、更具成本竞争力的GaN元件。

DIGITIMES Asia
2023年9月
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EPC Space Brings GaN to the Edge of the Atmosphere

Bringing GaN to the final frontier, EPC Space introduced two new radiation-hardened GaN transistors for high-current switching in space-based applications. As the number of commercial satellites continues to increase, designers require more options for space-ready power electronics with improved current handling.

All About Circuits
September, 2023
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采用通过单片GaN集成电路提高性能,同时、缩小降低尺寸和降低成本

在功率转换、电机驱动和激光雷达等应用中,15 V至350 V范围内的氮化镓(GaN)异质结场效应功率晶体管显示出比硅具有显著优势的,无论是在效率、尺寸、速度和成本方面。这些优势源于关键电场的数量级比硅高出一个数量级,具体而言,尤其是高三倍的带隙方面有3倍的优势,和高1.3倍的电子迁移率方面有1.3倍的优势。

Bodo’s Power Systems
2023年9月
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GaN HEMT Package Improves Paralleling Of Devices In Space Power Applications

As more processing power and more complex loads are placed on-orbit or into deep space missions, it is sometime necessary to parallel two or more power switches. However, conventional power device packages, such as the FSMD-A/B/C/D and their I/O pad provisioning make it difficult to accomplish paralleling these devices in a performance-conscious manner. When paralleled, the gate and source-sense pads on these packages either serve to block the most efficient/shortest interconnect from package-to-package for the drain and source connections or for the gate and source-sense pads. So in parallel configurations, there is always a compromise between optimized drain-source load-circuit performance and gate-source-sense drive-loop performance. This article introduces the FSMD-G discrete HEMT package and explains how the reconfiguration of its I/O pads overcomes these limitations when paralleling GaN HEMTs.

How2Power
September, 2023
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EPC Aims High with 300V space-grade GaN power transistor

EPC Space has introduced radiation-hardened gallium nitride devices for space-borne power converters and other rugged environments.

Electronics Weekly
August, 2023
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GaN Technology Revolutionizing Space Missions: Enhancing Efficiency, Reliability, and Sustainability

GaN devices offer a plethora of benefits that align well with the demands of the space industry, addressing challenges related to reliability, radiation survivability, and space heritage.

Power Electronics News
August, 2023
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Predicting GaN Device Lifetimes In Solar Microinverters And Power Optimizers

Microinverters and power optimizers are widely utilized in modern solar panels to maximize energy efficiency and conversion. Such topologies and implementations usually require a minimum of 25 years of lifetime, which is becoming a critical challenge for market adoption. Low-voltage gallium nitride (GaN) power devices (VDS rating < 200 V) are a promising solution and are being used extensively by an increasing number of solar manufacturers.

In this article, a test-to-fail approach is adopted and applied to investigate the intrinsic underlying wear-out mechanisms of GaN transistors. The study enables the development of physics-based lifetime models that can accurately project the lifetimes under the unique demands of various mission profiles in solar applications.

How2Power
August, 2023
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A high efficiency, 3 kW capable, 2-phase, 3-level Converter using paralleled eGaN FETs

As the revolution of renewable energy as well as transportation electrification progresses, the need for residential energy storage systems is increasing. A high efficiency DC-to-DC converter is usually required to exchange energy generated from renewable sources, such as solar panels, with a battery. The fast-switching speed and low RDS(on) of gallium nitride (GaN) FETs can help save energy by reducing power consumption inside the DC-to-DC converter. This article shows how to design a high efficiency 100 – 250 V to 40 - 60 V DC-to-DC converter.

Power Electronics Europe
May, 2023
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汽车电子用于低压配电的演变—从 ICE 、MHEV 到目前的BEV汽车应用

汽车电子在过去30年内经历了几个时代的演变。 从主要采用机械或发动机驱动系统的纯内燃机 (ICE),到添加电力动力的轻度混合动力 (MHEV),再到全电池电动汽车 (BEV)应用。 在这三个时代中,用于转换和分配电力的架构甚至基本半导体元件都发生了重大的变化。 本文讨论了这个进化过程和对将来进化的方向做出了一些推测。

Power Systems Design
2023年8月
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GaN-based Power Management Solution for AMD Space-Grade Versal Adaptive SoC

In this article, Renesas Electronics explains how using a discreet GaN based power supply in the ISLVERSALDEMO2Z reference design for the core offers several advantages for power management in space avionics systems.

Power Electronics News
July, 2023
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