EPC90175: 25 V, 45 A Half-Bridge Development Board
Featuring EPC2371
The EPC90175 is a half-bridge development board with onboard gate drive featuring the 25 V rated EPC2371 eGaN® FET. The purpose of this
development board is to simplify the evaluation process of the EPC2371 by including all the critical
components on a single board that can be easily connected into most existing converter topologies.
The EPC90175 development board measures 2” x 2” and contains two EPC2371 GaN FETs in a half bridge
configuration. The EPC90175 features the Up1966E gate driver. The board contains all critical components,
and the layout supports optimal switching performance. There are also various probe points to facilitate
simple waveform measurement and efficiency calculation.