It’s okay to start using gallium-nitride (GaN) devices in your new designs. GaN transistors have become extremely popular in recent years. These wide-bandgap devices have been replacing LDMOS transistors in many power applications. For example, GaN devices are broadly being adopted for new RF power amplifiers used in cellular base stations, radar, satellites, and other high-frequency applications. In general, their ability to endure higher voltages and operate at frequencies well into the millimeter-wave (mmWave) range have them replacing traditional RF power transistors in most amplifier configurations.

Electronic Design
November, 2019
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This article discussed an oft forgotten or little-noticed part of the spacecraft enabling travel into outer space---power management in the space vehicle. Wide bandgap semiconductors like gallium nitride (GaN), silicon carbide (SiC), as well as diamond, are looking to be the most promising materials for future electronic components since the discovery of silicon. These technologies, depending upon their design, offer huge advantages in terms of power capability (DC and microwave), radiation insensitivity, high temperature and high frequency operation, optical properties and even low noise capability. Therefore, wide bandgap components are strategically important for the development of next generation space-borne systems. eGaN devices are quickly gaining momentum in the space industry and we will see many more applications for them by NASA and commercial contractors in future programs like Artemis and other programs in countries around the globe pursuing efforts into Space.

Power Systems Design
November, 2019
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Ahead of December’s Power Conference in Munich, Bodo Arlt took the opportunity to get an insight into Alex Lidow’s thoughts on where the GaN market is now and where he sees the potential applications for the future. Dr. Lidow is the CEO and Co-founder of Efficient Power Conversion (EPC).

Bodo’s Power Systems
November, 2019
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氮化镓（GaN）及碳化硅（SiC）器件的价格下调，对客户而言，更为吸引。多家供应商推出基于氮化镓及碳化硅的功率半导体，摩拳擦掌，正在爆发新一轮的半导体大战，全速进攻传统硅基器件的市场份额。

Semiconductor Engineering
2019年10月
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氮化镓技术为业界实现以前不可能达到的目标。EPC公司的Alex Lidow阐析医疗护理如何更好地利用氮化镓技术，实现重大的改进。

Electronic Specifier
2019年8月
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GaN transistors, with favorable figures of merit (FOM) for 48 V applications, can provide a reduction in size, weight, and bill of material costs. This article presents a five-phase, fully regulated, bidirectional 48 V to 12 V DC-DC converter. An advancedthermalmanagement solution suitable for use with eGaN FETs results in a system that can provide 3kW of power at an efficiency exceeding 97.5% into a 14.5 V battery.

Power Systems Design
July, 2019
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Small satellites bring a more cost-effective approach to low-Earth-orbit (LEO) missions, helping to deliver low-cost internet access across the globe. For this application, GaN FETs partnered with a radiation tolerant pulse width modulation controller and GaN fet driver allow more efficient switching, higher frequency operation, reduced gate drive voltage and smaller solution sizes compared to the traditional silicon counterparts.

Electronics Weekly
July, 2019
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根据预测，到2025年，我们的数据将会超过175 zettabyte。当发明了 5G并将最早于2020年在日本举行的奥运采用、以及通过人工智能（AI）及机器学习（ML）的发展，建立数据中心和其部署、以及提升目前较旧的数据中心的效能，将进入突飞猛进的时代。

我深信氮化镓（GaN）功率晶体管是数据中心功率架构的最理想元件，因为需要小型化、高效及快速开关的元件。氮化镓器件在具48 VIN的所有拓扑，都可以实现最高的效率。

EDN
2019年6月
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目前的氮化镓场效应晶体管在尺寸及性能方面以飞快的速度发展，而目前为业界树立基准的氮化镓器件的性能还可以提升多300倍。

最早采用氮化镓器件的应用是利用氮化镓的超快速开关速度，例如面向全自动驾驶汽车和无人机的激光雷达系统、机械人，以及4G/LTE基站。氮化镓器件的产量一直在增加，而其价格跟开关速度更慢、尺寸更大型和日益陈旧的MOSFET器件相约。因此，目前正是氮化镓器件正面攻击MOSET的时候！。

Bodo’s Power System
2019年6月
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eGaN FETs and ICs enable very high-density power converter design, owing to their compact size, ultra-fast switching, and low on-resistance. The limiting factor for output power in most high-density converters is junction temperature, which prompts the need for more effective thermal design. The chip-scale packaging of eGaN FETs and ICs offer six-sided cooling, with effective heat extraction from the bottom, top, and sides of the die. This article presents a high-performance thermal solution to extend the output current capability of eGaN-based converters.

EDN
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From the heart of Silicon Valley comes a new buzzword. Gallium nitride is the future of power technology. Tech blogs are touting gallium nitride as the silicon of the future, and you are savvy enough to get in on the ground floor. Knowing how important gallium nitride is makes you a smarter, better consumer. You are at the forefront of your peer group because you know of an up and coming technology, and this one goes by the name of gallium nitride.

HACKADAY
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EPC's chief executive, Alex Lidow, believes his GaN devices now beat silicon on performance and price, reports Rebecca Pool.

For EPC chief executive, Alex Lidow, this year's PCIM Europe 2019 has been all about applications. Presenting myriad enhanced-mode GaN FETs and ICs in end-products, the company is making a big play for 48 V DC-DC power conversion in advanced computing and automotives.

Compound Semiconductor
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This year’s PCIM Europe was attended by a record number of visitors, over 12,000. Over half (54%) were from outside Germany. They came to see over 500 exhibitors and while the subject matter was diverse and wide-ranging, there were some themes that emerged. GaN and SiC jostled for attention at this year’s PCIM Europe. Showing the potential that GaN has already realised, Efficient Power Conversion (EPC) had a stand that was well-stocked with examples of the eGaN FET technology that the company introduced in 2009.

Electronic Specifier
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宜普电源转换公司（EPC）推出两个全新100 V氮化镓器件，可以支持服务器及汽车应用的48 V转换的要求。 我将在处理器、车用及能量存储系统等方面探讨48 V服务器的功率转换解决方案（可参考我的文章 “双向DC/DC电源供电: 我们应该如何取向？”），未来将在EDN文章中看到。氮化镓功率晶体管必需是这些不同架构的一部分 -- 我相信没有其它更优越的元件可以替代氮化镓器件了 。

Planet Analog
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宜普电源转换公司的基于氮化镓的器件乃前沿技术。在本视频，宜普公司的首席执行官Alex Lidow于APEC展会现场与 Alix Paultre分享多个design in项目，从而展示基于氮化镓的器件的各种优势。

The Trilogy of Wireless Power Transfer consists of three parts: Basics Principles of Wireless Power Transmission, Wireless Power Transfer Systems and Applications. The first part of the book explains the basic physical principles and the different methods of contactless power transmission. Furthermore, the leading standards are presented in this part. The second part describes wireless power transfer systems, the different topologies of wireless power transmission, the right selection of transmitter and receiver coils required to increase efficiency, and the selection of transistors, for instance. The third part is dedicated to practical applications. This includes applications within the scope of the Qi standard, as well as examples of proprietary solutions. An overview of EMI-relevant topics for closely and loosely coupled systems, as well as an example of a multimode wireless power transmission system round out the practical part. The authors of the "Trilogy of Wireless Power Transfer" are Cem Som, Division Manager Wireless Power Transfer at Würth Elektronik eiSos; and Dr. Michael de Rooij, Vice President Applications Engineering at Efficient Power Conversion Corporation, Inc. The book costs 19 euros and can be ordered from Würth Elektronik eiSos or through bookstores.

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宜普电源转换公司首席执行官兼共同创办人Alex Lidow于APEC 2019展览会的Ridley Engineering展览摊位进行演讲，题目是“硅已经死亡”。

In this episode of PSDtv Alex Lidow, Chief Executive Officer and Co-Founder of Efficient Power Conversion (EPC) is at APEC 2019 in Anaheim and discusses why their GaN on Silicon devices make Silicon now dead.

PSDtv
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When the issue invariably turns to the packaging of the power semiconductor – transistor, diode, or integrated circuit – the requests for improvement fall into six categories:

1. Can you make the package smaller?
2. Can you reduce the package inductance?
3. Can you make the product with lower conduction losses?
4. Can you make the package more thermally efficient?
5. Can you sell the product at a lower price?
6. Can you make the package more reliable?

New converter topologies and power transistors promise to reduce the size and boost the efficiency of supplies that will run next-generation Artificial Intelligence (AI) platforms. In all the topologies with 48 V_IN, the highest efficiency comes with using GaN devices. This is due to their lower capacitance and smaller size. With recent pricing declines in GaN power transistors, the cost comparison with silicon-based converters now strongly favors GaN in all the leading-edge solutions.

Power Electronic Tips
March, 2019
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