最近まで、D級オーディオに利用できるトランジスタは、パワーMOSFETだけでした。MOSFETのスイッチング特性は、D級アンプの直線性を非常に劣化させます。さらに、全高調波歪みや雑音を低減するために、フィードバック・ループの利得を高くしなければなりません。このフィードバックによって古い音が存在し続けることになり、豊かさと微妙な音色が失われる原因になります。加えて、過大な電力消費は、MOSFETベースのD級アンプのスイッチング周波数を制限します。窒化ガリウムのD級アンプは、直線性が優れているので非常にきれいな波形であり、小さなフィードバックと豊かなサウンドを実現できます。窒化ガリウム・トランジスタは、MOSFETに比べて、はるかに消費電力が小さいのでスイッチング周波数を高くすることができ、より高い分解能、より小型化が実現でき、より安価なフィルタ部品を利用できます。 窒化ガリウム・ベースのD級オーディオ・アンプは、より小型なシステムで、より豊かなサウンドを提供します。

具备优越特性的eGaN^® FET与集成电路可以实现的低成本解决方案是在发射端采用单个功率放大器，而在接收端无论是采用什么标准，也可以实现无线充电。

关于在2016年PCIM展会与工程师分享最新的EPC9121演示套件的视频及相关的访问视频，请浏览http://www.we-online.cn/web/zh/electronic_components_cn/news_4/News_Detail_Standard_Parts_101822.php。

氮化镓集成电路：提高伺服器的功效 --不论是大、小规模的数据中心都要面对减低功耗、冷却及占用空间等问题，而这些问题也是在伺服器内所面临及需要解决的问题。有的时候，细微的改变也可带来重大的效益。

TechBeacon
2016年8月2日
阅读全文

基于氮化镓材料的场效应晶体管正在颠覆功率转换市场和替代硅基MOSFET。 与MOSFET相比，更快速的氮化镓场效应晶体管（GaN FET）可以在最细小的体积内实现更高的开关速度。 氮化镓器件的承诺是可以大大缩减电源供应器的体积及重量。为了实现最高的潜在性能， 这些具备高性能的氮化镓晶体管需要最优化的栅极驱动器。

Peregrine Semiconductor
2016年7月12日
阅读全文

在本系列的第一及第二章，我们详细讲解了关于EPC的增强型氮化镓场效应晶体管(eGaN^®FET)及集成电路(IC)的现场可靠性报告。具备优越的现场可靠性的eGaN器件展示出通过基于应力的认证测试可确保客户的应用也可以非常可靠。本章将阐释EPC器件在认证之前被置于及通过的各种应力测试。

Planet Analog
Chris Jakubiec
2016年7月9日
阅读全文

人们用硅材料命名了“硅谷”，而硅材料现正面对全新并具有潜力的竞争对手 – 氮化镓（GaN）材料。有说氮化镓器件可以取得300亿美元的半导体电源供应产业的市场份额。这个市场涵盖了所有利用墙上的电源插座取得电源的产品—从Apple（AAPL）的iPhone充电器，以至Tesla（TSLA）的豪华电动汽车。

Investor's Business Daily
Allison Gatlin
2016年7月
阅读全文

Tuesday I was fortunate enough to have a meeting with Alex Lidow, founder of chip company EPC of El Segundo, California, and something of an luminary of the chip world. Lidow came up with the “power MOSFET,” a device that went on to be the basis of billions in semiconductor sales, in 1977.

His new company, whose initials stand for “Efficient Power Conversion,” proposes replacing silicon, the original basis of the MOSFET, and one of the most prevalent types of semiconductor around, with a different material, Gallium Nitride, commonly abbreviated as GaN — or “eGaN,” as Lidow calls the company’s new, improved form of GaN.

Barron's
Tiernan Ray
June 29, 2016
Read article

There have been several comparisons of eGaN FETs with silicon MOSFETs in a variety of applications, including hard-switched, soft-switched, and high-frequency power conversion. These studies have shown that eGaN FETs have large efficiency and power density advantages over silicon MOSFETs. Here we’ll focus on the use of eGaN FETs in synchronous rectifier (SR) applications and the importance of dead-time management. We show that eGaN FETs can dramatically reduce loss due to dead-time in synchronous rectifiers above and beyond the benefits of low RDS(on)and charge.

Power Systems Design
By: Dr. John Glaser & Dr. David Reusch, Efficient Power Conversion
June 13, 2016
Read article

ANDOVER, Mass.—At the front door of Raytheon's Integrated Air Defense Center, there's a reminder of how big microwave electronics used to be—the original microwave oven. The now ever-present kitchen device was invented after a Raytheon engineer discovered his candy bar melted while he was standing near a magnetron used in a radar system the company was developing. Nearly the size of a refrigerator, the original microwave looks like it would cook a whole lot more than whatever was put within its metal grate, which was meant to contain the microwaves from its magnetron.

Ars Technica
June 9, 2016
Read article

The chip giant's execs are leaving the AirFuel Alliance as the company pivots away from PCs, but WiTricity was showing off Dell notebooks using its wireless charging mat at Computex.

ZDNet
Sean Portnoy
June 8, 2016
Read article

For the last three years, Intel has been stoking demand for PCs ahead of the next big buying cycle with the promise that new machines will be totally wireless. “We carry around a lot of wires,” Kirk Skaugen, Intel’s senior PC exec said at Computex Taipei 2015. “We carry about six cables each for our phones, our tablets and our PCs. We want to get rid of all those cables.”

Forbes
Elise Ackerman
June 6, 2016
Read article

With power converters demanding higher power density, transistors must be accommodated in an ever decreasing board space. Beyond gallium nitride based power transistors’ ability to improve electrical efficiency, they must also be more thermally efficient. This article evaluates the thermal performance of chip-scale packaged eGaN^® FETs and compares their in-circuit electrical and thermal performance with state-of-the-art silicon MOSFETs.

Bodo’s Power Systems
David Reusch, Ph.D. and Alex Lidow, Ph.D.
June 1, 2016
Read article

美国加州MILPITAS - 2016年5月 25日美通社专讯 --占领电源管理和精确模拟解决方案的市场领导地位的Intersil Corporation (纳斯达克指数NASDAQ代号: ISIL) 宣布计划进一步扩大其业界领先、面向卫星应用的耐辐射产品系列，在卫星及其它恶劣环境采用具备高可靠性的氮化镓（GaN）功率转换集成电路。

美通社
2016年5月25日
阅读全文

The number one barrier to improving every electronic product – from smart wearables and laptops to handheld tools and electric cars – is battery technology. The current state-of-the-art in rechargeable batteries, Lithium Ion, has been around for 25 years. As tech goes, that’s pretty old. It’s time for something new, don’t you think?

Fortune
Steve Tobak
May 13, 2016
Read article

宜普电源转换公司（EPC）的增强型氮化镓场效应晶体管（eGaN^® FET）及集成电路正在驱动最终用户应用的发展，包括LiDAR、无线充电、DC/DC电源转换、射频发射基站、卫星系统及音频放大器等应用。

从现场可靠性数据可以确证eGaN^® FET及集成电路于客户应用的品质。在本章节，我们分享eGaN FET的可靠性及现场数据的概述，包括在过去六年间我们对量产及已经付运的eGaN产品所收集的可靠性现场数据，以及分析超过170亿小时受测器件的现场数据。最后所得的FIT比率(109小时内发生失效的器件)大约是0.24，这是目前最好的现场可靠性测试结果。

Plant Analog
作者：Chris Jakubiec
2016年5月1 日
读过的文章

通信的数学基础始于信息论的创始人Claude Shannon于1948的著作《通信的数学理论》。他把信息通信简化为1及0数字，实质上是二进制数字。该理论可以于现实世界中有噪声的环境下，准确无误地传输数据。Shannon在2016年4月30日本来是他的百年诞辰。

EDN Network
Steve Taranovich
2016年4月16日
阅读文章

In this installment of WiGaN, a differential-mode class-E amplifier for 6.78 MHz loosely coupled resonant wireless power applications is presented. It uses the EPC2037 eGaN^® FET which has a small (0.9 mm x 0.9 mm) footprint and can be driven directly with a logic gate. The amplifier is AirFuel™ Class 2 compatible, capable of delivery up to 6.5 W load power over an impedance range of 70j Ω.

EEWeb - Wireless & RF Magazine
Yuanzhe Zhang, Ph.D., Director of Applications Engineering
Michael de Rooij, Ph.D., Vice President of Applications Engineering
April 12, 2016
Read article

In this short video, EPC's Alex Lidow explains why GaN FETs may make it possible to wirelessly charge a variety of vehicles, including flying drones. Wireless charging circuits employing GaN FETs work at 13.56 MHz, a switching frequency difficult to reach with ordinary silicon FETs. The GaN transistors used are also five to ten times smaller than silicon devices able to handle the same power levels.

Design World
April 11, 2016
View video

In this short video, EPC's Alex Lidow explains why GaN FETs can comprise circuits able to deliver Lidar resolutions down to a couple inches. Conventional silicon FETs performing the same tasks would be able to resolve images only down to a few feet. The secret is in the super-fast rise and fall times made possible by the GaN FETs.

Design World
April 11, 2016
View video

宜普电源转换公司的首席执行官Alex Lidow说硅材料是半导体的主要材料，它一直以来是电子行业背后的推动力。可是，它的性能已经到了极限。位于美国洛杉矶的宜普公司正在探究以具备更高的性能的氮化镓（GaN）器件颠覆市场并且取得硅基器件价值4000亿美元（2770亿英镑）的市场份额。Alex说：「这是业界首款比硅基器件的成本更低并且具备更高的性能的半导体。」

Wired Magazine
Emma Bryce
2016年3月31日
读过的文章