Recent breakthroughs by EPC in processing gallium nitride (GaN) have produced enhancement-mode devices with high conductivity and hyper-fast switching, with a silicon-like cost structure and fundamental operating mechanism.

By Robert Beach, Steve Colino
Electronic Design
April 29, 2010

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For the past three decades, Silicon-based power management efficiency and cost have shown steady improvement. In the last few years, however, the rate of improvement has slowed as the Silicon power MOSFET has asymptotically approached its theoretical bounds. Gallium Nitride grown on top of a silicon substrate could displace Silicon across a significant portion of the power management market.

By Alex Lidow, PhD
Power Electronics Europe
Issue 2, 2010

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