专为高效电源转换而设的氮化镓功率晶体管已经投产7年多了。全新的市场例如激光雷达、包络跟踪及无线电源，都成为氮化镓的新兴市场，因为氮化镓具备超高速的的开关速度。这些市场使得氮化镓产品得以量产、成本更低及具备优越的可靠性。这些优势为比较保守的设计工程师提供更大的利好条件，因此，DC/DC转换器工程师、AC/DC转换器及车载应用工程师都开始对氮化镓器件进行评估。要把120亿美元的硅基MOSFET市场转为氮化镓市场，还有什么壁垒呢？就是信心的问题。设计工程师、制造工程师、采购经理及管理层都必需对氮化镓技术的优势有足够的信心、相信氮化镓技术可以解决设计师对采用全新技术的风险的疑问。让我们看看3个主要构成风险的因素：供应链、成本及产品的可靠性。

IEEE Spectrum
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当全自动汽车及电力推进系统成为车载应用发展的推动力，在硅衬底上生成氮化镓的功率器件的庞大新兴市场正逐渐崛起。

Design World
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从2010年开始，自硅基氮化镓（GaN）晶体管商用化后，低压氮化镓晶体管推动了很多全新应用的发展。氮化镓器件具备超快速开关，推动全新市场诸如激光雷达、包络跟踪及无线电源市场的出现。这些全新应用进一步实现更强大的供应链、低制造成本及器件前所未有的高可靠性。这些优势使得比较保守的设计工程师在DC/DC转换器、AC/DC转换器及车载等各种应用开始对氮化镓器件进行评估。在本文章系列，我们将讨论多种发挥氮化镓器件优势的应用，实现最终产品差异化的竞争优势。首先，我们会探讨是什么因素加快了氮化镓器件的普及。

Power Systems Design
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In recent years, GaN-based power conversion has increased in popularity due to the inherent benefits of eGaN FETs over conventional Si transistors. Migrating a converter design from Si to GaN offers many system-level improvements, which require consideration of all the components in that system. This trend has subsequently spurred a growth in the ecosystem of power electronics that support GaN-based designs.

Power Systems Designs
By Edward A. Jones, Michael de Rooij, and David Reusch
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GaN power element technology has found its way into a major application in the industry with the release of the Dell Latitude computer using the AirFuel standard.

Planet Analog
July 19, 2017
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Max Smolaks欢迎于电源链（power chain）即将替代硅材料的全新氮化镓材料。

在过去的35年里，电源供电一直采用功率金属氧化物半导体场效应晶体管(MOSFET) –利用电压受控的硅器件进行开关及利用电场允许或阻止电流的流通。

Data Center Dynamics
2017年4月19日
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参看EPC公司于APEC 2017展示基于氮化镓技术的各种应用。

EDN Network
2017年4月3日
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于2017年APEC研讨会上，宜普电源转换公司（EPC）展示出采用氮化镓(eGaN)技术的各种应用以证明它即将改变我们的生活方式。

Electronics360
2017年3月29日
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人们用硅材料命名了“硅谷”，而硅材料现正面对全新并具有潜力的竞争对手 – 氮化镓（GaN）材料。有说氮化镓器件可以取得300亿美元的半导体电源供应产业的市场份额。这个市场涵盖了所有利用墙上的电源插座取得电源的产品—从Apple（AAPL）的iPhone充电器，以至Tesla（TSLA）的豪华电动汽车。

Investor's Business Daily
Allison Gatlin
2016年7月
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Tuesday I was fortunate enough to have a meeting with Alex Lidow, founder of chip company EPC of El Segundo, California, and something of an luminary of the chip world. Lidow came up with the “power MOSFET,” a device that went on to be the basis of billions in semiconductor sales, in 1977.

His new company, whose initials stand for “Efficient Power Conversion,” proposes replacing silicon, the original basis of the MOSFET, and one of the most prevalent types of semiconductor around, with a different material, Gallium Nitride, commonly abbreviated as GaN — or “eGaN,” as Lidow calls the company’s new, improved form of GaN.

Barron's
Tiernan Ray
June 29, 2016
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There have been several comparisons of eGaN FETs with silicon MOSFETs in a variety of applications, including hard-switched, soft-switched, and high-frequency power conversion. These studies have shown that eGaN FETs have large efficiency and power density advantages over silicon MOSFETs. Here we’ll focus on the use of eGaN FETs in synchronous rectifier (SR) applications and the importance of dead-time management. We show that eGaN FETs can dramatically reduce loss due to dead-time in synchronous rectifiers above and beyond the benefits of low RDS(on)and charge.

Power Systems Design
By: Dr. John Glaser & Dr. David Reusch, Efficient Power Conversion
June 13, 2016
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ANDOVER, Mass.—At the front door of Raytheon's Integrated Air Defense Center, there's a reminder of how big microwave electronics used to be—the original microwave oven. The now ever-present kitchen device was invented after a Raytheon engineer discovered his candy bar melted while he was standing near a magnetron used in a radar system the company was developing. Nearly the size of a refrigerator, the original microwave looks like it would cook a whole lot more than whatever was put within its metal grate, which was meant to contain the microwaves from its magnetron.

Ars Technica
June 9, 2016
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Power transistors with faster switching speeds will enable power supplies with smaller form factors and higher energy transfer efficiencies. Indeed, the elimination of heat sinks will give designers the ability to visualize entirely new form factors for power bricks and modules, including those enabling wireless power transfers. Gallium-nitride (GaN) transistors fabricated on silicon substrates can boost efficiencies and help shrink the footprint of power supplies.

Electronic Design
March, 2016
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由于PAPR比率在5G技术中会变差，氮化镓(eGaN)技术被认为是支持5G技术的基站结构在功效方面的最重要解决方案，而氮化镓功率晶体管已经实现了包络跟踪应用，我们并预期在未来的3至5年之间，当氮化镓技术继续发展，市场将会有更多的新兴应用陆续出现。

EDN
Steve Taranovich
2015年7月17日
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EPC garners the attention of MIT Technology Review with its new products targeted for wireless charging applications. Recognizing EPC as a catalyst for jump-starting the market for wireless power systems, the author highlights the need for universally accepted technology standards. He reinforces his position quoting Alex Lidow saying that “…convenience, cost, and efficiency” are all factors needed for broad adoption of any standard…

MIT Technology Review
July 15, 2015
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功率转换需要制造细小的器件以从电力的一种形式转换至另外的一种形式，从而使得所有电子设备运行顺畅。 直至目前为止，硅器件是功率转换的首选器件，但是当它的效率达到极限时，业界转而关注全新材料的发展。

Los Angeles Business Journal
2015年6月21日
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Last week, El Segundo, Calif.-based Efficient Power Conversion, announced that its offering two types of power transistors made from gallium nitride that it has priced cheaper than their silicon counterparts. “This is the first time that something has really been higher performance and lower cost than silicon,” CEO Alex Lidow says. “Gallium nitride has taken the torch and is now running with it.”

IEEE Spectrum
May 8, 2015
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半导体业界资深人士及宜普电源转换公司（EPC）首席执行官Alex Lidow说：「摩尔定律现正蜕变为预测全新的半导体材料的性能定律。EPC氮化镓（GaN）晶体管有机会替代硅器件。氮化镓材料是一种更好的电子导体，在性能及功效方面比硅更为优越。」氮化镓器件已经用于电源转换及无线通信等领域，它将有一天成为数字芯片。Lidow说：「60年以来首次出现采用优越材料的器件而不只是在更小尺寸方面发展。」

读过的文章
Network World
2015年4月17日

芯片的发展推动了一个又一个的技术大变革：个人电脑、互联网、智能手机、智能手表及即将推出的自动驾驶汽车。 宜普电源转换公司（EPC）是一间把它的将来押注在III-V氮化镓材料上的创始公司，其首席执行官Alex Lidow带领着一支34人的专业团队创建公司。该公司的业绩继续保持稳定增长，产品是采用III-V氮化镓（GaN）材料层的晶体管。 在2016或2017年，Lidow预计氮化镓器件的制造工艺可以包含计算机处理器内负责思考的逻辑电路。Lidow认为「与传统的硅器件相比，氮化镓器件所具备的电力特性使你立即可以取得1000倍改进产品性能的机会。」

读过的文章
CNET.com
2015年4月17日

Dean Takahashi at VentureBeat profiles Alex Lidow. Silicon chips have had a decades-long run as the foundation for modern electronics. But a new kind of chip, based on the compound material gallium nitride (GaN), promises to unseat silicon because it has higher performance, less power consumption, and lower cost.

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VentureBeat
April 2, 2015