EPC9006開發板可幫助設計工程師快速開發基於100V EPC2007的高頻開關型電源轉換系統。這是一種已製作好和易於連接的開發板，我們更備有完善歸檔的技術支援資料，可供用户使用。

宜普電源轉換公司(EPC)宣佈推出EPC9006開發板，這種開發板能使使用者更方便地使用宜普100V增強型氮化鎵(eGaN®)場效應電晶體設計產品。受益于eGaN FET性能的應用包括高速DC/DC電源、負載點轉換器、D類音頻放大器、硬開關和高頻電路。

EPC2007採用符合RoHS (有害物質限制) 條例要求的無鉛封裝，以增強其高頻開關性能。

宜普電源轉換公司(www.epc-co.com )宣佈推出第二代增強性能氮化鎵場效應電晶體(eGaN® FET)系列中的最新成員——EPC2007。EPC2007具有環保特性、無鉛、無鹵化物以及符合RoHS(有害物質限制)條例要求。

EPC9005開發板可幫助設計工程師快速開發基於40V EPC2014的高頻開關型電源轉換系統。這是一種已製作好和易於連接的開發板， 我們更備有它的技術支援資料，並已完善歸檔。

宜普電源轉換公司(EPC)宣佈推出EPC9005開發板，這種開發板能使使用者更方便地使用宜普40V增強型氮化鎵(eGaN®)場效應電晶體設計產品。受益于eGaN FET性能的應用包括高速DC/DC電源、負載點轉換器、D類音頻放大器、硬開關和高頻電路。

Wide-bandgap materials, such as GaN and SiC, are enabling a new generation of power switching devices that switch faster and with fewer losses than the venerable silicon MOSFET, resulting in smaller, more efficient power supplies.

By Margery Conner
EDN
August 25, 2011

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EPC推出第2代200V及100mΩ功率電晶體

http://www.eettaiwan.com/ART_8800649345_675763_NP_84b96cfa.HTM

2011年8月23日星期二

宜普電源轉換公司(EPC)推出第二代40V及16mΩ功率電晶體，進一步擴大其業界領先的增強型氮化鎵(eGaN®) 場效應電晶體產品系列範圍

EPC2014採用符合RoHS(有害物質限制)條例要求的無鉛封裝，以增強其高頻開關性能。

The EPC9004 has been recognized by Bodo’s Power Systems as the Product of the Month in the September, 2011 issue of the magazine. The EPC9004 facilitates rapid design of high frequency switching power conversion systems based on the 200 V EPC2012 with a ready-made, easy to connect development board.

Bodo's Power Systems
September, 2011

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EPC2012採用符合RoHS (有害物質限制) 條例的無鉛封裝，以增強其高頻開關性能。

宜普電源轉換公司(www.epc-co.com)宣佈推出第二代增強性能氮化鎵場效應電晶體(eGaN® FET)系列中的最新成員——EPC2012。EPC2012具有環保特性、無鉛、無鹵化物以及符合RoHS(有害物質限制)條例的要求。

EPC2012 FET是一款面積為1.6平方毫米的200VDS元件，RDS(ON)最大值是100mΩ，閘極電壓為5V。這種eGaN FET具有比第一代EPC1012 eGaN元件明顯更高的性能優勢。EPC2012的脈衝額定電流提高至15A(而EPC1012只有12A)，因此在較低閘極電壓時，其性能得以全面增強，而且由於提高了QGD/QGS比率，EPC2012還具有優異的dv/dt抗干擾性能。

EPC9004開發板可幫助設計工程師快速開發基於200V EPC2012的高頻開關型電源轉換系統。這是一種已製作好及易於連接的開發板，並備有完善歸檔的技術支援資料。

宜普電源轉換公司(EPC)宣佈推出EPC9004開發板，這種開發板能使客户更方便地使用宜普200V增強型氮化鎵(eGaN®)場效應電晶體設計產品，其應用範圍廣泛，如太陽能微型逆變器、D類音訊放大器、以太網供電(PoE)系統和同步整流器。

高度集成的半橋柵極驅動器提高了高壓應用的功率密度和效率

EEFocus

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We know Efficient Power Conversion (EPC) has commercialized enhancement-mode GaN-on-Si FETs, or eGaN FETs as EPC calls them, for more than a year now. Concurrently, it has been working with partners to realize dedicated drivers for its eGaN FETs, which offer lower RDS(ON) at higher voltages, lower gate charge, and no reverse recovery loss (QRR)—all these properties from a smaller die size than silicon. In essence, by comparison to silicon MOSFETs, the eGaN FETs offer a dramatic reduction in figures of merit or FOM.

By Ashok Bindra
How2Power
June, 2011

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氮化镓(GaN)场效应晶体管作为用于高压电源转换电路的开关器件正在不断蚕食硅基场效应晶体管市场。

By Margery Conner
EDN
June 20, 2011

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National Semiconductor Corp. (NYSE:NSM) today introduced the industry’s first 100V half-bridge gate driver optimized for use with enhancement-mode Gallium-Nitride (GaN) power field-effect transistors (FETs) in high-voltage power converters. Enhancement-mode GaN FETs enable new levels of efficiency and power density compared to standard metal-oxide semiconductor field-effect transistors (MOSFETs) due to their low on-resistance (Rdson) and gate charge (Qg) as well as their ultra-small footprint, but driving them reliably presents significant new challenges. National’s LM5113 driver integrated circuit (IC) eliminates these challenges, enabling power designers to realize the benefits of GaN FETs in a variety of popular power topologies.

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宜普電源轉換公司(www.epc-co.com)宣佈其矽基增強型氮化鎵(eGaN®)功率FET系列器件獲得聲望很高的《電子工程專輯》頒發年度電子創新(ACE)獎項的能源技術大獎。ACE獎項旨在表彰在全球產業中展現領先和創新精神並使我們生活更加美好的技術創造者。

“我們非常榮幸能夠獲得ACE獎項。這個獎項證明宜普的增強型GaN功率電晶體為電源轉換技術領域帶來重大突破。我們相信矽基MOSFET的表現已經走到了盡頭，eGaN技術將引領電源管理解决方案的表現持續改進。” 宜普公司合夥創始人、首席執行長Alex Lidow表示。

Microsemi is working with Efficient Power Conversion (EPC) www.epc-co.com in the development of a complete line of high performance FETS for high reliability space and military applications. A jointly researched paper entitled "Enhancement Mode Gallium Nitride Characteristics Under Long Term Stress" will be presented at the Government Microcircuit Applications and Critical Technology Conference (GOMAC), March 21-24, 2011 in Orlando, Florida. The study covers the reliability testing results and demonstrates the stability of the devices at temperature and under radiation exposure.

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Alex Lidow is interviewed by ECN's Editorial Director, Alix Paultre, on the Tinker's Toolbox, ECN's audio interview website.  The interview explores the attributes of GaN technology, applications opened as a result of GaN's superior performance to MOSFETs and reasons for the take-up of eGaN FET products over the past year.

Listen to Interview

EL SEGUNDO, Calif. - March 15, 2011 - Efficient Power Conversion Corporation (www.epc-co.com) announce the introduction of the EPC2001 and EPC2015, two lead-free, RoHS-compliant (Restriction of Hazardous Substances) enhancement-mode gallium nitride on silicon (eGaN™) FETs.

The EPC2001 FET is a 100 V_DS device with a maximum R_DS(ON) of 7 milliohms with 5 V applied to the gate, and the EPC2015 is a 40 V_DS with a maximum R_DS(ON) of 4 milliohms. Both eGaN FETs provide significant performance advantages over similar state-of-the-art silicon-based power MOSFETs. Both devices have low on resistance, are smaller than silicon devices with similar resistance and have many times superior switching performance.

The eGaN FET is a viable and efficient alternative to standard MOSFET solutions in Power over Ethernet (PoE) applications. These FETs enable higher operating frequencies that can be leveraged into reduced converter size and cost. Both 13W and 26W PoE eGaN FET converters were built and evaluated side by side with standard MOSFET designs. In every instance, eGaN FET converters exhibited higher efficiencies with the potential of reducing system cost over their MOSFET counterparts.

By Johan Strydom, Ph.D., Vice President of Applications, EPC
Michael de Rooij, Ph.D., Director of Applications, EPC
March 1, 2011

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Efficient Power Conversion Corporation (EPC) Market Leading eGaN™ FET Named Finalist in Prestigious 2010 EDN Innovation Awards Competition

EL SEGUNDO, Calif-February 23, 2011 - Efficient Power Conversion Corporation’s EPC1010 enhancement-mode gallium nitride on silicon (eGaN™) power FET has been named a finalist in EDN’s 21st annual Innovation Awards http://innovation.edn.com/) within the Power IC’s category.

我们对功率半导体最基本的要求是性能、可靠性、管控性及成本效益。它的高频率性能，可切合稳压器系统于体积及瞬态响应方面的需要而具更高价值，并为D类功率放大器提供高保真度。一个新器件结构如果不高效、不可靠的话，根本不可能商品化。市场上有很多新结构及原料可选择，但是接受度有限。不过，现在有氮化镓(Gallium Nitride/GaN)增强型功率管控器件问世，具有高导电性、极快开关、硅器件之成本结构及基本操作模式等优异性能，其代表就是宜普公司的新产品。

Stephen Colino, Robert Beach
今日电子
2010年9月

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