作者：宜普公司產品應用副總裁Michael de Rooij博士
日期：在2012年6月27日刊載於Power Electronics Technology 雜誌

無線電源產品的應用日益普遍，尤其是應用於通用產品如手機充電器。作為MOSFET技術的替代產品，增強型氮化鎵電晶體具備更快開關速度的性能，是無線電源應用的理想器件。這篇文章我們主要討論實驗性的評估一個內含氮化鎵場效應電晶體在6.78 MHz時工作的無線充電系統的感應線圈，適合用於多個輸出功率為5W的U盤充電負載。

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作者：宜普公司產品應用副總裁Johan Strydom博士
日期：在2012年6月1日刊載於Bodo’s Power Systems雜誌

本論文主要在討論氮化鎵電晶體如宜普電源轉換公司的eGaN® FET可以提高隔離型八分之一磚式直流-直流轉換器的效率。這種電源轉換器普遍使用於大型電腦的主機、伺服器及通信系統，並具備不同的尺寸、輸出功率性能、輸入及輸出電壓範圍可供設計工程師考慮。它的模組性、功率密度、可靠性及多功能的特性有助隔離型電源產品的設計。

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作者：宜普公司產品應用副總裁Johan Strydom博士
日期：在2012年4月30日刊載於Power Electronics Technology 雜誌

在射頻功率放大器的波峰追蹤不是新技術。但隨著社會對電源產業日益增長的需求如增長手機的電池壽命、提高基站的能效及增加高成本的射頻傳輸器的輸出功率，通過波峰追蹤來提高射頻功率放大器系統的效率已經成為科研的一個重要議題。

我們在這篇文章展示了在大功率輸出的波峰追蹤應用中的降壓轉換器，如何使用eGaN FET實現功率及效率方面可達到的成效。

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研討會： 在2012年2月9日舉行的電力電子應用技術研討會（APEC）

演講者： Alex Lidow博士

內容： Lidow博士是電源轉換公司首席執行長，為這家公司的共同創辦人及現有 HEXFET功率MOSFET技術的共同發明者之一。Lidow博士將在這個研討會和 工程師討論增强型氮化鎵場效應電晶體(eGaN FET)如何在尺寸和器件表現方 面比矽功率MOSFET卓越很多。

EPC2007採用符合RoHS (有害物質限制) 條例要求的無鉛封裝，以增強其高頻開關性能。

宜普電源轉換公司(www.epc-co.com )宣佈推出第二代增強性能氮化鎵場效應電晶體(eGaN® FET)系列中的最新成員——EPC2007。EPC2007具有環保特性、無鉛、無鹵化物以及符合RoHS(有害物質限制)條例要求。

2011年8月23日星期二

宜普電源轉換公司(EPC)推出第二代40V及16mΩ功率電晶體，進一步擴大其業界領先的增強型氮化鎵(eGaN®) 場效應電晶體產品系列範圍

EPC2014採用符合RoHS(有害物質限制)條例要求的無鉛封裝，以增強其高頻開關性能。

EPC2012採用符合RoHS (有害物質限制) 條例的無鉛封裝，以增強其高頻開關性能。

宜普電源轉換公司(www.epc-co.com)宣佈推出第二代增強性能氮化鎵場效應電晶體(eGaN® FET)系列中的最新成員——EPC2012。EPC2012具有環保特性、無鉛、無鹵化物以及符合RoHS(有害物質限制)條例的要求。

EPC2012 FET是一款面積為1.6平方毫米的200VDS元件，RDS(ON)最大值是100mΩ，閘極電壓為5V。這種eGaN FET具有比第一代EPC1012 eGaN元件明顯更高的性能優勢。EPC2012的脈衝額定電流提高至15A(而EPC1012只有12A)，因此在較低閘極電壓時，其性能得以全面增強，而且由於提高了QGD/QGS比率，EPC2012還具有優異的dv/dt抗干擾性能。

高度集成的半橋柵極驅動器提高了高壓應用的功率密度和效率

EEFocus

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Alex Lidow is interviewed by ECN's Editorial Director, Alix Paultre, on the Tinker's Toolbox, ECN's audio interview website.  The interview explores the attributes of GaN technology, applications opened as a result of GaN's superior performance to MOSFETs and reasons for the take-up of eGaN FET products over the past year.

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The eGaN FET is a viable and efficient alternative to standard MOSFET solutions in Power over Ethernet (PoE) applications. These FETs enable higher operating frequencies that can be leveraged into reduced converter size and cost. Both 13W and 26W PoE eGaN FET converters were built and evaluated side by side with standard MOSFET designs. In every instance, eGaN FET converters exhibited higher efficiencies with the potential of reducing system cost over their MOSFET counterparts.

By Johan Strydom, Ph.D., Vice President of Applications, EPC
Michael de Rooij, Ph.D., Director of Applications, EPC
March 1, 2011

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eGaN FETs differ from silicon MOSFETs in part because of their significantly faster switching speeds. In the second article of this series, we explore the different requirements for gate drive, layout, and thermal management.

By Johan Strydom PHD, Director of Application Engineering, EPC
Power Electronics Technology
January 1, 2011

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自2004年GaN HEMT(高电迁移 率晶体管)问世以来，基于GaN材料 的新技术不断涌现，但由于成本偏 高和耗尽型 作的不方便，GaN晶体 管市场接受度一直受限，不过这一 局面有望得到改观。美国宜普公司 最近推出首款增强型硅基GaN功率晶 体管(简称eGaN FET)，可专门用于 替代MOSFET，而且使用标准硅制 造技术和设备，可以低成本大批量 生产。

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EPC, the first company to deliver enhancement mode GaN (eGaN™) FETs to the market, has been recognized by EDN for inclusion on their list of "100 Hot Products for 2010."

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As enhancement mode gallium-nitride-on-silicon transistors (eGaN™) gain wider acceptance as the successor to the venerable - but aged - power MOSFET, designers have been able to improve power conversion efficiency, size, and cost. eGaN FETs, however, are based on a relatively new and immature technology with limited design infrastructure to quickly design and implement products.

By Johan Strydom PhD, Director of Application Engineering EPC
Bodo’s Power Systems
November, 2010

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Efficient Power Conversion’s (EPC) enhancement-mode gallium-nitride (eGaN) power transistors, although similar to standard power MOSFETs, deliver performance unattainable by silicon-based devices.

Yanping Ma, PhD, Efficient Power Conversion, El Segundo, Calif.
How2Power
October, 2010

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The recent introduction of enhancement mode GaN transistors (eGaN™) as power MOSFET/ IGBT replacements in power management applications enables many new products that promise to add great system value. In general, an eGaN transistor behaves much like a power MOSFET with a quantum leap in performance, but to extract all of the newly-available eGaN transistor performance requires designers to understand the differences in drive requirements.

By Johan Strydom and Alex Lidow
September, 2010

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One yardstick to compare enhancement mode GaN (eGaN) power devices with state-of-the-art silicon MOSFETs is FOM. However, beyond these pure mathematical numbers, there are other device and package related parameters that significantly influence in-circuit performance.

By Johan Strydom PHD, Director of Application Engineering, EPC
Power Electronics Technology
September 1, 2010

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Thirty years of silicon power-MOSFET development has taught us that one of the key variables controlling the adoption rate of a disruptive technology is how easy the new technology is to use. This principle has guided the design of EPC’s enhancement-mode GaN (eGaN) transistors. This article explains why eGaN devices are easy to use, describing how they operate and their similarities and differences versus power MOSFETs.

By Johan Strydom
How2Power
June, 2010

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Due to its advantages GaN will probably become the dominant technology. GaN has a much higher critical electric field than silicon which enables this new class of devices to withstand much greater voltage from drain to source with much less penalty in on-resistance.

By Alex Lidow, PhD
Bodo’s Power Systems
June, 2010

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Recent breakthroughs by EPC in processing gallium nitride (GaN) have produced enhancement-mode devices with high conductivity and hyper-fast switching, with a silicon-like cost structure and fundamental operating mechanism.

By Robert Beach, Steve Colino
Electronic Design
April 29, 2010

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