EPC技术文章

数据中心的发展于2019年将进入突飞猛进的时代

根据预测,到2025年,我们的数据将会超过175 zettabyte。当发明了 5G并将最早于2020年在日本举行的奥运采用、以及通过人工智能(AI)及机器学习(ML)的发展,建立数据中心和其部署、以及提升目前较旧的数据中心的效能,将进入突飞猛进的时代。

我深信氮化镓(GaN)功率晶体管是数据中心功率架构的最理想元件,因为需要小型化、高效及快速开关的元件。氮化镓器件在具48 VIN的所有拓扑,都可以实现最高的效率。

EDN
2019年6月
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氮化镓正面攻击硅功率MOSFET器件

目前的氮化镓场效应晶体管在尺寸及性能方面以飞快的速度发展,而目前为业界树立基准的氮化镓器件的性能还可以提升多300倍。

最早采用氮化镓器件的应用是利用氮化镓的超快速开关速度,例如面向全自动驾驶汽车和无人机的激光雷达系统、机械人,以及4G/LTE基站。氮化镓器件的产量一直在增加,而其价格跟开关速度更慢、尺寸更大型和日益陈旧的MOSFET器件相约。因此,目前正是氮化镓器件正面攻击MOSET的时候!。

Bodo’s Power System
2019年6月
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Thermal design for a high density GaN-based power stage

eGaN FETs and ICs enable very high-density power converter design, owing to their compact size, ultra-fast switching, and low on-resistance. The limiting factor for output power in most high-density converters is junction temperature, which prompts the need for more effective thermal design. The chip-scale packaging of eGaN FETs and ICs offer six-sided cooling, with effective heat extraction from the bottom, top, and sides of the die. This article presents a high-performance thermal solution to extend the output current capability of eGaN-based converters.

EDN
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The Amazing New World of Gallium Nitride

From the heart of Silicon Valley comes a new buzzword. Gallium nitride is the future of power technology. Tech blogs are touting gallium nitride as the silicon of the future, and you are savvy enough to get in on the ground floor. Knowing how important gallium nitride is makes you a smarter, better consumer. You are at the forefront of your peer group because you know of an up and coming technology, and this one goes by the name of gallium nitride.

HACKADAY
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EPC: Ahead of the Pack

EPC's chief executive, Alex Lidow, believes his GaN devices now beat silicon on performance and price, reports Rebecca Pool.

For EPC chief executive, Alex Lidow, this year's PCIM Europe 2019 has been all about applications. Presenting myriad enhanced-mode GaN FETs and ICs in end-products, the company is making a big play for 48 V DC-DC power conversion in advanced computing and automotives.

Compound Semiconductor
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PCIM Europe – where power is at the core of innovation

This year’s PCIM Europe was attended by a record number of visitors, over 12,000. Over half (54%) were from outside Germany. They came to see over 500 exhibitors and while the subject matter was diverse and wide-ranging, there were some themes that emerged. GaN and SiC jostled for attention at this year’s PCIM Europe. Showing the potential that GaN has already realised, Efficient Power Conversion (EPC) had a stand that was well-stocked with examples of the eGaN FET technology that the company introduced in 2009.

Electronic Specifier
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氮化镓技术可以提升面向服务器及汽车应用的48 V DC/DC 功率转换的效率

宜普电源转换公司(EPC)推出两个全新100 V氮化镓器件,可以支持服务器及汽车应用的48 V转换的要求。 我将在处理器、车用及能量存储系统等方面探讨48 V服务器的功率转换解决方案(可参考我的文章 “双向DC/DC电源供电: 我们应该如何取向?”),未来将在EDN文章中看到。氮化镓功率晶体管必需是这些不同架构的一部分 -- 我相信没有其它更优越的元件可以替代氮化镓器件了 。

Planet Analog
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APEC 2019视频

宜普电源转换公司的基于氮化镓的器件乃前沿技术。在本视频,宜普公司的首席执行官Alex Lidow于APEC展会现场与 Alix Paultre分享多个design in项目,从而展示基于氮化镓的器件的各种优势。

EPC partners with Würth Elektronik eiSos to present Trilogy of Wireless Power Transfer

The Trilogy of Wireless Power Transfer consists of three parts: Basics Principles of Wireless Power Transmission, Wireless Power Transfer Systems and Applications. The first part of the book explains the basic physical principles and the different methods of contactless power transmission. Furthermore, the leading standards are presented in this part. The second part describes wireless power transfer systems, the different topologies of wireless power transmission, the right selection of transmitter and receiver coils required to increase efficiency, and the selection of transistors, for instance. The third part is dedicated to practical applications. This includes applications within the scope of the Qi standard, as well as examples of proprietary solutions. An overview of EMI-relevant topics for closely and loosely coupled systems, as well as an example of a multimode wireless power transmission system round out the practical part. The authors of the "Trilogy of Wireless Power Transfer" are Cem Som, Division Manager Wireless Power Transfer at Würth Elektronik eiSos; and Dr. Michael de Rooij, Vice President Applications Engineering at Efficient Power Conversion Corporation, Inc. The book costs 19 euros and can be ordered from Würth Elektronik eiSos or through bookstores.

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硅已经死亡

宜普电源转换公司首席执行官兼共同创办人Alex Lidow于APEC 2019展览会的Ridley Engineering展览摊位进行演讲,题目是“硅已经死亡”。

PSDtv - EPC on Why Silicon is Dead at APEC 2019

In this episode of PSDtv Alex Lidow, Chief Executive Officer and Co-Founder of Efficient Power Conversion (EPC) is at APEC 2019 in Anaheim and discusses why their GaN on Silicon devices make Silicon now dead.

PSDtv
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It's Time to Rethink Power Semiconductor Packaging

When the issue invariably turns to the packaging of the power semiconductor – transistor, diode, or integrated circuit – the requests for improvement fall into six categories:

1. Can you make the package smaller?
2. Can you reduce the package inductance?
3. Can you make the product with lower conduction losses?
4. Can you make the package more thermally efficient?
5. Can you sell the product at a lower price?
6. Can you make the package more reliable?

Powering graphics processors from a 48-V bus

New converter topologies and power transistors promise to reduce the size and boost the efficiency of supplies that will run next-generation Artificial Intelligence (AI) platforms. In all the topologies with 48 VIN, the highest efficiency comes with using GaN devices. This is due to their lower capacitance and smaller size. With recent pricing declines in GaN power transistors, the cost comparison with silicon-based converters now strongly favors GaN in all the leading-edge solutions.

Power Electronic Tips
March, 2019
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The Power and Evolution of GaN, Part 6: GaN Technology Adoption and Roadmap

In the final installment of this series, how GaN has met the requirements to displace silicon is explored. As the adoption rate of GaN explodes, it is important to remember that, while GaN has made many advancements in just a few short years, it is still far from its theoretical performance limitations and thus there are profound improvements that can continue to be achieved. In time, the performance and cost advantages of GaN-on-silicon will result in a majority of applications currently using silicon-based devices converting to the smaller, faster, cheaper, and more reliable GaN technology.

Power Systems Design
February, 2019
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GaN 的功率和演变- 第5部分:采用eGaN FET和集成电路构建低成本、高效的12 V - 1 V 负载点转换器

氮化镓器件对提升主流应用的效率的贡献很大,例如在传统硅基12 V - 1 V负载点 DC/DC转换器。基于eGaN集成电路的12 V转到1 V、12 A负载转换器在5 MHz的频率下,可以实现78%峰值效率及1000 W/in3 功率密度,而成本则低于每瓦0.2美元。

Power Systems Design
2019年1月
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为什么采用氮化镓器件?

氮化镓技术已经成熟至可以挑战传统的硅技术。从2010年起,商用的低压硅基氮化镓功率器件实现了很多全新应用。具备高速开关性能的氮化镓器件也推动了全新市场的出现,例如激光雷达、包络跟踪及无线电源市场。这些全新应用有助供应链的开发、实现低制造成本及良好的器件可靠性记录。这一切对于比较保守的DC/DC转换器、AC/DC转换器及车载应用的设计工程师来说,是很好的理据,是时候开始对氮化镓器件进行评了。本文探讨加快采纳氮化镓器件的各项因素。

Electronics Weekly
2019年1月
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氮化镓的强大推动力及演进 - 第四章:eGaN FET和集成电路为手术用的机械人带来精准的控制

本章讨论由于低压硅基氮化镓(GaN)器件具备超快速的开关速度,因此实现了很多全新应用的出现。这些应用推动了行业的改革,例如面向全自动驾驶汽车的激光雷达(lidar)、面向5G通信应用的包络跟踪,以及家用和用于办公室的大面积无线电源技术。此外,我们会探讨氮化镓功率器件如何为手术用的机械人带来精准的控制,从而推动了医疗行业的最新发展。

Power Systems Design
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The Power and Evolution of GaN, Part 3: How to Build an Ultra-Fast High-Power Laser Driver using eGaN FETs - That Sees Farther, Better, and at a Lower Cost!

In the first article in this series, how gallium nitride (GaN)-on-silicon low voltage power devices have enabled many new applications, such as light detection and ranging (LiDAR), envelope tracking, and wireless power was discussed. In this article, more detail on one of these leading applications, LiDAR, will be explored. How GaN is being used to make LiDAR systems that see farther, with higher resolution, and at lower cost will be shown.

Power Systems Design
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Gallium nitride is the silicon of the future

Last week, Anker debuted a tiny new power brick, crediting its small size with the component it uses instead of silicon: gallium nitride (GaN). It’s the latest example of the growing popularity of this transparent, glass-like material that could one day unseat silicon and cut energy use worldwide.

The Verge
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Building the Smallest and Most Efficient 48 V to 5 - 12 V DC to DC using eGaN FETs and ICs

The Power and Evolution of GaN – Part 2 of 6 part series

With the power architecture transition from a 12 V to a 48 V bus power distribution in modern data centers, there is an increased demand to improve 48 V power conversion efficiency and power density. In this context, DC-DC converters designed using eGaN® FETs and ICs provide a high efficiency and high power density solution. Additionally, with the advent of 48 V power systems in mild-hybrid, hybrid and plug-in hybrid electric vehicles, GaN transistors can provide a reduction in size, weight, and Bill of Materials (BOM) cost.

Power Systems Design
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