宜普電源轉換公司（EPC） 與世界先進積體電路股份有限公司（VIS） 攜手合作生產八吋氮化鎵晶圓，透過VIS高品質的製造能力，進一步强化EPC在氮化鎵功率轉換市場的領導地位。

發佈單位：宜普電源轉換公司、世界先進公司

發佈日期：111年12月6日

Continue the conversation with Guy Moxey and EPC CEO and Co-Founder Alex Lidow as they explore how GaN and Wolfspeed Silicon Carbide are changing the way we live, and where the future of these technologies could take us.

Wolfspeed
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This paper deals with the application of the latest generation low voltage (up to 80 V) Gallium Nitride (GaN) devices for motor drive applications in the field of electric micro-mobility. A two-level inverter topology oriented to light electric traction (such as electric scooters) with a power rate of 1500 W has been considered. An experimental board using two GaN FETs in parallel connection for each switch of an inverter leg has been arranged. The intrinsic parameters spread of the device, as well as the leakage inductances of both the circuit and the PCB, to evaluate the impact on the current share during both the transient phase and in the steady state have been investigated. In the paper, several simulation runs have been carried out and described. Furthermore, the inverter experimental board has been used to evaluate the phase voltages and currents at different load conditions. Finally, the temperature limits versus phase current variation have been evaluated.

IEEE 2022 AEIT International Annual Conference (AEIT)
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Note: This site requires IEEE membership to access full paper.

In this interview from electronica 2022, Alex Lidow talks about technology during these 50 years of EE Times, the next challenges for our industry, and the growth of GaN. “Below 650 volts, where the MOSFET is dominant that will be written over by GaN”.

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GaN power devices should be the ideal choice for power conversion applications in space because they are more robust than rad hard MOSFETs when exposed to various forms of radiation. The electrical and thermal performance of GaN has also demonstrated superior operation in a space environment. In this podcast, Bel Lazar, Chief Executive Officer of EPC Space, will analyze the importance of GaN for the space industry. In addition to his role as CEO of EPC Space, Bel currently serves as COO of Efficient Power Conversion (EPC).

EETimes
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In this article EPC explains the improved performance in their Gen 6 GaN FETs and how the resulting devices can achieve the same R_DS(on) as previous generation devices in die that are half the size.

How2Power
November, 2022
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Efficient Power Conversion (EPC) introduces the 80 V, 4 mOhm EPC2619 GaN FET in tiny 1.5 mm x 2.5 mm footprint, offering higher performance and smaller solution size than traditional MOSFETs for high power density applications, including DC-DC conversion, motor drives, and synchronous rectification for 12 V – 20 V.

EL SEGUNDO, Calif.— November 2022 — EPC, the world’s leader in enhancement-mode gallium nitride (GaN) power FETs and ICs, launches the 80 V, 4 mOhm EPC2619. This is the lead product for a new generation of eGaN devices that have double the power density compared to EPC’s prior-generation products.

As energy efficiency standards increase, high-voltage Silicon Carbide and low-voltage GaN are replacing traditional silicon, enabling cooler, lighter, and more powerful electronics. Join Guy Moxey and Alex Lidow, EPC CEO and Co-founder, and explore how Wolfspeed and EPC technologies complement one another in the race towards a more sustainable future.

Wolfspeed
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GaN FETs help Solarnative achieve industry-leading power density for solar microinverters, enabling module frame integration to solve the challenges of solar power installation.

EL SEGUNDO, Calif.— November 2022 Solarnative uses GaN devices in its new microinverter to achieve industry-best power density.  The Power Stick is the smallest inverter in the world, with dimensions of 23.9 by 23,2 by 404 millimeters. With an AC output power of 350 W, the volume of 0.19 liters corresponds to a power density of 1.6 kW per liter. By comparison, the IQ 7A microinverter from a market leading supplier delivers 349 watts with a volume of 1.12 liters, corresponding to 0.31 kW per liter – not even one-fifth of the Solarnative device. Despite the extreme size reduction, the European efficiencies are quite comparable, at 96.0 percent for the Power Stick and 96.5 percent for the IQ 7A.

With increasing legislation aimed at higher fuel efficiency standards, vehicle manufacturers are searching for cost-effective solutions to meet these demands while still providing the power required for ever-increasing electronically driven functions.  This article details a bi-directional high power converter for mild-hybrid cars and battery backup units using GaN FETs to achieve efficiency exceeding 96% when converting from 48 V to 14.3 V at 500 kHz switching frequency.

Power Electronics Europe
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From Nov. 15 to 18, electronica 2022 will bring the international electronics industry together at the Munich exhibition grounds. Wide Bandgap Semiconductors, Renewable Energies, Smart Grid, and Energy Storage will be the major topics covered by the Power Electronics Forum at electronica 2022. In this podcast, onsemi president and CEO Hassane El-Khoury, Silanna Semiconductor North America CEO Mark Drucker, and of Efficient Power Conversion (EPC) CEO Alex Lidow will introduce the Power Electronics Forum. Interview with Alex Lidow starts at 31:55

EETimes
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GaN devices have gone from initial R&D to mainstream designs over the last 15 years. Unfortunately, there are many misunderstandings left-over from those early-stage bipolar drive circuit developments or dead-end technology branches. One of the most pernicious is the topic of bipolar drive. In actuality, unipolar drives are the best way to drive eGaN^® FETs.

Power Electronics Tips
October, 2022
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宜普電源轉換公司 (EPC) 推出150 V、6 mΩ EPC2308 GaN FET，讓高功率密度應用實現更高的性能和更小的解決方案，包括 DC/DC轉換、AC/DC SMPS和充電器、太陽能優化器和微型逆變器，以及馬達控制器。

EPC是增强型氮化鎵 (eGaN®)功率FET和IC領域的全球領導者，新推採用更耐熱的QFN封裝且可立即發貨的150 V EPC2308氮化鎵元件，用於電動工具和機器人的馬達控制器、用於工業應用的80 V/100 V高功率密度 DC/DC轉換器、用於充電器、適配器和電源供電的28V~54V同步整流器、智能手機USB快速充電器，以及太陽能優化器和微型逆變器。

Gallium nitride devices are leading the innovation in power conversion. The benefits of GaN-based inverters are becoming increasingly evident in motor drive applications.

Power Electronics News
October, 2022
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As the level of automation increases in machines, detailed awareness of the surroundings becomes necessary. Time-of-flight based 3D imaging systems have become the eyes of machines. eGaN^® technology has been the workhorse of laser drivers for these systems, enabling the resolution to make intelligent decisions.

Bodo’s Power Systems
October, 2022
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EPC9176是一款基於氮化鎵元件的逆變器參考設計，增强了馬達控制系統的性能、續航能力、精度和扭矩，同時簡化設計。該逆變器尺寸極小，可集成到電機外殼中，從而實現最低的EMI、最高的功率密度和最輕盈。

宜普電源轉換公司（EPC）宣佈推出EPC9176。這是一款三相BLDC馬達控制逆變器，採用EPC23102 ePower™ 功率級GaN IC，內含閘極驅動器功能和兩個具有5.2 mΩ典型導通電阻的GaN FET。EPC9176在20 V和80 V之間的輸入電源電壓下工作，可提供高達28 A_pk(20 A_RMS)的電流。這種電壓範圍和功率使該解決方案非常適合用於各種36V~80 V輸入的三相BLDC馬達控制應用，包括電動自行車、電動滑板車、電動工具、無人機、機器人、直流伺服、醫療機器人和工廠自動化。

In this article, different power loop layouts are analyzed with simultaneous considerations for thermal management and electric parasitics.

The results show that an improved layout can provide a significant reduction in operating temperature rise while maintaining electrical performance benefits.

EE Power
October, 2022
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The development of gallium nitride technology has ushered in a new age for power electronics. The greater bandgap, critical field, and electron mobility are the three factors that affect GaN technology the most. To concentrate on expanding motor drive applications based on GaN technology in the e-mobility, robotics, drone, and industrial automation areas, EPC has opened a new design application center close to Turin, Italy.

EE Times Europe
September, 2022
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Alex Lidow, former CEO of International Rectifier and CEO of Efficient Power Conversion, is one of the few individuals to have pioneered two revolutionary power semiconductor technologies – the silicon power MOSFET and the gallium nitride HEMT. How did he come to have these two unique opportunities?

elektroniknet.de
September, 2022
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There is a commonly held belief in the industry that GaN devices are wasted on inverters for electric motors. After all, if the performance of the system is restricted by the use of a 20KHz PWM, then there can be little benefit in using a material that gains the majority of its advantages from faster switching speeds. However, according to Marco Palma, Director of Motor Drives Systems and Applications at EPC, there are some ways that GaN can still prove effective in that role.

Power Systems Design
September, 2022
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