氮化镓（GaN）场效应晶体管随时准备在电压调节器及直流-直流电源应用替代硅功率器件。 与硅MOSFET器件相比，氮化镓晶体管的开关速度快很多及具有更低的导通电阻（R_DS(on)），从而可以实现具有更高功效的功率电源，对我们来说是好的。如果你正在使用氮化镓器件设计功率电路，你必需理解器件的开关速度。

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In this installment of the ‘How to GaN’ series we will discuss a new family of eGaN FETs that is keeping Moore’s Law alive with significant gains in key switching figures of merit that widen the performance gap with the power MOFET in high frequency power conversion.

EEWeb
By: Alex Lidow
October, 2014

根据美国市场研究公司The Information Network指出，碳化硅及氮化镓功率半导体市场于2011年至2017年的复合年均增长率将达63%及营收预测为5亿美元。

Compound Semiconductor
2014年10月
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本章展示在10 MHz频率开关、采用氮化镓场效应晶体管的硬开关降压转换器的结果及提供转换器功耗的细数。此外，我们将展示采用氮化镓场效应晶体管的转换器目前所取得无可匹敌的高频性能及如果要推动器件工作在更高频率时所面对的限制。

EEWeb
作者：Alex Lidow
2014年8月

Long talked about, wide bandgap gallium nitride-on-silicon (GaN-on-Si) transistors are now commercially available. They are being touted for replacing silicon-based MOSFETs, which are turning out to be inefficient for many high-performance power supply designs. Recently, several suppliers of GaN-on-Si-based HEMTs and FETs have emerged in the marketplace, among them Efficient Power Conversion (EPC). To expedite the evaluation of eGAN FETs for power supply designs transitioning from silicon MOSFETs to eGaN FETs, EPC has released several development boards in the last few years.

By Ashok Bindra
Digi-Key Article Library
July 15, 2014
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高压氮化镓器件即将商用化，制造商终于可预期它的市场发展速度将非常迅猛

杂志：Compound Semiconductor
2014年7月
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本章将讨论我们设计的氮化镓场效应晶体管（eGaN^®FET）模块使得电源转换系统设计师很容易可对具超卓性能的氮化镓晶体管进行评估

EEWeb
作者：Alex Lidow
2014年6月

氮化镓器件于2020年的销售额预期可达差不多6亿美元并大约需要制造58万片6英寸晶圆。氮化镓器件的市场将于2016年起发展迅猛，至2020年的複合年均增长率达80%，这个预期是基于EV/HEV预计从2018至2019年开始采纳氮化镓得出。于2015年至2018年，电源供电/功率因数校正将成为主要市场并将最后占氮化镓器件销售总额 50%，届时氮化镓器件于车用市场将急起直追。

Yole Development公司
2014年6月
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业界迅速采纳基于氮化镓的功率器件，因为氮化镓器件的工作频率及开关速度是硅功率器件所不能实现的。

Power Electronics Europe
作者：Alex Lidow博士、Johan Strydom博士及 David Reusch博士
2014年6月

According to the latest report from Yole Développement, the GaN power industry is set for significant growth in the future.

Compound Semiconductor
June 12, 2014
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High frequency enhancement mode transistors, such as the EPC8000 series eGaN^® FETs from EPC, have been widely available since September 2013 and enable simplified designs at RF frequencies. In this installment, we present the RF characteristics of the EPC8000 series devices and show their implementation in a pulsed class A amplifier. The amplifier is pulsed to allow operation within the thermal operating limits of the device, since RF device power dissipation is typically on the same order of magnitude as the RF power delivered, unlike switching devices, such as the EPC8000 series, that operate well above 95 % efficiency. The EPC8000 series FETs, designed originally for switching power conversion applications, otherwise exhibit excellent RF characteristics and in conclusion will be compared with similar specified LDMOS.

EEWeb
By: Alex Lidow
May 29, 2014

硅半导体技术的供应链已经投放超过千亿美元，使得它难以置信地极具效率。制造新兴的高性能氮化镓晶体管如何在这方面可与硅器件匹敌？答案很简单，我们利用硅器件的供应链来制造氮化镓器件，因此可大大降低氮化镓晶体管的制造成本。

Power Systems Design
作者：Alex Lidow
2014年 5月 27日

应用于功率转换领域的硅器件的性能已接近其理论极限。氮化镓（GaN）及碳化硅（SiC）将取代大部分市值120亿美元的硅功率MOSFET市场。目前已经有产品投产，其性能比硅器件的理论性能极限好5至10倍。

杂志：Bodo’s Power Systems
作者：Alex Lidow
2014年5月

在过去几年间，无线电源传送应用逐渐流行，尤其是替便携式装置充电的应用。宜普公司在本章讨论使用松散耦合线圈、高度谐振的无线电源解决方案，符合A4WP标准并适合工作在免执照、給工業、科學及醫療用电器设备（ISM）使用的6.78 MHz或13.56 MHz頻率。

杂志：Bodo’s Power Systems
作者：Alex Lidow博士及Michael De Rooij博士
2014年5月

This column evaluated the ability to parallel eGaN^® FETs for higher output current applications by addressing the challenges facing paralleling high speed, low parasitic devices, and demonstrated an improved paralleling technique. For experimental verification of this design method, four parallel half bridges in an optimized layout were operated as a 48 V to 12 V, 480 W, 300 kHz, 40 A buck converter, and achieved efficiencies above 96.5%, from 35% to 100% load. The design method achieved superior electrical and thermal performance compared to conventional paralleling methods and demonstrated that high speed GaN devices can be effectively paralleled for higher current operation.

EEWeb
By: Alex Lidow
April, 2014

在德州Fort Worth举行的APEC 2014年度IEEE功率电力电子研讨会已经完满结束。 该研讨会的多个议题让与会者留下深刻印象，其中一个是经历了饶具趣味的进程的氮化镓（GaN）功率晶体管。详情请访问 http://electronicdesign.com/blog/pmbus-gan-and-more-dominate-apec-2014。

Electronic Design杂志
2014年3月

EPC公司Michael de Rooij与Power Systems Design 杂志编辑Alix Paultre分享无线电源传送解决方案。

Power Systems Design杂志
2014年3月
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由于德国航空太空中心的机械人及机械电子研究院（Robotics and Mechatronics Institute ）对改善传感器及功率电子的兴趣很大，我们利用开发全新机械人的机会来评估宜普电源转换公司（EPC）的全新增强型氮化镓场效应晶体管技术并与我们目前最优秀的逆变器设计进行比较。

杂志 ：Bodo’s Power Systems
作者：德国航空太空中心 (DLR) Robin Gruber
日期：2014年3月

The quality of sound reproduced by an audio amplifier, measured by critical performance parameters such as THD (Total Harmonic Distortion), damping factor (DF), and T-IMD (Inter-modulation Distortion), is influenced by the characteristics of the switching transistors used. Class-D audio amplifiers typically use power MOSFETs, however, lower conduction losses, faster switching speed, and zero reverse recovery losses provided by enhancement-mode GaN (eGaN) FETs enable a significant increase in the sonic quality, and higher efficiency that can eliminate heatsinks. The result is a system with better sound quality in a smaller form factor that can be built at a lower cost.

EEWeb
By: Alex Lidow
February, 2014

Enhancement-mode gallium nitride transistors have been commercially available for over four years and have infiltrated many applications previously monopolized by the aging silicon power MOSFET. There are many benefits derived from the latest generation eGaN® FETs in new emerging applications such as highly resonant wireless power transfer, RF envelope tracking, and class-D audio. This article will examine the rapidly evolving trend of conversion from power MOSFETs to gallium nitride transistors in these new applications.

Power Pulse
By: Alex Lidow
February, 2014