隨著採用氮化鎵（GaN）元件的應用越來越多，Bodo Arlt 借此機會與 EPC公司的首席執行長兼共同創辦人 Alex Lidow 談及他認爲這種不斷發展的技術的下一個重點市場。

Bodo’s Power Systems
2021 年 9 月
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由 Bodo Power Systems 主辦的氮化鎵行業專家圓桌會議的嘉賓包括：

1. EPC公司的首席執行長兼共同創始人Alex Lidow
2. Power Integrations公司的市場行銷與應用工程副總裁Doug Bailey
3. Nexperia 公司的氮化鎵功率技術行銷戰略總監Dilder Chowdhury
4. Navitas Semiconductor公司的市場行銷戰略高級總監Tom Ribarich

In this article, the author introduces a GaN FET compatible analog controller that yields a low bill-of-material count and give designers the ability to design a synchronous buck converter in the same simple way as using silicon FETs, and offers superior performance for 48 V power systems.

Power Electronics News
April, 2021
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氮化鎵電晶體和積體電路通過消除輸入濾波器中的電解電容，以提高馬達控制應用的功率密度。氮化鎵元件的卓越開關性能可消除死區時間且實現無與倫比的正弦電壓和電流波形，從而實現更平滑且沒有雜訊的操作。

Bodo’s Power Systems
2021年4月
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In last month’s Safety & Compliance column in How2Power, “WBG Semiconductors Pose Safety And EMI Challenges In Motor Drive Applications,”[1]Kevin Parmenter made some assertions about the difficulties of using SiC, and to a lesser extent GaN, power semiconductors in large motor-drive applications. This commentary is a response to that article, showing that GaN can be a game changer in low-voltage integrated motors.

How2Power
February, 2021
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Efficient Power Conversion (EPC) publishes Phase-12 Reliability Report adding to the extensive knowledge found in their first eleven reports. With this report, EPC demonstrates field experience of 226 billion eGaN ^® device hours and a robustness capability unmatched by silicon power devices.

EL SEGUNDO, Calif.— January 2021 — EPC announces its Phase-12 Reliability Report, documenting the strategy used to achieve a remarkable field reliability record. eGaN devices have been in volume production for more than eleven years and have demonstrated very high reliability in over 226 billion hours of operation, most of which are in vehicles, LTE base stations, and satellites, to name just a few applications with rigorous operating conditions.

Gallium nitride (GaN) transistors have been in mass production for over 10 years. In their first few years of availability, the fast switching speed of the new devices – up to 10 times faster than the venerable Si MOSFET – was the main reason for designers to use GaN FETs. As the pricing of GaN devices normalized with the MOSFET, coupled with the expansion of a broad range of devices with different voltage ratings and power handling capabilities, much wider acceptance was realized in mainstream applications such as DC-DC converters for computers, motor drives for robots, and e-mobility bikes and scooters. The experience gained from the early adopters has led the way for later entrants into the GaN world get into production faster. This article is the first in a series of articles discussing three topics that can help power systems designers achieve the most out of their GaN-based designs at the lowest cost. The three topics are: (1) layout considerations; (2) thermal design for maximum power handling; and, (3) EMI reduction techniques for lowest cost.

Bodo’s Power Systems
January, 2021
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新一代100 V 氮化鎵場效應電晶體（eGaN^® FET）是48 V_OUT同步整流、D類音訊放大器、汽車資訊娛樂及雷射雷達系統的理想功率元件。

增強型矽基氮化鎵（eGaN）功率場效應電晶體和積體電路的全球領導廠商宜普電源轉換公司（EPC）最新推出的兩款100 V eGaN FET（EPC2218及EPC2204），性能更高並且成本更低，可立即供貨。採用這些先進氮化鎵元件的應用非常廣闊，包括同步整流器、D類音訊放大器、汽車資訊娛樂系統、DC/DC轉換器（硬開關和諧振式）和面向全自動駕駛車輛、機械人及無人機的雷射雷達系統。

矽功率MOSFET未能跟上電力電子行業的發展變化，而效率、功率密度和更小的外型尺寸等因素是行業的主要需求。 矽MOSFET元件的性能已達到其理論極限，並且由於電路板的空間非常寶貴，因此功率系統設計人員必需找出替代方案。 氮化鎵（GaN）元件是一種高電子遷移率電晶體（HEMT），這種半導體正為新興應用不斷增值。

EETimes
2020年8月
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就像生活要面對現實一樣，老年人離開舞臺而讓位給年輕人，矽元件也是需要向現實低頭。 隨著氮化鎵元件的問世和普及，正逐步淘汰舊有可靠的矽元件。 在過去的四十年中，隨著功率MOSFET元件的結構、技術和電路拓撲的創新與不斷增長的電力需求同步發展，電源管理的效率和成本一直以來得以穩步改善。 但是，在業界發展的新時代，隨著矽功率MOSFET元件接近其理論極限，其演進速度下降了很多。 同時，新材料氮化鎵的理論性能極限穩步發展，其性能極限比老化的MOSFET元件高出6,000倍，並且比目前市場上最好的氮化鎵產品高出300倍。

EEWeb
2020年7 月16日
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在EEWorld “虛擬圓桌會議” 關於D類音訊的討論的第二部份中，我們的小組成員深入探討了新興氮化鎵元件（GaN）對D類設計的影響：矽元件在哪方面仍然佔主導地位？ 在D類放大器中使用GaN的性能優勢是什麼？ D類放大器中GaN與矽的未來預期趨勢如何？

參加這個虛擬圓桌會議包括Analog Devices公司音訊系統架構師Joshua LeMaire（JL）、 宜普電源轉換公司（EPC）戰略技術銷售副總裁Steve Colino（SC）和 英飛淩（Infineon ）D類音訊應用工程主管Jens Tybo Jensen（JTJ）。

EEWorld Online
2020年7月
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Efficient Power Conversion (EPC) will showcase the company’s latest ePower™ Stage IC family of products showing how GaN technology’s superior performance is transforming power delivery for computing, communications, robotics, and transportation at the PCIM Europe 2020 Digital Days.

EL SEGUNDO, Calif.— June 2020 — The EPC team will be delivering three technical presentations and participating in two panel discussions on gallium nitride (GaN) technology and applications at the upcoming PCIM Europe 2020 Digital Days, July 7 – 8. In addition, the company will participate in the event’s virtual exhibit, showing its latest eGaN FETs and ICs in customers’ end products that are rapidly adopting eGaN technology.

中壓氮化鎵場效應電晶體（eGaN FET）的成本在三年前已經比等效額定功率MOSFET器件的成本更低。當時，EPC公司決心利用氮化鎵場效應電晶體的性能及成本效益優勢，積極研發及支持48 V輸入或輸出的應用。車用及電腦應用的48 V 轉換逐漸成為全新的架構，也成為了功率系統的全新標準。

Power Systems Design
2020年3月31日
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矽功率MOSFE追不上目前功率電子業界的演進步伐 -- 業界需要具備高效、高功率密度及細小的外型尺寸的元件。業界看到矽MOSFET已經達到它的理論極限，從而需要找出全新元件。氮化鎵（GaN）是一種HEMT元件，具備附加增值的優勢，被證明為可以支持全新應用的要求。

Power Electronics News
2020年3月25日
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It’s getting harder to avoid using GaN power transistors and ICs, says Alex Lidow. There are many reasons to use GaN-on-Si power transistors such as eGaN FETs, in telecoms, vehicles, healthcare and computing. Smaller, faster, lower cost, and more integrated, GaN-on-Si devices have spent a decade gaining the confidence and trust of designers across the spectrum of power conversion applications.

Electronic Specifier
November 20, 2019
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Efficient Power Conversion (EPC) provides gallium nitride-based power devices for Solace Power’s 250 W wireless power platforms to enable higher power solutions and faster design cycle times.

EL SEGUNDO, Calif.— September 2019 — EPC announces collaboration with Solace Power, a leading wireless power, sense and data company, to enable 250-watt wireless power solutions designed for 5G, aerospace, automotive, medical, and industrial applications. Solace Power’s intelligent wireless platform use EPC’s 200 V enhancement-mode gallium nitride (eGaN^®) power transistors. This modular platform shares the same Equus™ architecture and enables up to 250 Watts of transmitted power with superior six degrees of spatial freedom.

GaN transistors, with favorable figures of merit (FOM) for 48 V applications, can provide a reduction in size, weight, and bill of material costs. This article presents a five-phase, fully regulated, bidirectional 48 V to 12 V DC-DC converter. An advancedthermalmanagement solution suitable for use with eGaN FETs results in a system that can provide 3kW of power at an efficiency exceeding 97.5% into a 14.5 V battery.

Power Systems Design
July, 2019
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EPC introduces 100 V, 3.8 milliohm EPC2053 eGaN^® FET, joining the EPC2045, EPC2052, and EPC2051 to offer a comprehensive 100 V family of GaN transistors that are more efficient, smaller, and lower cost for high performance 48 V DC-DC conversion.

EL SEGUNDO, Calif. — April 2019 — Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2053 (3.8 mΩ, 100 V) eGaN FET.

專為功率系統設計師而設的EPC2052功率電晶體是一種100 V、13.5 mΩ並採用超小型晶片級封裝的電晶體，可實現74 A脈衝輸出電流。面向48 V-12 V DC/DC功率轉換器，這些新一代氮化鎵場效應電晶體工作在500 kHz頻率下，可實現超過97%的效率。如果工作在1 MHz時，則實現超過96%的效率。

宜普電源轉換公司（EPC）宣佈推出100 V的EPC2052氮化鎵場效應電晶體，其占板面積只是2.25平方毫米、最大導通阻抗(R_DS(on))為13.5 mΩ及脈衝輸出電流高達74 A 以支援高效功率轉換。

When the issue invariably turns to the packaging of the power semiconductor – transistor, diode, or integrated circuit – the requests for improvement fall into six categories:

1. Can you make the package smaller?
2. Can you reduce the package inductance?
3. Can you make the product with lower conduction losses?
4. Can you make the package more thermally efficient?
5. Can you sell the product at a lower price?
6. Can you make the package more reliable?