随着处理能力的增强和更复杂的负载被放置在轨道上或深空任务中，有时需要并联两个或多个电源开关。然而，传统的电源设备封装，如FSMD-A/B/C/D及其I/O垫片设置，使得在性能敏感的情况下实现这些设备的并联变得困难。当并联时，这些封装上的栅极和源感垫片要么阻挡了从封装到封装的漏极和源极连接的最有效/最短互连，要么阻挡了栅极和源感垫片的连接。因此，在并联配置中，总是在优化漏极-源极负载电路性能和栅极-源感驱动环路性能之间做出妥协。本文介绍了FSMD-G离散HEMT封装，并解释了其I/O垫片的重新配置如何在并联GaN HEMT时克服这些限制。

How2Power
2023年9月
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EPC Space 推出了用于太空电源转换器和其他恶劣环境的抗辐射氮化镓设备。

电子周刊
2023年8月
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氮化镓（GaN）器件提供了众多优势，非常适合空间工业的需求，解决了与可靠性、辐射生存能力和空间遗产相关的挑战。

电力电子新闻
2023年8月
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微型逆变器和功率优化器在现代太阳能电池板中被广泛使用，以最大限度地提高能源效率和转换。这些拓扑结构和实施通常需要至少25年的使用寿命，这已成为市场采用的一个关键挑战。低电压氮化镓 (GaN) 功率器件（VDS 额定值 < 200 V）是一个有前景的解决方案，越来越多的太阳能制造商正在广泛使用它们。

在本文中，采用了一种测试到失败的方法，并将其应用于研究 GaN 晶体管的内在磨损机制。该研究使得基于物理的寿命模型得以开发，这些模型可以准确地预测在太阳能应用的各种任务配置下的寿命。

How2Power
2023年8月
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As the revolution of renewable energy as well as transportation electrification progresses, the need for residential energy storage systems is increasing. A high efficiency DC-to-DC converter is usually required to exchange energy generated from renewable sources, such as solar panels, with a battery. The fast-switching speed and low R_DS(on) of gallium nitride (GaN) FETs can help save energy by reducing power consumption inside the DC-to-DC converter. This article shows how to design a high efficiency 100 – 250 V to 40 - 60 V DC-to-DC converter.

Power Electronics Europe
May, 2023
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汽车电子在过去30年内经历了几个时代的演变。 从主要采用机械或发动机驱动系统的纯内燃机 (ICE)，到添加电力动力的轻度混合动力 (MHEV)，再到全电池电动汽车 (BEV)应用。 在这三个时代中，用于转换和分配电力的架构甚至基本半导体元件都发生了重大的变化。 本文讨论了这个进化过程和对将来进化的方向做出了一些推测。

Power Systems Design
2023年8月
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在本文中，瑞萨电子解释了在ISLVERSALDEMO2Z参考设计中使用基于GaN的离散电源为核心的电源管理在空间航空电子系统中带来的若干优势。

电力电子新闻
2023年7月
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低压 GaN FET 可实现更小、冷却要求最小化和效率更高的解决方案

与采用传统的硅基功率 MOSFET的应用相比，低压 GaN FET（即 100 V）可实现更小，冷却要求最小化和效率更高的解决方案。 本文讨论了氮化镓器件如何应对动态性能需要重复且可靠的表征的挑战。 定制氮化镓夹具和测试板的机械和电气设计仔细、周全，就可以克服其中许多挑战，使您能够在设计功率转换器时，自信地使用这些新型宽能隙器件。

Power Electronics News
2023年7月
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瞬态电压过冲是氮化镓高电子迁移率晶体管（HEMTs）在高斜率开关条件下的常见现象。在这种压力下的动态参数不稳定性是氮化镓应用的关键问题。这项工作首次准确表征了在重复电压过冲高达数十亿次开关周期下氮化镓HEMTs动态导通电阻（R_DS(on)）的演变。发现动态R_DS(on)的增加是过压开关下主要的器件退化原因。这些发现是通过高频、重复、未钳位电感开关（UIS）测试，结合主动温度控制和准确的原位R_DS(on)监测获得的。提出了一个基于物理的模型，将动态R_DS(on)漂移与峰值过压相关联，并与实验数据达成了良好的一致性。该模型进一步用于预测氮化镓HEMTs的寿命。对于在100 kHz和120 V尖峰下切换的100 V额定氮化镓HEMTs，模型预测在连续运行25年内动态R_DS(on)漂移不到10%。这项工作解决了氮化镓HEMTs过压开关可靠性的主要问题，并提供了电子俘获机制的新见解。

IEEE Xplore
张瑞哲，Ricardo Garcia，Robert Strittmatter，张宇浩，张盛科
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事实证明，15 V ~ 350 V 氮化镓异质结场效应功率晶体管在功率转换、电机驱动和激光雷达等应用中，无论是在效率、尺寸、速度和成本方面都比硅器件更具优势 。氮化镓集成电路为许多高频应用提供了多方面的系统级优势。 氮化镓集成电路才刚刚发展，其优势肯定会随着其技术发展而不断增强。

Bodo’s Power Systems
2023年6月
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宜普电源转换公司(EPC)是增强型氮化镓 (GaN) FET 和 IC产品的领导者，在纽伦堡举行的 PCIM Europe 2023展会上分享了关于氮化镓技术的发展和其应用的演示。 我们与该公司的联合创始人兼首席执行官 Alex Lidow 就电力电子行业和氮化镓技术对行业的影响进行了深度交流。

Electronic Design
2023年5月
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在本期《Spirit: 幕后揭秘》节目中，Spirit Electronics 的 CEO Marti McCurdy 与 EPC 的 CEO Alex Lidow 和市场总监 Renee Yawger 聊天，讨论了氮化镓（GaN）的进展。他们讨论了 GaN 在高辐射下的性能，以及 EPC 的第 15 阶段可靠性报告中详细介绍的大量测试、失效模式和器件寿命。随着 GaN 的全部潜力尚待发掘，并且 EPC 新产品频繁发布，包括新的半桥驱动器、低侧驱动器和完整的功率阶段，GaN 在新空间和商业空间应用中尤为有用。

Spirit: 幕后揭秘
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Monolithic GaN integration has matured to the point that complex circuits such as a half bridge gate driver with various features can now be realized. This article will cover DC-to-DC and BLDC motor drive application examples that benefit from monolithic half-bridge integration.

Power Electronics News
May, 2023
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Modern solar panels are demanding increasingly higher power density and longer operating lifetimes. Solar applications including power optimizers and panels with built-in microinverters are becoming the prevailing trend for an increasing number of solar customers, where low voltage GaN power devices (V_DS < 200 V) are extensively used.

Bodo’s Power Systems
May, 2023
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Gallium nitride (GaN) transistors and ICs have the best attributes to satisfy BLDC inverter needs. The superior switching capability of GaN helps to remove dead time and increase PWM frequency to obtain unmatched sinusoidal voltage and current waveforms for smoother, silent operation with higher system efficiency

Power Systems Design
May, 2023
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This article discusses the advantages of GaN-based power stages and introduces a sample device from EPC, implemented in a half-bridge topology. It explains how to use associated development kits to quickly get started on a project. In the process, designers will learn how to measure the parameters of a BLDC motor and operate it in sensorless field orientation control (FOC) with minimal programming effort using Microchip Technology’s motorBench Development Suite.

Digi-Key Electronics
April, 2023
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With Electronic Power Steering (EPS), the hydraulic system is replaced with an electric motor that aids the driver only when needed. Its digital assistance control can be modified online to adapt to driving conditions. There are, however, several design constraints to consider. One is that the driver does not want to lack the haptic feedback from the tires, especially when a vehicle is large, such as a truck. Other constraints are determined by safety regulations, particularly for automatic guided vehicles. These constraints require adopting an efficient, accurate and redundant system. Gallium nitride technology helps the designers in all these areas.

Power Electronics News
March, 2023
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Since the launch of GaN-on-Si enhancement mode power transistors in March 2010 there has been a slow but monotonic shift towards adoption and replacement of silicon-based power MOSFETs. Initial adoption came from risk-taker visionaries in applications such as lidar, high-end audio amplifiers, robots, vehicle headlamps, and high-performance DC-DC converters. For the expansion of GaN for power conversion to get beyond the early adopters, a more user-friendly format than the WLCP needed to be developed. This format, however, needed to preserve the key attributes of small size, low RDS(on), high speed, excellent thermal conductivity, and low cost. In other words, the best package would be the least amount of package technically possible. Enter the PQFN…

Bodo’s Power Systems
March, 2023
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With the increase in government mandates to combat climate change, automakers are moving quickly to leverage new technology to respond by switching from the internal combustion engine to electric-drive vehicles. This article presents the design of a 2 kW, two-phase 48 V/12 V bi-directional converter using GaN FETs that achieves 96% efficiency and is targeted for the 48 V mild hybrid system.

PSD North America
March, 2023
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An exploration of a GaN-based design of a 2 kW 48V/12V bi-directional power module for 48 V mild hybrid electric vehicles.

Electronics Today
January, 2023
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