在超过四十年中，随着功率MOSFET器件的结构、技术和电路拓扑的创新，可满足不断增长的电力需求，因此改善了电源管理的效率和成本。 然而，在这新世纪的发展，随着硅功率MOSFET器件已经接近其理论极限，其改进速度已大为减慢。 与此同时，一种全新材料 - 氮化镓（GaN）- 正朝着新的理论性能领域的方向，稳步发展，其性能是老化的MOSFET器件的6,000倍，以及是目前市场的最优越GaN器件的300倍。

EETimes
2020年6月
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Over the past decade computers, displays, smart phones and other consumer electronics systems have become thinner while also becoming more powerful. As a result, the market continues to increase its demand for thinner power supply solutions with greater power density. This article examines the feasibility of adopting various non-isolated dc-dc stepdown topologies for an ultra-thin 48-V to 20-V, 250-W power solution.

How2Power
May, 2020
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Brushless DC (BLDC) motors are a popular choice and are finding increasing application in robotics, drones, electric bicycles, and electric scooters. All these applications are particularly sensitive to size, weight, cost, and efficiency. A monolithically integrated GaN power stage is demonstrated powering a 400 W capable BLDC motor with low switching losses and significant savings in size and weight.

Power Electronics Europe
May, 2020
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Beyond just performance and cost improvement, the most significant opportunity for GaN technology to impact the power conversion market comes from its intrinsic ability to integrate multiple devices on the same substrate. GaN technology, as opposed to standard silicon IC technology, allows designers to implement monolithic power systems on a single chip in a more straightforward and cost-effective way.

Bodo’s Power Systems
May, 2020
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Starting on page 13 of this story, EPC discusses with David Morrison the latest GaN developments meant for APEC. Alex Lidow, CEO and co-founder of EPC, discussed his company’s new power stage ICs, their development of GaN-based reference designs using a multi-level topology and various demos that were originally bound for APEC.

How2Power Today
April, 2020
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中压氮化镓场效应晶体管（eGaN FET）的成本在三年前已经比等效额定功率MOSFET器件的成本更低。当时，EPC公司决心利用氮化镓场效应晶体管的性能及成本效益优势，积极研发及支持48 V输入或输出的应用。车用及计算机应用的48 V 转换逐渐成为全新的架构，也成为了功率系统的全新标准。

Power Systems Design
2020年3月31日
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An integrated circuit made using GaN-on-Si substrates has been in production for over five years. The ultimate goal is to achieve a single component IC that merely requires a simple digital input from a microcontroller and produces a power output that drives a load efficiently, reliably under all conditions, in the smallest space possible, and economically. Discrete power transistors, whether silicon-based or GaN-on-Si, are entering their final chapter. Integrated GaN-on-Si can offer higher performance in a smaller footprint with significantly reduced engineering required.

IEEE Power Electronics Magazine
March 2020
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硅功率MOSFE追不上目前功率电子业界的演进步伐 -- 业界需要具备高效、高功率密度及细小的外型尺寸的器件。业界看到硅MOSFET已经达到它的理论极限，从而需要找出全新器件。氮化镓（GaN）是一种HEMT器件，具备附加增值的优势，被证明为可以支持全新应用的要求。

Power Electronics News
2020年3月25日
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A recent design for an ultra-high speed, low-impedance pulse generator to evaluate oscilloscope probe performance and for determining the feasibility of an in-socket load for ASIC emulation using EPC eGaN™ FET, EPC2037 reveals just how fast these power devices are.

Signal Integrity
March 12, 2020
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从2010年3月起，氮化镓（GaN）功率器件已经实现高可靠性并进行量产。本章详细阐析如何测试出器件在何时开始失效，从而了解数据手册给出的器件工作条件，距离其工作极限值还有多少余量。而最重要的是，找出器件固有的失效机理，了解其失效的根本原因、恒常操作情况、温度、电气应力或机械应力等，从而找出产品在一般工作条件下，它的安全使用寿命。

Power Systems Design
2020年3月
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著名企业领袖 - 宜普电源转换公司（EPC）首席执行官Alex Lidow于2009年在市场推出第一个氮化镓晶体管。 经过了10年的氮化镓产品销售，DESIGN & ELEKTRONIK 杂志编辑Ralf Higgelke与Alex会面并谈论氮化镓技术的最新发展。

DESIGN & ELEKTRONIK杂志
2020年2月20日
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当硅技术已经到了性能极限，采用氮化镓器件的全新设计使得氮化镓技术得以继续普及。氮化镓器件的发展还是刚刚起步，它的性能将得以继续提升、集成电路也将会更具优势，以及将有更多全新的氮化镓产品推出市场。

Electronics Weekly
2019年12月
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Smaller, faster, lower cost, and more integrated, GaN-on-Silicon devices have the confidence of designers across a spectrum of power conversion applications. In this article, Alex Lidow explains why it’s getting harder to avoid using GaN power transistors and ICs.

Electronic Specifier
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宜普电源转换公司首席执行官Alex Lidow 在是次硏讨会讨论氮化镓技术如何大大改善系統的效率、尺寸及成本，从而加快磁共振及AirFuel共振技术的普及。

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It’s getting harder to avoid using GaN power transistors and ICs, says Alex Lidow. There are many reasons to use GaN-on-Si power transistors such as eGaN FETs, in telecoms, vehicles, healthcare and computing. Smaller, faster, lower cost, and more integrated, GaN-on-Si devices have spent a decade gaining the confidence and trust of designers across the spectrum of power conversion applications.

Electronic Specifier
November 20, 2019
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It’s okay to start using gallium-nitride (GaN) devices in your new designs. GaN transistors have become extremely popular in recent years. These wide-bandgap devices have been replacing LDMOS transistors in many power applications. For example, GaN devices are broadly being adopted for new RF power amplifiers used in cellular base stations, radar, satellites, and other high-frequency applications. In general, their ability to endure higher voltages and operate at frequencies well into the millimeter-wave (mmWave) range have them replacing traditional RF power transistors in most amplifier configurations.

Electronic Design
November, 2019
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This article discussed an oft forgotten or little-noticed part of the spacecraft enabling travel into outer space---power management in the space vehicle. Wide bandgap semiconductors like gallium nitride (GaN), silicon carbide (SiC), as well as diamond, are looking to be the most promising materials for future electronic components since the discovery of silicon. These technologies, depending upon their design, offer huge advantages in terms of power capability (DC and microwave), radiation insensitivity, high temperature and high frequency operation, optical properties and even low noise capability. Therefore, wide bandgap components are strategically important for the development of next generation space-borne systems. eGaN devices are quickly gaining momentum in the space industry and we will see many more applications for them by NASA and commercial contractors in future programs like Artemis and other programs in countries around the globe pursuing efforts into Space.

Power Systems Design
November, 2019
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Ahead of December’s Power Conference in Munich, Bodo Arlt took the opportunity to get an insight into Alex Lidow’s thoughts on where the GaN market is now and where he sees the potential applications for the future. Dr. Lidow is the CEO and Co-founder of Efficient Power Conversion (EPC).

Bodo’s Power Systems
November, 2019
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氮化镓（GaN）及碳化硅（SiC）器件的价格下调，对客户而言，更为吸引。多家供应商推出基于氮化镓及碳化硅的功率半导体，摩拳擦掌，正在爆发新一轮的半导体大战，全速进攻传统硅基器件的市场份额。

Semiconductor Engineering
2019年10月
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氮化镓技术为业界实现以前不可能达到的目标。EPC公司的Alex Lidow阐析医疗护理如何更好地利用氮化镓技术，实现重大的改进。

Electronic Specifier
2019年8月
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