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低壓 GaN FET 可實現更小、冷却要求最小化和效率更高的解決方案
與採用傳統的矽基功率 MOSFET的應用相比,低壓 GaN FET(即 100 V)可實現更小,冷却要求最小化和效率更高的解決方案。 本文討論了氮化鎵元件如何應對動態性能需要重複和可靠的表徵的挑戰。 定制氮化鎵夾具和測試板的機械和電氣設計仔細、周全,就可以克服其中許多挑戰,使您能够在設計功率轉換器時,自信地使用這些新型寬能隙元件。
Power Electronics News
2023年7月
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Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions with two new 40 V devices rated at 62 A and 250 A to address critical spaceborne and other high-reliability applications.
EL SEGUNDO, Calif.— July 2023 — EPC announces the introduction of two new 40 V rated radiation-hardened GaN FETs.EPC7001 is a 40 V, 4 mΩ, 250 APulsed, rad-hard GaN FET in a small 7 mm2 footprint. EPC7002 is a 40 V, 14.5 mΩ, 62 APulsed, rad-hard GaN FET in a tiny 1.87 mm2 footprint. Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated breakdown. These new devices, along with the rest of the Rad Hard family, are offered in a chip-scale package. Packaged versions are available from EPC Space.
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Transient voltage overshoot is a common phenomenon in GaN high electron mobility transistors (HEMTs) under high slew rate switching conditions. The dynamic parametric instability under such stress is a critical concern for GaN applications. This work, for the first time, accurately characterized the evolution of dynamic on-resistance (RDS(on)) in GaN HEMTs under repetitive voltage overshoot up to billions of switching cycles. The dynamic RDS(on) increase was found to be the dominant device degradation under overvoltage switching. Such findings were obtained from a high-frequency, repetitive, unclamped inductive switching (UIS) test with active temperature control and accurate in-situ RDS(on) monitoring. A physics-based model was proposed to correlate the dynamic RDS(on) drift with the peak overvoltage, and a good agreement with experimental data was achieved. This model was further used to project the lifetime of GaN HEMTs. For 100 V rated GaN HEMTs switched under 100 kHz and 120 V spikes, the model projects less than 10% dynamic RDS(on) shift over 25 years of continuous operation. This work addresses the major concerns of overvoltage switching reliability of GaN HEMTs and provides new insights of the electron trapping mechanism.
IEEE Xplore
Ruizhe Zhang, Ricardo Garcia, Robert Strittmatter, Yuhao zhang, Shengke Zhange
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2023年7月3日中國商務部宣佈8月起對鎵、鍺相關物項的出口實施管制。宜普電源轉換公司的晶圓技術是矽基氮化鎵,儘管每個元件中有其微量鎵含量,相對全球鎵來源廣泛,宜普的需求相對較小。我們預計不會出現短期或長期的供應中斷。
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事實證明,15 V ~ 350 V 氮化鎵異質結場效應功率電晶體在功率轉換、馬達控制和光達等應用中,無論是在效率、尺寸、速度和成本方面都比矽元件更具優勢 。氮化鎵積體電路為許多高頻應用提供了多方面的系統級優勢。 氮化鎵積體電路才剛剛發展,其優勢肯定會隨著其技術發展而不斷增强。
Bodo’s Power Systems
2023年6月
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宜普電源轉換公司(EPC)是增强型氮化鎵 (GaN) FET 和 IC產品的領導者,在紐倫堡舉行的 PCIM Europe 2023展會上分享了關於氮化鎵技術的發展和其應用的演示。 我們與該公司的聯合創始人暨首席執行長 Alex Lidow 就電力電子行業和氮化鎵技術對行業的影響進行了深度交流。
Electronic Design
2023年5月
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In this episode of Spirit: Behind the Screen, Spirit Electronics CEO Marti McCurdy chats with EPC’s CEO Alex Lidow and Marketing Director Renee Yawger about the progress of GaN. They discuss GaN’s performance under high radiation as well as the extensive testing, failure modes and device lifespan detailed in EPC’s Phase 15 reliability report. With the full potential of GaN still to be explored and new EPC products releasing frequently, including new half-bridge drivers, low-side drivers and full power stage, GaN is especially useful in New Space and commercial space applications.
Spirit: Behind the Screen
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Case Spotlights Next-Gen Tech Replacing Silicon
(El Segundo, California)—Efficient Power Conversion Corporation (EPC), the global leader in gallium nitride (GaN) technology, today filed complaints in federal court and in the U.S. International Trade Commission (ITC) asserting four patents of its foundational patent portfolio against Innoscience (Zhuhai) Technology Company, Ltd. and its affiliates (collectively, Innoscience). These patents cover core aspects of the design and manufacturing process of EPC’s proprietary enhancement-mode gallium nitride power semiconductor devices. These patents encompass innovations that enabled GaN-based power devices to mature from a research project to a mass-producible high-volume alternative to silicon-based transistors and integrated circuits with GaN devices having higher efficiency, smaller size, and lower cost.
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Monolithic GaN integration has matured to the point that complex circuits such as a half bridge gate driver with various features can now be realized. This article will cover DC-to-DC and BLDC motor drive application examples that benefit from monolithic half-bridge integration.
Power Electronics News
May, 2023
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基於氮化鎵元件的EPC9186逆变器参考設計增强了高功率應用的電機系统性能、精度、扭矩扭矩和可實現更長的續航里程。
宜普電源轉換公司(EPC)新推EPC9186,這是一款採用EPC2302 eGaN®FET的三相BLDC馬達控制逆变器。EPC9186支持14 V~ 80 V的輸入直流電壓。大功率EPC9186支持電動滑板車、小型電動汽車、農業機械、叉車和大功率無人機等應用。
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Modern solar panels are demanding increasingly higher power density and longer operating lifetimes. Solar applications including power optimizers and panels with built-in microinverters are becoming the prevailing trend for an increasing number of solar customers, where low voltage GaN power devices (VDS < 200 V) are extensively used.
Bodo’s Power Systems
May, 2023
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Gallium nitride (GaN) transistors and ICs have the best attributes to satisfy BLDC inverter needs. The superior switching capability of GaN helps to remove dead time and increase PWM frequency to obtain unmatched sinusoidal voltage and current waveforms for smoother, silent operation with higher system efficiency
Power Systems Design
May, 2023
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宜普電源轉換公司(EPC)和Analog Devices(ADI)公司携手新推的参考設計採用經過全面优化的新型模擬控制器来驅動EPC的氮化鎵場效應電晶體,可實現超過96.5%的效率。
宜普電源轉換公司(EPC)宣佈新推EPC9158,這是一款工作在500 kHz開關頻率的雙輸出同步降壓轉換器参考设计,可將48 V~54 V的輸入電壓轉換為12 V穩壓輸出,可提供高達每相25 A電流或50 A總連續電流。ADI的新型LTC7890同步氮化鎵降壓控制器与EPC的超高效GaN FET相结合,可為高功率密度應用提供佔板面積小且非常高效的解決方案。該解決方案在48 V/12 V 、50 A連續電流下可實現 96.5%的效率。
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EPC’s GaN Experts will be available during PCIM Europe 2023, showcasing the latest generation of GaN FETs and ICs in a wide variety of real-world applications.
EL SEGUNDO, Calif. — April 2023 — — EPC, the world’s leader in enhancement-mode gallium nitride FETs and ICs,will be delivering multiple technical presentations on GaN technology and showcasing applications at PCIM Europe 2023 in Nuremburg, 09 – 11 May (see detailed schedule below). In addition, the company will demonstrate its latest eGaN® FETs and ICs in a large variety of customer end products in Hall 9, Stand 318.
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In this episode of The EEcosystem Podcast, our guest is Dr. Alex Lidow, CEO and co-founder of Efficient Power Conversion. In this episode, we will find out more about Alex and learn about MOSFETs and the rise of GaN. How did MOSFETs grow so quickly? What technologies are driving GaN adoptions and why. We will also discuss the potential obstacles to GaN adoption. This and many more questions will be answered as we go along! Listen to this episode to learn more!
April, 2023
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This article discusses the advantages of GaN-based power stages and introduces a sample device from EPC, implemented in a half-bridge topology. It explains how to use associated development kits to quickly get started on a project. In the process, designers will learn how to measure the parameters of a BLDC motor and operate it in sensorless field orientation control (FOC) with minimal programming effort using Microchip Technology’s motorBench Development Suite.
Digi-Key Electronics
April, 2023
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Efficient Power Conversion (EPC) expands its family of radiation-hardened (rad-hard) gallium nitride (GaN) products for power conversion solutions with two new devices rated at 100 V and 200 V to address a multitude of critical spaceborne and other high-reliability .
EL SEGUNDO, Calif.— April 2023 — EPC announces the introduction of two new radiation-hardened GaN FETs. The EPC7020 is a 200 V, 11 mΩ, 170 APulsed, rad-hard GaN FET in a small 12 mm2 footprint. The EPC7003 is a 100 V, 30 mΩ, 42 APulsed, rad-hard GaN FET in a tiny 1.87 mm2 footprint. Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm2 with VDS up to 100% of rated breakdown. These new devices, along with the rest of the Rad Hard family, EPC7019, EPC7014, EPC7004, EPC7018, EPC7007, are offered in a chip-scale package, the same as the commercial eGaN® FET and IC family. Packaged versions will be available from EPC Space.
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宜普電源轉換公司(EPC) 擴展了其封裝兼容的ePower™ IC系列,提高功率密度和簡化設計以滿足DC/DC應用、馬達控制器和D類音頻放大器的不同功率要求。
繼早前推出的100 V、35 A功率級IC(EPC23102)之後,EPC公司新推兩款100V功率級IC,其額定電流分別為15 A(EPC23104)和25 A(EPC23103)。
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With Electronic Power Steering (EPS), the hydraulic system is replaced with an electric motor that aids the driver only when needed. Its digital assistance control can be modified online to adapt to driving conditions. There are, however, several design constraints to consider. One is that the driver does not want to lack the haptic feedback from the tires, especially when a vehicle is large, such as a truck. Other constraints are determined by safety regulations, particularly for automatic guided vehicles. These constraints require adopting an efficient, accurate and redundant system. Gallium nitride technology helps the designers in all these areas.
Power Electronics News
March, 2023
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