Enhancement-mode gallium nitride (GaN) transistors have been commercially available for over five years. Commercially available GaN FETs are designed to be both higher performance and lower cost than state-of-the-art silicon-based power MOSFETs. This achievement marks the first time in 60 years that any technology rivals silicon both in terms of performance and cost, and signals the ultimate displacement of the venerable, but aging power MOSFET.

EDN
Alex Lidow
February 18, 2015

Bloomberg Business的Ashlee Vance 剖析宜普電源轉換公司（EPC）的發展。一直以來，矽保留了它對半導體行業發展的影響力。在過去的六十年裡，電晶體所使用的半導體材料以矽為首選。電晶體就是細小的開關，它是驅動資訊時代發展的動力。矽谷也以此材料而命名，而且許多公司藉著它打造出價值十億元的王國。現在我們把眼光移離矽元素 -- 它最終有可能處於被取替的邊緣。

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Bloomberg Business
2015年2月12日

從業界的觀點來看，只有可以爲人類提供效益及性能優勢的技術才能够生存。 主流技術CMOS就是一直爲業界提供無比的益處而得以長存。 當下的問題是CMOS技術將會變成夕陽産業嗎？新興的氮化鎵技術終於能够打破阻礙氮化鎵功率元件普及化的成本障礙。根據2015年DesignCon研討會的主講嘉賓所描述，氮化鎵技術可推動寬泛範圍的新興應用的發展，包括從無綫充電、全自動汽車以至更高效的移動通訊等應用。

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EETimes Asia
2015年2月

60年以來業界首次見證全新的半導體技術以更低的成本製造出比矽元件具備更高的性能的電晶體。氮化鎵（GaN）技術展示了它顯著提升了電晶體的性能之外，氮化鎵元件的製造成本比矽元件可以更低。由於氮化鎵電晶體具備快速開關特性，在高壓及大電流工作時它比任何前代的電晶體都更為優越，支援開發全新的應用。這些特性非常優越，可推動全新並改寫未來的應用的出現。但是氮化鎵技術的發展還是剛剛開始，它的發展前景將無可限量。

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EDN雜誌
作者：Alex Lidow
2015年1月

In this installment of the ‘How to GaN’ series we will discuss the 4th generation of eGaN FETs in 48 VIN applications and evaluate the thermal performance of the chipscale packaging of high voltage lateral eGaN FETs.

EEWeb
By: Alex Lidow
December, 2014

Technics is back. Panasonic has unveiled the first new hi-fi products from the highly-regarded brand in 6 years. The new Reference Class system is made up of three components – a stereo power amp, a network audio control player and a speaker system. The amp uses a JENO Digital Engine to eliminate jitter and nip noise in the bud, and Load Adaptive Phase Calibration (LAPC) for flat amplitude-phase frequency delivery. It features GaN for high speed switching while keeping signal loss low, a proprietary digital link input, analog XLR input, analog RCA input, bi-wiring speaker terminals, and a silent linear power supply.

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DesignCon 2015’s Thursday (January 29th) keynote speaker will be Dr. Alex Lidow, CEO and co-founder of Efficient Power Conversion Corporation (EPC). For most of his career, Alex has focused on improving the efficiency of power conversion in hopes of reducing the environmental impact of energy production and consumption. As an R&D engineer at International Rectifier, he co-invented the HEXFET power MOSFET. The patents from this invention brought in more than $900M. Alex holds numerous additional patents in power semiconductor technology, including basic patents in power MOSFETs as well as in GaN FETs. He recently co-authored the first textbook on GaN transistors, “GaN Transistors for Efficient Power Conversion”. You can catch Alex’s keynote speech at DesignCon 2015 on Thursday, January 29, 12:00 PM – 12:30 PM.

EDN
December 3, 2014
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Practical wireless power systems need to address the convenience factor of such systems. Standards such as the A4WP Class 3 have defined a broad coil impedance range that address the convenience factor and can be used as a starting point to compare the performance of the amplifiers. In this installment of WiGaN both the ZVS Class-D and Class-E amplifiers will be tested at 6.78 MHz to the A4WP Class 3 standard.

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氮化鎵（GaN）場效應電晶體隨時準備在電壓調節器及直流-直流電源應用替代矽功率元件。 與矽MOSFET元件相比，氮化鎵電晶體的開關速度快很多及具有更低的導通電阻（R_DS(on)），從而可以實現具有更高功效的功率電源，對我們來說是好的。如果你正在使用氮化鎵元件設計功率電路，你必需理解元件的開關速度。

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In this installment of the ‘How to GaN’ series we will discuss a new family of eGaN FETs that is keeping Moore’s Law alive with significant gains in key switching figures of merit that widen the performance gap with the power MOFET in high frequency power conversion.

EEWeb
By: Alex Lidow
October, 2014

根據美國市場研究公司The Information Network指出，碳化矽及氮化鎵功率半導體市場於2011年至2017年的複合年均增長率將達63%及營收預測爲5億美元。

Compound Semiconductor
2014年10月
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本章展示在10 MHz频率開關、採用氮化鎵場效應電晶體的硬開關降壓轉換器的結果及提供轉換器功耗的細數。此外，我們將展示採用氮化鎵場效應電晶體的轉換器目前所取得無可匹敵的高頻性能及如果要推動器件工作在更高頻率時所面對的限制。

EEWeb
作者：Alex Lidow
2014年8月

Long talked about, wide bandgap gallium nitride-on-silicon (GaN-on-Si) transistors are now commercially available. They are being touted for replacing silicon-based MOSFETs, which are turning out to be inefficient for many high-performance power supply designs. Recently, several suppliers of GaN-on-Si-based HEMTs and FETs have emerged in the marketplace, among them Efficient Power Conversion (EPC). To expedite the evaluation of eGAN FETs for power supply designs transitioning from silicon MOSFETs to eGaN FETs, EPC has released several development boards in the last few years.

By Ashok Bindra
Digi-Key Article Library
July 15, 2014
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高壓氮化鎵器件即將商用化，製造商終於可預期它的市場發展速度將非常迅猛

雜誌：Compound Semiconductor
2014年7月
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本章將討論我們設計的氮化鎵場效應電晶體（eGaN^®FET）模組使得電源轉換系統設計師很容易可對具超卓性能的氮化鎵電晶體進行評估

EEWeb
作者：Alex Lidow
2014年6月

氮化鎵器件於2020年的銷售額預期可達差不多6億美元幷大約需要製造58萬片6英寸晶圓。氮化鎵器件的市場將於2016年起發展迅猛，至2020年的複合年均增長率達80%，這個預期是基于EV/HEV預計從2018至2019年開始採納氮化鎵得出。於2015年至2018年，電源供電/功率因數校正將成爲主要市場幷將最後占氮化鎵器件銷售總額 50%，届時氮化鎵器件於車用市場將急起直追。

Yole Development公司
2014年6月
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業界迅速採納基於氮化鎵的功率器件，因為氮化鎵器件的工作頻率及開關速度是矽功率器件所不能實現的。

Power Electronics Europe
作者：Alex Lidow博士、Johan Strydom博士及 David Reusch博士
2014年6月

According to the latest report from Yole Développement, the GaN power industry is set for significant growth in the future.

Compound Semiconductor
June 12, 2014
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High frequency enhancement mode transistors, such as the EPC8000 series eGaN^® FETs from EPC, have been widely available since September 2013 and enable simplified designs at RF frequencies. In this installment, we present the RF characteristics of the EPC8000 series devices and show their implementation in a pulsed class A amplifier. The amplifier is pulsed to allow operation within the thermal operating limits of the device, since RF device power dissipation is typically on the same order of magnitude as the RF power delivered, unlike switching devices, such as the EPC8000 series, that operate well above 95 % efficiency. The EPC8000 series FETs, designed originally for switching power conversion applications, otherwise exhibit excellent RF characteristics and in conclusion will be compared with similar specified LDMOS.

EEWeb
By: Alex Lidow
May 29, 2014

矽半導體技術的供應鏈已經投放超過千億美元，使得它難以置信地極具效率。製造新興的高性能氮化鎵電晶體如何在這方面可與矽器件匹敵？答案很簡單，我們利用矽器件的現有供應鏈來製造氮化鎵器件，因此可大大降低氮化鎵電晶體的製造成本。

Power Systems Design
作者：Alex Lidow
2014年 5月 27日