氮化鎵（GaN）場效應電晶體隨時準備在電壓調節器及直流-直流電源應用替代矽功率元件。 與矽MOSFET元件相比，氮化鎵電晶體的開關速度快很多及具有更低的導通電阻（R_DS(on)），從而可以實現具有更高功效的功率電源，對我們來說是好的。如果你正在使用氮化鎵元件設計功率電路，你必需理解元件的開關速度。

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In this installment of the ‘How to GaN’ series we will discuss a new family of eGaN FETs that is keeping Moore’s Law alive with significant gains in key switching figures of merit that widen the performance gap with the power MOFET in high frequency power conversion.

EEWeb
By: Alex Lidow
October, 2014

根據美國市場研究公司The Information Network指出，碳化矽及氮化鎵功率半導體市場於2011年至2017年的複合年均增長率將達63%及營收預測爲5億美元。

Compound Semiconductor
2014年10月
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本章展示在10 MHz频率開關、採用氮化鎵場效應電晶體的硬開關降壓轉換器的結果及提供轉換器功耗的細數。此外，我們將展示採用氮化鎵場效應電晶體的轉換器目前所取得無可匹敵的高頻性能及如果要推動器件工作在更高頻率時所面對的限制。

EEWeb
作者：Alex Lidow
2014年8月

Long talked about, wide bandgap gallium nitride-on-silicon (GaN-on-Si) transistors are now commercially available. They are being touted for replacing silicon-based MOSFETs, which are turning out to be inefficient for many high-performance power supply designs. Recently, several suppliers of GaN-on-Si-based HEMTs and FETs have emerged in the marketplace, among them Efficient Power Conversion (EPC). To expedite the evaluation of eGAN FETs for power supply designs transitioning from silicon MOSFETs to eGaN FETs, EPC has released several development boards in the last few years.

By Ashok Bindra
Digi-Key Article Library
July 15, 2014
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高壓氮化鎵器件即將商用化，製造商終於可預期它的市場發展速度將非常迅猛

雜誌：Compound Semiconductor
2014年7月
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本章將討論我們設計的氮化鎵場效應電晶體（eGaN^®FET）模組使得電源轉換系統設計師很容易可對具超卓性能的氮化鎵電晶體進行評估

EEWeb
作者：Alex Lidow
2014年6月

氮化鎵器件於2020年的銷售額預期可達差不多6億美元幷大約需要製造58萬片6英寸晶圓。氮化鎵器件的市場將於2016年起發展迅猛，至2020年的複合年均增長率達80%，這個預期是基于EV/HEV預計從2018至2019年開始採納氮化鎵得出。於2015年至2018年，電源供電/功率因數校正將成爲主要市場幷將最後占氮化鎵器件銷售總額 50%，届時氮化鎵器件於車用市場將急起直追。

Yole Development公司
2014年6月
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業界迅速採納基於氮化鎵的功率器件，因為氮化鎵器件的工作頻率及開關速度是矽功率器件所不能實現的。

Power Electronics Europe
作者：Alex Lidow博士、Johan Strydom博士及 David Reusch博士
2014年6月

According to the latest report from Yole Développement, the GaN power industry is set for significant growth in the future.

Compound Semiconductor
June 12, 2014
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High frequency enhancement mode transistors, such as the EPC8000 series eGaN^® FETs from EPC, have been widely available since September 2013 and enable simplified designs at RF frequencies. In this installment, we present the RF characteristics of the EPC8000 series devices and show their implementation in a pulsed class A amplifier. The amplifier is pulsed to allow operation within the thermal operating limits of the device, since RF device power dissipation is typically on the same order of magnitude as the RF power delivered, unlike switching devices, such as the EPC8000 series, that operate well above 95 % efficiency. The EPC8000 series FETs, designed originally for switching power conversion applications, otherwise exhibit excellent RF characteristics and in conclusion will be compared with similar specified LDMOS.

EEWeb
By: Alex Lidow
May 29, 2014

矽半導體技術的供應鏈已經投放超過千億美元，使得它難以置信地極具效率。製造新興的高性能氮化鎵電晶體如何在這方面可與矽器件匹敵？答案很簡單，我們利用矽器件的現有供應鏈來製造氮化鎵器件，因此可大大降低氮化鎵電晶體的製造成本。

Power Systems Design
作者：Alex Lidow
2014年 5月 27日

應用於功率轉換領域的矽器件的性能已接近其理論極限。氮化鎵（GaN）及碳化矽（SiC）將取代大部分市值120億美元的矽功率MOSFET市場。目前已經有產品投產，其性能比矽器件的理論性能極限好5至10倍。

雜誌：Bodo’s Power Systems
作者：Alex Lidow
2014年5月

在過去幾年間，無線電源傳送應用逐漸流行，尤其是替可擕式裝置充電的應用。宜普公司在本章討論使用鬆散耦合線圈、高度諧振的無線電源解決方案，符合A4WP標準並適合工作在免執照、給工業、科學及醫療用電器設備（ISM）使用的6.78 MHz或13.56 MHz頻率。

雜誌：Bodo’s Power Systems
作者：Alex Lidow博士及Michael De Rooij博士
2014年5月

This column evaluated the ability to parallel eGaN^® FETs for higher output current applications by addressing the challenges facing paralleling high speed, low parasitic devices, and demonstrated an improved paralleling technique. For experimental verification of this design method, four parallel half bridges in an optimized layout were operated as a 48 V to 12 V, 480 W, 300 kHz, 40 A buck converter, and achieved efficiencies above 96.5%, from 35% to 100% load. The design method achieved superior electrical and thermal performance compared to conventional paralleling methods and demonstrated that high speed GaN devices can be effectively paralleled for higher current operation.

EEWeb
By: Alex Lidow
April, 2014

在德州Fort Worth舉行的APEC 2014年度IEEE功率電力電子研討會已經完滿結束。 該研討會的多個議題讓與會者留下深刻印象，其中一個是經歷了饒具趣味的進程的氮化鎵（GaN）功率電晶體。詳情請訪問 http://electronicdesign.com/blog/pmbus-gan-and-more-dominate-apec-2014。

Electronic Design雜誌
2014年3月

EPC公司Michael de Rooij與Power Systems Design 雜誌編輯Alix Paultre分享無線電源傳送解決方案

Power Systems Design雜誌
2014年3月
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由於德國航空太空中心的機械人及機械電子研究院（Robotics and Mechatronics Institute ）對改善感測器及功率電子的興趣很大，我們利用開發全新機械人的機會來評估宜普電源轉換公司（EPC）的全新增強型氮化鎵場效應電晶體技術並與我們目前最優秀的逆變器設計進行比較。

雜誌 ：Bodo’s Power Systems
作者：德國航空太空中心 (DLR) Robin Gruber
日期：2014年3月

The quality of sound reproduced by an audio amplifier, measured by critical performance parameters such as THD (Total Harmonic Distortion), damping factor (DF), and T-IMD (Inter-modulation Distortion), is influenced by the characteristics of the switching transistors used. Class-D audio amplifiers typically use power MOSFETs, however, lower conduction losses, faster switching speed, and zero reverse recovery losses provided by enhancement-mode GaN (eGaN) FETs enable a significant increase in the sonic quality, and higher efficiency that can eliminate heatsinks. The result is a system with better sound quality in a smaller form factor that can be built at a lower cost.

EEWeb
By: Alex Lidow
February, 2014

Enhancement-mode gallium nitride transistors have been commercially available for over four years and have infiltrated many applications previously monopolized by the aging silicon power MOSFET. There are many benefits derived from the latest generation eGaN® FETs in new emerging applications such as highly resonant wireless power transfer, RF envelope tracking, and class-D audio. This article will examine the rapidly evolving trend of conversion from power MOSFETs to gallium nitride transistors in these new applications.

Power Pulse
By: Alex Lidow
February, 2014