Monolithic GaN integration has matured to the point that complex circuits such as a half bridge gate driver with various features can now be realized. This article will cover DC-to-DC and BLDC motor drive application examples that benefit from monolithic half-bridge integration.

Power Electronics News
May, 2023
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Power-conversion technologies are experiencing the first tectonic shift since the move from bipolar to MOS. That shift, of course, is due to the viral adoption of wide-bandgap power devices. At this point, GaN is more than a specialty technology; it is a broad-scale replacement for silicon MOSFETs in applications ranging from 30 V up to 650 V — a multibillion-dollar market.

Power Electronics News
December, 2022
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GaN FETs in thermally enhanced QFN packages offer higher performance and smaller solution size for high power density applications, including DC-DC conversion, AC/DC chargers, solar optimizers and microinverters, motor drives, and Class D Audio

Power Electronics News
September, 2022
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氮化鎵場效應電晶體和積體電路的用戶現在有了一個工具來確定應用中需要的降額和降額設計中應考慮的因素。宜普公司開發了一個基于第一原理的物理模型，以解釋氮化鎵電晶體在硬開關時，導通電阻如何上升。本文提供了兩個同步整流應用實例的演示。

Electronic Specifier
2022年5月
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Today, the permanent magnet motor, also known as DC brushless motor (BLDC), is widely used and offers higher torque capability per cubic inch and higher dynamics when compared to other motors. So far, silicon-based power devices have been dominant in the inverter electronics, but today their performance is nearing their theoretical limits. There is an increasing need for higher power density. Gallium nitride (GaN) transistors and ICs have the best attributes to satisfy these needs.

Power Systems Design
November, 2021
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As the outer reaches of the Earth’s atmosphere and space are opened to commercial development, motors will become increasingly important to systems places there for various functions. With the inevitability of manufacturing in space, motors – including their drivers – will take on even more functions. Of equal importance will be the motor drivers selected to drive those motors efficiently and reliably.

Components in Electronics
October, 2021
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A recent design for an ultra-high speed, low-impedance pulse generator to evaluate oscilloscope probe performance and for determining the feasibility of an in-socket load for ASIC emulation using EPC eGaN™ FET, EPC2037 reveals just how fast these power devices are.

Signal Integrity
March 12, 2020
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知名企業領袖 - 宜普電源轉換公司（EPC）首席執行官Alex Lidow於2009年在市場推出第一個氮化鎵電晶體。 經過了10年的氮化鎵產品銷售，DESIGN & ELEKTRONIK 雜誌編輯Ralf Higgelke與Alex會面並談論氮化鎵技術的最新發展。

DESIGN & ELEKTRONIK雜誌
2020年2月20日
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It’s okay to start using gallium-nitride (GaN) devices in your new designs. GaN transistors have become extremely popular in recent years. These wide-bandgap devices have been replacing LDMOS transistors in many power applications. For example, GaN devices are broadly being adopted for new RF power amplifiers used in cellular base stations, radar, satellites, and other high-frequency applications. In general, their ability to endure higher voltages and operate at frequencies well into the millimeter-wave (mmWave) range have them replacing traditional RF power transistors in most amplifier configurations.

Electronic Design
November, 2019
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This article discussed an oft forgotten or little-noticed part of the spacecraft enabling travel into outer space---power management in the space vehicle. Wide bandgap semiconductors like gallium nitride (GaN), silicon carbide (SiC), as well as diamond, are looking to be the most promising materials for future electronic components since the discovery of silicon. These technologies, depending upon their design, offer huge advantages in terms of power capability (DC and microwave), radiation insensitivity, high temperature and high frequency operation, optical properties and even low noise capability. Therefore, wide bandgap components are strategically important for the development of next generation space-borne systems. eGaN devices are quickly gaining momentum in the space industry and we will see many more applications for them by NASA and commercial contractors in future programs like Artemis and other programs in countries around the globe pursuing efforts into Space.

Power Systems Design
November, 2019
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Ahead of December’s Power Conference in Munich, Bodo Arlt took the opportunity to get an insight into Alex Lidow’s thoughts on where the GaN market is now and where he sees the potential applications for the future. Dr. Lidow is the CEO and Co-founder of Efficient Power Conversion (EPC).

Bodo’s Power Systems
November, 2019
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根據預測，到2025年，我們的數據將會超過175 zettabyte。當發明了 5G並將最早於2020年在日本舉行的奧運採用、以及通過人工智慧（AI）及機器學習（ML）的發展，建立數據中心和其部署、以及提升目前較舊的數據中心的效能，將進入突飛猛進的時代。

我深信氮化鎵（GaN）功率電晶體是數據中心功率架構的最理想元件，因為需要小型化、高效及快速開關的元件。氮化鎵元件在具48 VIN的所有拓撲，都可以實現最高的效率。

EDN
2019年6月
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目前的氮化鎵場效應電晶體在尺寸及性能方面以飛快的速度發展，而目前為業界樹立基準的氮化鎵元件的性能還可以提升多300倍。

最早採用氮化鎵元件的應用是利用氮化鎵的超快速開關速度，例如面向全自動駕駛車輛和無人機的雷射雷達系統、機械人，以及4G/LTE基站。氮化鎵元件的產量一直在增加，而其價格跟開關速度更慢、尺寸更大型和日益陳舊的MOSFET元件相約。因此，目前正是氮化鎵元件正面攻擊MOSET的時候！。

Bodo’s Power Systems
2019年6月
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宜普電源轉換公司（EPC）推出兩個全新100 V氮化鎵元件，可以支援伺服器及汽車應用的48 V轉換的要求。 我將在處理器、車用及能量存儲系統等方面探討48 V伺服器的功率轉換解決方案（可參考我的文章 “雙向DC/DC電源供電: 我們應該如何取向？”），未來將在EDN文章中看到。氮化鎵功率電晶體必需是這些不同架構的一部份 -- 我相信沒有其他更優越的元件可以替代氮化鎵元件了 。

Planet Analog
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從2010年開始，自矽基氮化鎵（GaN）電晶體商用化後，低壓氮化鎵電晶體推動了很多全新應用的發展。氮化鎵元件具備超快速開關，推動全新市場諸如雷射雷達、波峰追蹤及無線電源市場的出現。這些全新應用進一步實現更強大的供應鏈、低製造成本及元件前所未有的高可靠性。這些優勢使得比較保守的設計工程師在DC/DC轉換器、AC/DC轉換器及車載等各種應用開始對氮化鎵元件進行評估。在本文章系列，我們將討論多種發揮氮化鎵元件優勢的應用，實現最終產品差異化的競爭優勢。首先，我們會探討是甚麼因素加快了氮化鎵元件的普及。

Power Systems Design
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EPC CEO & Co-Founder, Alex Lidow gives Lee Teschler from EE World Online a tour of the EPC booth at APEC 2018 where EPC demonstrations included a high-power density 48 V – 12 V non-isolated converter capable of delivering over 700 W. In addition, a range of 3-D real-time LiDAR imaging sensors used in autonomous vehicles were displayed. Also, a single desktop implementing a high power resonant wireless charging solution capable of generating 300 W to wirelessly power a wide range of devices including cell phones, notebook computers, monitors, wireless speakers, smart watches, and table lamps.

View videos below.

Two space travel related stories hit my desktop this week; one that rapidly generated major international headlines and one that slid very quietly onto my email screen.

The headline-hitter was the successful launch of Elon Musk’s SpaceX rocket with its payload of a Tesla sports car, complete with a dummy driver at the wheel. The second was about Gallium Nitride technology that would be suitable for space applications.

Electro Pages
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基於氮化鎵材料的場效應電晶體正在顛覆功率轉換市場和替代矽基MOSFET。 與MOSFET相比，更快速的氮化鎵場效應電晶體（GaN FET）可以在最細小的體積內實現更高的開關速度。 氮化鎵元件的承諾是可以大大縮減電源供應器的體積及重量。為了實現最高的潛在性能， 這些具備高性能的氮化鎵電晶體需要最優化的閘極驅動器。

Peregrine Semiconductor
2016年7月12日
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在2014年，美國的數據中心用上了1000億千瓦小時（KWh）能量。雪上加霜的是，這個快速增長的所需能量，大部份是由基於超過一世紀前設立的基建、非常低效的供電網路支持。浪費了的能量有多嚴重？供電網路為一個數字晶片提供150 W功率，而實際上，它可能只需要100 W。 此外，由於在電源轉換過程中，每一瓦功耗會轉化為熱量，因此實際上所浪費的能量更大。而我們必需利用昂貴及耗電的空調機來為伺服器群散熱。空調機大約需要1 W來除去1 W的功耗，這相等於已經低的能源轉換效率將再降低一倍。

全新半導體材料的出現可提高能源轉換效率，其成本也可以更低。在伺服器群中的功率結構的最後階段解決低效率的問題，可以實現每年節省70億千瓦小時的能量。如果一併計算空調機的能源成本，總成本倍增並佔了美國的所有伺服器的總能耗的14%。所能夠節省的成本也是非常巨大的。以每一千瓦小時的平均成本0.12美元來計算，每年可以節省的總成本高達17億美元，這還沒有包括由於採用更少數量的功率轉換器及空調機而得以額外節省的系統成本。

Datacenter Dynamics
2015年12月15日
作者：Alex Lidow
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