汽車電子在過去30年内經歷了幾個時代的演變。 從主要採用機械或發動機驅動系統的純內燃機 (ICE)，到添加電力動力的輕度混合動力 (MHEV)，再到全電池電動汽車 (BEV)應用。 在這三個時代中，用於轉換和分配電力的架構甚至基本半導體元件都發生了重大的變化。 本文討論了這個進化過程和對將來進化的方向做出了一些推測。

Power Systems Design
2023年8月
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宜普電源轉換公司(EPC)是增强型氮化鎵 (GaN) FET 和 IC產品的領導者，在紐倫堡舉行的 PCIM Europe 2023展會上分享了關於氮化鎵技術的發展和其應用的演示。 我們與該公司的聯合創始人暨首席執行長 Alex Lidow 就電力電子行業和氮化鎵技術對行業的影響進行了深度交流。

Electronic Design
2023年5月
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With Electronic Power Steering (EPS), the hydraulic system is replaced with an electric motor that aids the driver only when needed. Its digital assistance control can be modified online to adapt to driving conditions. There are, however, several design constraints to consider. One is that the driver does not want to lack the haptic feedback from the tires, especially when a vehicle is large, such as a truck. Other constraints are determined by safety regulations, particularly for automatic guided vehicles. These constraints require adopting an efficient, accurate and redundant system. Gallium nitride technology helps the designers in all these areas.

Power Electronics News
March, 2023
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With the increase in government mandates to combat climate change, automakers are moving quickly to leverage new technology to respond by switching from the internal combustion engine to electric-drive vehicles. This article presents the design of a 2 kW, two-phase 48 V/12 V bi-directional converter using GaN FETs that achieves 96% efficiency and is targeted for the 48 V mild hybrid system.

PSD North America
March, 2023
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An exploration of a GaN-based design of a 2 kW 48V/12V bi-directional power module for 48 V mild hybrid electric vehicles.

Electronics Today
January, 2023
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Power-conversion technologies are experiencing the first tectonic shift since the move from bipolar to MOS. That shift, of course, is due to the viral adoption of wide-bandgap power devices. At this point, GaN is more than a specialty technology; it is a broad-scale replacement for silicon MOSFETs in applications ranging from 30 V up to 650 V — a multibillion-dollar market.

Power Electronics News
December, 2022
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From Nov. 15 to 18, electronica 2022 will bring the international electronics industry together at the Munich exhibition grounds. Wide Bandgap Semiconductors, Renewable Energies, Smart Grid, and Energy Storage will be the major topics covered by the Power Electronics Forum at electronica 2022. In this podcast, onsemi president and CEO Hassane El-Khoury, Silanna Semiconductor North America CEO Mark Drucker, and of Efficient Power Conversion (EPC) CEO Alex Lidow will introduce the Power Electronics Forum. Interview with Alex Lidow starts at 31:55

EETimes
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Easy Engineering媒體採訪了宜普電源轉換公司（EPC）的市場行銷總監Renee Yawger，瞭解目前氮化鎵元件應用的情況和氮化鎵技術的未來。

Easy Engineering
2022年5月
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Automotive 48 V/12 V converters are essential in modern hybrid electric vehicles, as the energy is exchanged between the 48 V and 12 V buses. This two-voltage system accommodates legacy 12 V systems and provides higher power for 48V to loads such as vacuum and water pumps, electric super chargers, steering, and audio systems. Among all the requirements for the 48 V/12 V converter, efficiency, power density, size and cost are on the top of the list. This article addresses these design criteria by employing the GaN ePower™ Stage, EPC23101, and compares it with a previous design using discrete EPC2206 devices.

Bodo’s Power Systems
March, 2022
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This article presents the design and performance of an automotive buck/reverse-boost converter with GaN for efficient 48 V power distribution.

Electronics Today
December/January Edition
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Demonstrating the design of a bi-directional DC-DC converter for automotive 48 V power distribution, showing how GaN technology is a powerful enabler for efficient electrification. The trend towards increasing electrification in the automotive industry enables car makers both to deliver new innovations to market cost-effectively and to meet increasingly stringent emissions legislation. Raising the vehicle’s main bus voltage to 48 V helps meet the demands of power-hungry systems such as the start-stop motor/generator of a mild hybrid vehicle, as well as loads such as electric power steering, electric supercharging, and vacuum and water pumps.

Bodo’s Power Systems
December, 2021
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The year 2021 was a transitional year in which the world decided to open its doors to GaN. In this interview with Power Electronics News during CES week, GaN industry experts confirmed that GaN is now proving its superiority over silicon.

Power Electronics News
January, 2022
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隨著採用氮化鎵（GaN）元件的應用越來越多，Bodo Arlt 借此機會與 EPC公司的首席執行長兼共同創辦人 Alex Lidow 談及他認爲這種不斷發展的技術的下一個重點市場。

Bodo’s Power Systems
2021 年 9 月
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根據將氮化鎵和碳化矽材料的電子從價帶轉移到導帶所需的能量，氮化鎵和碳化矽元件被指定爲寬帶隙 (WBG) 半導體——碳化矽元件約爲 3.2 eV，氮化鎵元件則約爲 3.4 eV，而矽元件只有1.1 eV 。WBG 的擊穿電壓更高，在某些應用中可以達到 1,700 V。 在今年 5 月舉行的綫上PCIM Europe展會上，幾家公司展示了他們在 氮化鎵和碳化矽技術方面的最新創新，並且就 WBG 技術的發展方向分享了其獨特見解。

EE Times – Europe
2021 年 7 月
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In last month’s Safety & Compliance column in How2Power, “WBG Semiconductors Pose Safety And EMI Challenges In Motor Drive Applications,”[1]Kevin Parmenter made some assertions about the difficulties of using SiC, and to a lesser extent GaN, power semiconductors in large motor-drive applications. This commentary is a response to that article, showing that GaN can be a game changer in low-voltage integrated motors.

How2Power
February, 2021
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Gallium nitride (GaN) devices offer performance in a small form factor, increasing the efficiency, and reducing the system cost for 48 V power conversion applications. They have been adopted in high volumes in high density computing, as well as many new automotive power system designs.

Electronic Specifier
February, 2021
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An automotive application using GaN power devices in high volume is lidar(light detection and ranging) for autonomous vehicles. Lidar technology provides information about a vehicle’s surroundings, thus requiring high accuracy and reliability to ensure safety and performance. This article will discus a novel testing mechanism developed by EPC to test eGaN devices beyond the qualification requirements of the Automotive Electronics Council (AEC) for the specific use case of lidar.

Power Systems Design
December, 2020
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氮化鎵（GaN）技術已實現重大改進，而且它極具成本效益，可以替代MOSFET元件。 從2017年開始，採用氮化鎵元件的48 V DC/D轉換器開始成為市場上重要的應用。 各種拓撲諸如多相和多級降壓轉換器，實現具備更高效率的全新解決方案，可以滿足IT和汽車市場的能源需求。

Power Electronics News
2020年11月
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Gallium nitride FETs have continued to gain traction in many power electronic applications, but GaN technology is still in the early part of its life cycle. While there is much room to improve basic FET performance figures of merit an even more promising avenue is the development of GaN power ICs.

Bodo’s Power Systems
November, 2020
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矽功率MOSFET未能跟上電力電子行業的發展變化，而效率、功率密度和更小的外型尺寸等因素是行業的主要需求。 矽MOSFET元件的性能已達到其理論極限，並且由於電路板的空間非常寶貴，因此功率系統設計人員必需找出替代方案。 氮化鎵（GaN）元件是一種高電子遷移率電晶體（HEMT），這種半導體正為新興應用不斷增值。

EETimes
2020年8月
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