EPC技術文章

氮化鎵技術在功率轉換領域普及進程的里程碑

影響氮化鎵技術在各種電源管理應用中的快速滲透普及有哪些因素?在本文中,我們將深入探討在過去 13 年中我司訪問過、已投入批量生産的客戶的反饋。

Power Electronics News
2023 年 10 月
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Growing GaN Ecosystem for BLDC Motor Drives

Gallium nitride (GaN) transistors and ICs have the best attributes to satisfy BLDC inverter needs. The superior switching capability of GaN helps to remove dead time and increase PWM frequency to obtain unmatched sinusoidal voltage and current waveforms for smoother, silent operation with higher system efficiency

Power Systems Design
May, 2023
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GaN’s Evolution from Science Project to Mainstream Power Conductor

Power-conversion technologies are experiencing the first tectonic shift since the move from bipolar to MOS. That shift, of course, is due to the viral adoption of wide-bandgap power devices. At this point, GaN is more than a specialty technology; it is a broad-scale replacement for silicon MOSFETs in applications ranging from 30 V up to 650 V — a multibillion-dollar market.

Power Electronics News
December, 2022
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企業采訪 - 宜普電源轉換公司

Easy Engineering媒體採訪了宜普電源轉換公司(EPC)的市場行銷總監Renee Yawger,瞭解目前氮化鎵元件應用的情況和氮化鎵技術的未來。

Easy Engineering
2022年5月
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功率系統採用GaN的5大誤區

我們將在本文討論客戶爲何遲遲未採用氮化鎵技術的一些最常見原因,氮化鎵技術顯然是較舊的矽基功率MOSFET的替代技術。在不深入詳細研究統計數據的情况下,按最常發生推導出一系列原因,並理解某些應用比其他應用更側重氮化鎵技術的某些特性。我們的討論僅限於額定電壓低於400 V的元件,因爲這是EPC公司的氮化鎵場效應電晶體和積體電路的重點應用。

PSD功率系統設計
2022 年3月
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CES 2022: GaN Technology for the Next Future

The year 2021 was a transitional year in which the world decided to open its doors to GaN. In this interview with Power Electronics News during CES week, GaN industry experts confirmed that GaN is now proving its superiority over silicon.

Power Electronics News
January, 2022
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How GaN Integrated Circuits Are Redefining Power Conversion

Gallium nitride (GaN) power devices have been in production for over 10 years and, beyond just performance and cost improvements, the most significant opportunity for GaN technology to impact the power conversion market comes from the intrinsic ability to integrate multiple devices on the same substrate. This capability will allow monolithic power systems to be designed on a single chip in a more straightforward, higher efficiency, and more cost-effective way.

Power Electronic News
March, 2021
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氮化鎵元件緩解了矽元件的問題

就像生活要面對現實一樣,老年人離開舞臺而讓位給年輕人,矽元件也是需要向現實低頭。 隨著氮化鎵元件的問世和普及,正逐步淘汰舊有可靠的矽元件。 在過去的四十年中,隨著功率MOSFET元件的結構、技術和電路拓撲的創新與不斷增長的電力需求同步發展,電源管理的效率和成本一直以來得以穩步改善。 但是,在業界發展的新時代,隨著矽功率MOSFET元件接近其理論極限,其演進速度下降了很多。 同時,新材料氮化鎵的理論性能極限穩步發展,其性能極限比老化的MOSFET元件高出6,000倍,並且比目前市場上最好的氮化鎵產品高出300倍。

EEWeb
2020年7 月16日
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矽片已死……離散功率元件快將消失

在超過四十年中,隨著功率MOSFET元件的結構、技術和電路拓撲的創新,可滿足不斷增長的電力需求,因此改善了電源管理的效率和成本。 然而,在這新世紀的發展,隨著矽功率MOSFET元件已經接近其理論極限,其改進速度已大為減慢。 與此同時,一種全新材料 - 氮化鎵(GaN)- 正朝著新的理論性能領域的方向,穩步發展,其性能是老化的MOSFET元件的6,000倍,以及是目前市場的最優越GaN元件的300倍。

EETimes
2020年6月
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氮化鎵與48 V應用 – 目前的發展及何去何從?

中壓氮化鎵場效應電晶體(eGaN FET)的成本在三年前已經比等效額定功率MOSFET器件的成本更低。當時,EPC公司決心利用氮化鎵場效應電晶體的性能及成本效益優勢,積極研發及支持48 V輸入或輸出的應用。車用及電腦應用的48 V 轉換逐漸成為全新的架構,也成為了功率系統的全新標準。

Power Systems Design
2020年3月31日
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無線電源線上硏討會:為什麼氮化鎵元件在符合AirFuel標準的共振式無線電源應用中,可以提升效率、縮小尺寸及降低成本?

宜普電源轉換公司首席執行長Alex Lidow 在是次硏討會討論氮化鎵技術如何大大改善系統的效率、尺寸及成本,從而加快磁共振及AirFuel共振技術的普及。

觀看線上硏討會

GaN in Space

This article discussed an oft forgotten or little-noticed part of the spacecraft enabling travel into outer space---power management in the space vehicle. Wide bandgap semiconductors like gallium nitride (GaN), silicon carbide (SiC), as well as diamond, are looking to be the most promising materials for future electronic components since the discovery of silicon. These technologies, depending upon their design, offer huge advantages in terms of power capability (DC and microwave), radiation insensitivity, high temperature and high frequency operation, optical properties and even low noise capability. Therefore, wide bandgap components are strategically important for the development of next generation space-borne systems. eGaN devices are quickly gaining momentum in the space industry and we will see many more applications for them by NASA and commercial contractors in future programs like Artemis and other programs in countries around the globe pursuing efforts into Space.

Power Systems Design
November, 2019
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功率半導體戰爭開始了

氮化鎵(GaN)及碳化矽(SiC)元件的價格下調,對客戶而言,更為吸引。多家供應商推出基於氮化鎵及碳化矽的功率半導體,摩拳擦掌,正在爆發新一輪的半導體大戰,全速進攻傳統矽基元件的市場份額。

Semiconductor Engineering
2019年10月
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The Amazing New World of Gallium Nitride

From the heart of Silicon Valley comes a new buzzword. Gallium nitride is the future of power technology. Tech blogs are touting gallium nitride as the silicon of the future, and you are savvy enough to get in on the ground floor. Knowing how important gallium nitride is makes you a smarter, better consumer. You are at the forefront of your peer group because you know of an up and coming technology, and this one goes by the name of gallium nitride.

HACKADAY
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PCIM Europe – where power is at the core of innovation

This year’s PCIM Europe was attended by a record number of visitors, over 12,000. Over half (54%) were from outside Germany. They came to see over 500 exhibitors and while the subject matter was diverse and wide-ranging, there were some themes that emerged. GaN and SiC jostled for attention at this year’s PCIM Europe. Showing the potential that GaN has already realised, Efficient Power Conversion (EPC) had a stand that was well-stocked with examples of the eGaN FET technology that the company introduced in 2009.

Electronic Specifier
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The Power and Evolution of GaN, Part 6: GaN Technology Adoption and Roadmap

In the final installment of this series, how GaN has met the requirements to displace silicon is explored. As the adoption rate of GaN explodes, it is important to remember that, while GaN has made many advancements in just a few short years, it is still far from its theoretical performance limitations and thus there are profound improvements that can continue to be achieved. In time, the performance and cost advantages of GaN-on-silicon will result in a majority of applications currently using silicon-based devices converting to the smaller, faster, cheaper, and more reliable GaN technology.

Power Systems Design
February, 2019
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GaN 的功率和演變- 第5部分:採用eGaN FET和積體電路構建低成本、高效的12 V - 1 V 負載點轉換器

氮化鎵元件對提升主流應用的效率的貢獻很大,例如在傳統矽基12 V - 1 V負載點 DC/DC轉換器。基於eGaN積體電路的12 V轉到1 V、12 A負載轉換器在5 MHz的頻率下,可以實現78%峰值效率及1000 W/in3 功率密度,而成本則低於每瓦0.2美元。

Power Systems Design
2019年1月
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氮化鎵的強大推動力及演進 - 第四章:eGaN FET和積體電路為手術用的機械人帶來精准的控制

本章討論由於低壓矽基氮化鎵(GaN)元件具備超快速的開關速度,因此實現了很多全新應用的出現。這些應用推動了行業的改革,例如面向全自動駕駛車輛的雷射雷達(lidar)、面向5G通信應用的波峰追蹤,以及家用和用於辦公室的大面積無線電源技術。此外,我們會探討氮化鎵功率元件如何為手術用的機械人帶來精准的控制,從而推動了醫療行業的最新發展。

Power Systems Design
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The Power and Evolution of GaN, Part 3: How to Build an Ultra-Fast High-Power Laser Driver using eGaN FETs - That Sees Farther, Better, and at a Lower Cost!

In the first article in this series, how gallium nitride (GaN)-on-silicon low voltage power devices have enabled many new applications, such as light detection and ranging (LiDAR), envelope tracking, and wireless power was discussed. In this article, more detail on one of these leading applications, LiDAR, will be explored. How GaN is being used to make LiDAR systems that see farther, with higher resolution, and at lower cost will be shown.

Power Systems Design
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Gallium nitride is the silicon of the future

Last week, Anker debuted a tiny new power brick, crediting its small size with the component it uses instead of silicon: gallium nitride (GaN). It’s the latest example of the growing popularity of this transparent, glass-like material that could one day unseat silicon and cut energy use worldwide.

The Verge
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